Diodes Incorporated ZVN3320FTA
- Part Number:
- ZVN3320FTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478243-ZVN3320FTA
- Description:
- MOSFET N-CH 200V 60MA SOT23-3
- Datasheet:
- ZVN3320FTA
Diodes Incorporated ZVN3320FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN3320FTA.
- Factory Lead Time17 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance25Ohm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC200V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating60mA
- Time@Peak Reflow Temperature-Max (s)40
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max330mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation330mW
- Turn On Delay Time5 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs25 Ω @ 100mA, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds45pF @ 25V
- Current - Continuous Drain (Id) @ 25°C60mA Ta
- Rise Time7ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)7 ns
- Turn-Off Delay Time6 ns
- Continuous Drain Current (ID)60mA
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.06A
- Drain to Source Breakdown Voltage200V
- Pulsed Drain Current-Max (IDM)1A
- Feedback Cap-Max (Crss)5 pF
- Height1.02mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZVN3320FTA Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 45pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60mA amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.A device can conduct a maximum continuous current of [0.06A] according to its drain current.It is [6 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1A.A turn-on delay time of 5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
ZVN3320FTA Features
a continuous drain current (ID) of 60mA
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 6 ns
based on its rated peak drain current 1A.
a threshold voltage of 1V
ZVN3320FTA Applications
There are a lot of Diodes Incorporated
ZVN3320FTA applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 45pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60mA amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.A device can conduct a maximum continuous current of [0.06A] according to its drain current.It is [6 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1A.A turn-on delay time of 5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
ZVN3320FTA Features
a continuous drain current (ID) of 60mA
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 6 ns
based on its rated peak drain current 1A.
a threshold voltage of 1V
ZVN3320FTA Applications
There are a lot of Diodes Incorporated
ZVN3320FTA applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
ZVN3320FTA More Descriptions
MOSFET N-CH 200V 60MA SOT23-3 / Trans MOSFET N-CH 200V 0.06A 3-Pin SOT-23 T/R
Mosfet Bvdss: 101V~250V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. ZVN3320FTA
ZVN3320F Series 100 V 25 Ohm N-Channel Enhancement Mode MOSFET- SOT-23
MOSFET N-Channel 200V 0.06A SOT23 | Diodes Inc ZVN3320FTA
MOSFET, N CH, 200V, 0.06A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:60mA; Source Voltage Vds:200V; On Resistance
MOSFET, N CH, 200V, 0.06A, SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 60mA; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 25ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 330mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
Mosfet Bvdss: 101V~250V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. ZVN3320FTA
ZVN3320F Series 100 V 25 Ohm N-Channel Enhancement Mode MOSFET- SOT-23
MOSFET N-Channel 200V 0.06A SOT23 | Diodes Inc ZVN3320FTA
MOSFET, N CH, 200V, 0.06A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:60mA; Source Voltage Vds:200V; On Resistance
MOSFET, N CH, 200V, 0.06A, SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 60mA; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 25ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 330mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
The three parts on the right have similar specifications to ZVN3320FTA.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Number of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Feedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishHTS CodeReach Compliance CodePin CountJESD-30 CodeQualification StatusConfigurationTransistor ApplicationDrain-source On Resistance-MaxMax Power DissipationOperating Temperature (Max)Drain to Source Voltage (Vdss)Polarity/Channel TypeInput CapacitanceFET TechnologyDrain to Source ResistanceRds On MaxView Compare
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ZVN3320FTA17 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2001e3yesActive1 (Unlimited)3EAR9925OhmFET General Purpose Power200VMOSFET (Metal Oxide)DUALGULL WING26060mA4011330mW TaSingleENHANCEMENT MODE330mW5 nsN-Channel25 Ω @ 100mA, 10V3V @ 1mA45pF @ 25V60mA Ta7ns10V±20V7 ns6 ns60mA1V20V0.06A200V1A5 pF1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free------------------
-
--Through HoleThrough HoleE-Line-3--SILICON-Tape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99--200VMOSFET (Metal Oxide)SINGLEWIRE260100mA401-625mW Ta-ENHANCEMENT MODE330mW-N-Channel25 Ω @ 100mA, 10V3V @ 1mA45pF @ 25V100mA Ta-10V±20V--100mA-20V0.1A200V-------RoHS CompliantLead FreeMATTE TIN8541.29.00.95unknown3R-PSIP-W3Not QualifiedSINGLESWITCHING---------
-
--Through HoleThrough HoleE-Line-3-453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)3EAR99--60VMOSFET (Metal Oxide)-WIRE260270mA4011625mW TaSingleENHANCEMENT MODE625mW5 nsN-Channel5 Ω @ 500mA, 10V2.4V @ 1mA35pF @ 18V270mA Ta7ns10V±20V7 ns6 ns270mA-20V0.27A60V--4.01mm4.77mm2.41mm--RoHS CompliantLead FreeMATTE TIN-unknown3R-PSIP-W3Not Qualified-SWITCHING5Ohm--------
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--Through Hole-SOT-23--SILICON-Bulk2006e3yesObsolete1 (Unlimited)3EAR99-FET General Purpose Power200V-SINGLEWIRE260100mA401---ENHANCEMENT MODE330mW-----------100mA-20V0.1A200V-------ROHS3 CompliantLead FreeMatte Tin (Sn)8541.29.00.95-3R-PSIP-W3Not QualifiedSINGLESWITCHING-625mW200°C200VN-CHANNEL45pFMETAL-OXIDE SEMICONDUCTOR25Ohm25 Ω
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