Diodes Incorporated ZVN3320ASTOB
- Part Number:
- ZVN3320ASTOB
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2488814-ZVN3320ASTOB
- Description:
- MOSFET N-CH 200V 0.1A TO92-3
- Datasheet:
- ZVN3320ASTOB
Diodes Incorporated ZVN3320ASTOB technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN3320ASTOB.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- HTS Code8541.29.00.95
- Voltage - Rated DC200V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PSIP-W3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation-Max625mW Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation330mW
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs25 Ω @ 100mA, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds45pF @ 25V
- Current - Continuous Drain (Id) @ 25°C100mA Ta
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)100mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.1A
- Drain to Source Breakdown Voltage200V
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
ZVN3320ASTOB Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 45pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.0.1A is the drain current of this device, which is the maximum continuous current transistor can carry.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
ZVN3320ASTOB Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 200V voltage
ZVN3320ASTOB Applications
There are a lot of Diodes Incorporated
ZVN3320ASTOB applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 45pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.0.1A is the drain current of this device, which is the maximum continuous current transistor can carry.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
ZVN3320ASTOB Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 200V voltage
ZVN3320ASTOB Applications
There are a lot of Diodes Incorporated
ZVN3320ASTOB applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
ZVN3320ASTOB More Descriptions
MOSFET N-CH 200V 0.1A TO92-3
MOSFET N-CH 200V 100MA E-LINE
MOSFETs N-Chnl 200V
MOSFET N-CH 200V 100MA E-LINE
MOSFETs N-Chnl 200V
The three parts on the right have similar specifications to ZVN3320ASTOB.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialPackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageRoHS StatusLead FreeFactory Lead TimeNumber of PinsWeightOperating TemperaturePublishedPbfree CodeResistanceNumber of ChannelsElement ConfigurationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeHeightLengthWidthRadiation HardeningREACH SVHCMax Power DissipationDrain to Source Voltage (Vdss)Polarity/Channel TypeInput CapacitanceFET TechnologyDrain to Source ResistanceRds On MaxContact PlatingSubcategoryThreshold VoltagePulsed Drain Current-Max (IDM)Feedback Cap-Max (Crss)View Compare
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ZVN3320ASTOBThrough HoleThrough HoleE-Line-3SILICONTape & Reel (TR)e3Obsolete1 (Unlimited)3EAR99MATTE TIN8541.29.00.95200VMOSFET (Metal Oxide)SINGLEWIRE260unknown100mA403R-PSIP-W3Not Qualified1SINGLE625mW TaENHANCEMENT MODE330mWN-ChannelSWITCHING25 Ω @ 100mA, 10V3V @ 1mA45pF @ 25V100mA Ta10V±20V100mA20V0.1A200VRoHS CompliantLead Free-------------------------------
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Through HoleThrough HoleE-Line-3SILICONTape & Reel (TR)e3Active1 (Unlimited)3EAR99Matte Tin (Sn)-60VMOSFET (Metal Oxide)-WIRE260-270mA403--1-625mW TaENHANCEMENT MODE625mWN-ChannelSWITCHING5 Ω @ 500mA, 10V2.4V @ 1mA35pF @ 18V270mA Ta10V±20V270mA20V0.27A60VROHS3 CompliantLead Free17 Weeks3453.59237mg-55°C~150°C TJ2012yes5Ohm1Single5 ns7ns7 ns6 ns4.01mm4.77mm2.41mmNoNo SVHC------------
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Through Hole-TO-226-3SILICONTape & Reel (TR)e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)-200V-SINGLEWIRE260-100mA403--1SINGLE-ENHANCEMENT MODE330mW-SWITCHING------100mA20V-200VROHS3 CompliantLead Free-31.437803g-2009--1--------No-625mW200VN-CHANNEL45pFMETAL-OXIDE SEMICONDUCTOR25Ohm25 Ω-----
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Surface MountSurface MountTO-236-3, SC-59, SOT-23-3SILICONTape & Reel (TR)e3Active1 (Unlimited)3EAR99--200VMOSFET (Metal Oxide)DUALGULL WING260-60mA40---1-330mW TaENHANCEMENT MODE330mWN-Channel-25 Ω @ 100mA, 10V3V @ 1mA45pF @ 25V60mA Ta10V±20V60mA20V0.06A200VROHS3 CompliantLead Free17 Weeks37.994566mg-55°C~150°C TJ2001yes25Ohm1Single5 ns7ns7 ns6 ns1.02mm3.04mm1.4mmNoNo SVHC-------TinFET General Purpose Power1V1A5 pF
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