ZVN3320FTA

Diodes Incorporated ZVN3320FTA

Part Number:
ZVN3320FTA
Manufacturer:
Diodes Incorporated
Ventron No:
2478243-ZVN3320FTA
Description:
MOSFET N-CH 200V 60MA SOT23-3
ECAD Model:
Datasheet:
ZVN3320FTA

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Specifications
Diodes Incorporated ZVN3320FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN3320FTA.
  • Factory Lead Time
    17 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    25Ohm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    200V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    60mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    330mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    330mW
  • Turn On Delay Time
    5 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    25 Ω @ 100mA, 10V
  • Vgs(th) (Max) @ Id
    3V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    45pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    60mA Ta
  • Rise Time
    7ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    7 ns
  • Turn-Off Delay Time
    6 ns
  • Continuous Drain Current (ID)
    60mA
  • Threshold Voltage
    1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.06A
  • Drain to Source Breakdown Voltage
    200V
  • Pulsed Drain Current-Max (IDM)
    1A
  • Feedback Cap-Max (Crss)
    5 pF
  • Height
    1.02mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZVN3320FTA Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 45pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60mA amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.A device can conduct a maximum continuous current of [0.06A] according to its drain current.It is [6 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1A.A turn-on delay time of 5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

ZVN3320FTA Features
a continuous drain current (ID) of 60mA
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 6 ns
based on its rated peak drain current 1A.
a threshold voltage of 1V


ZVN3320FTA Applications
There are a lot of Diodes Incorporated
ZVN3320FTA applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
ZVN3320FTA More Descriptions
MOSFET N-CH 200V 60MA SOT23-3 / Trans MOSFET N-CH 200V 0.06A 3-Pin SOT-23 T/R
Mosfet Bvdss: 101V~250V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. ZVN3320FTA
ZVN3320F Series 100 V 25 Ohm N-Channel Enhancement Mode MOSFET- SOT-23
MOSFET N-Channel 200V 0.06A SOT23 | Diodes Inc ZVN3320FTA
MOSFET, N CH, 200V, 0.06A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:60mA; Source Voltage Vds:200V; On Resistance
MOSFET, N CH, 200V, 0.06A, SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 60mA; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 25ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 330mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
Product Comparison
The three parts on the right have similar specifications to ZVN3320FTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    HTS Code
    Reach Compliance Code
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Transistor Application
    Drain-source On Resistance-Max
    Max Power Dissipation
    Operating Temperature (Max)
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    Input Capacitance
    FET Technology
    Drain to Source Resistance
    Rds On Max
    View Compare
  • ZVN3320FTA
    ZVN3320FTA
    17 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2001
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    25Ohm
    FET General Purpose Power
    200V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    60mA
    40
    1
    1
    330mW Ta
    Single
    ENHANCEMENT MODE
    330mW
    5 ns
    N-Channel
    25 Ω @ 100mA, 10V
    3V @ 1mA
    45pF @ 25V
    60mA Ta
    7ns
    10V
    ±20V
    7 ns
    6 ns
    60mA
    1V
    20V
    0.06A
    200V
    1A
    5 pF
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVN3320ASTOB
    -
    -
    Through Hole
    Through Hole
    E-Line-3
    -
    -
    SILICON
    -
    Tape & Reel (TR)
    -
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    -
    200V
    MOSFET (Metal Oxide)
    SINGLE
    WIRE
    260
    100mA
    40
    1
    -
    625mW Ta
    -
    ENHANCEMENT MODE
    330mW
    -
    N-Channel
    25 Ω @ 100mA, 10V
    3V @ 1mA
    45pF @ 25V
    100mA Ta
    -
    10V
    ±20V
    -
    -
    100mA
    -
    20V
    0.1A
    200V
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    MATTE TIN
    8541.29.00.95
    unknown
    3
    R-PSIP-W3
    Not Qualified
    SINGLE
    SWITCHING
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVN3306ASTOB
    -
    -
    Through Hole
    Through Hole
    E-Line-3
    -
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    -
    60V
    MOSFET (Metal Oxide)
    -
    WIRE
    260
    270mA
    40
    1
    1
    625mW Ta
    Single
    ENHANCEMENT MODE
    625mW
    5 ns
    N-Channel
    5 Ω @ 500mA, 10V
    2.4V @ 1mA
    35pF @ 18V
    270mA Ta
    7ns
    10V
    ±20V
    7 ns
    6 ns
    270mA
    -
    20V
    0.27A
    60V
    -
    -
    4.01mm
    4.77mm
    2.41mm
    -
    -
    RoHS Compliant
    Lead Free
    MATTE TIN
    -
    unknown
    3
    R-PSIP-W3
    Not Qualified
    -
    SWITCHING
    5Ohm
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVN3320A
    -
    -
    Through Hole
    -
    SOT-23
    -
    -
    SILICON
    -
    Bulk
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    FET General Purpose Power
    200V
    -
    SINGLE
    WIRE
    260
    100mA
    40
    1
    -
    -
    -
    ENHANCEMENT MODE
    330mW
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    100mA
    -
    20V
    0.1A
    200V
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    Matte Tin (Sn)
    8541.29.00.95
    -
    3
    R-PSIP-W3
    Not Qualified
    SINGLE
    SWITCHING
    -
    625mW
    200°C
    200V
    N-CHANNEL
    45pF
    METAL-OXIDE SEMICONDUCTOR
    25Ohm
    25 Ω
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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