STMicroelectronics STGFW40V60DF

Name: STGFW40V60DF
Brand: STMicroelectronics
SKU: 3587182-STGFW40V60DF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGFW40V60DF

Manufacturer:: STMicroelectronics

Ventron No:: 3587182-STGFW40V60DF

Description:: IGBT 600V 80A 62.5W TO-3PF

ECAD Model:

Datasheet:: STGFW40V60DF

Specifications

STMicroelectronics STGFW40V60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGFW40V60DF.

Factory Lead Time
32 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3PFM, SC-93-3
Number of Pins
3
Weight
6.961991g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
62.5W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGFW40
Element Configuration
Single
Input Type
Standard
Power - Max
62.5W
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
80A
Reverse Recovery Time
41 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Test Condition
400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 40A
IGBT Type
Trench Field Stop
Gate Charge
226nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
52ns/208ns
Switching Energy
456μJ (on), 411μJ (off)
RoHS Status
ROHS3 Compliant

Description

STGFW40V60DF Description
STGFW40V60DF is a member of the V series of IGBTs utilizing an advanced proprietary trench gate and field stop structure. Its ability to deliver low conduction and switching losses makes this device able to maximize the efficiency of any frequency converter. Safer paralleling operation can be ensured based on a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution.

STGFW40V60DF Features
Low conduction and switching losses Low thermal resistance Very tight parameter distribution Tail-less switching off High-speed switching series

STGFW40V60DF Applications
Welding Power factor correction UPS Solar inverters Chargers

STGFW40V60DF More Descriptions

Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
Trans IGBT Chip N-CH 600V 80A 62500mW 3-Pin(3 Tab) TO-3PF Tube
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
Short-circuit rugged IGBT, TO-3PF, TubeSTMicroelectronics SCT
Igbt |Stmicroelectronics STGFW40V60DF

Product Comparison

The three parts on the right have similar specifications to STGFW40V60DF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Max Power Dissipation

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Element Configuration

Input Type

Power - Max

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Test Condition

Vce(on) (Max) @ Vge, Ic

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

RoHS Status

Lifecycle Status

Power Dissipation

Turn On Delay Time

Turn-Off Delay Time

Max Junction Temperature (Tj)

Continuous Collector Current

Height

Transistor Element Material

Series

Number of Terminations

Subcategory

Pin Count

Number of Elements

Case Connection

Transistor Application

Polarity/Channel Type

JEDEC-95 Code

Turn On Time

Turn Off Time-Nom (toff)

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Radiation Hardening

View Compare
STGFW40V60DF

STMicroelectronics

32 Weeks

Tin

Through Hole

Through Hole

TO-3PFM, SC-93-3

3

6.961991g

-55°C~175°C TJ

Tube

Active

1 (Unlimited)

EAR99

62.5W

NOT SPECIFIED

NOT SPECIFIED

STGFW40

Single

Standard

62.5W

600V

80A

41 ns

600V

1.8V

400V, 40A, 10 Ω, 15V

2.3V @ 15V, 40A

Trench Field Stop

226nC

160A

52ns/208ns

456μJ (on), 411μJ (off)

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGF5H60DF

STMicroelectronics

20 Weeks

-

Through Hole

Through Hole

TO-220-3 Full Pack

-

-

-55°C~175°C TJ

Tube

Active

1 (Unlimited)

EAR99

24W

NOT SPECIFIED

NOT SPECIFIED

STGF5

-

Standard

-

600V

10A

134.5 ns

600V

1.5V

400V, 5A, 47 Ω, 15V

1.95V @ 15V, 5A

Trench Field Stop

43nC

20A

30ns/140ns

56μJ (on), 78.5μJ (off)

ROHS3 Compliant

ACTIVE (Last Updated: 8 months ago)

24W

30 ns

140 ns

175°C

10A

20mm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STGFW40V60DF vs STGF5H60DF
STGFW80V60F

STMicroelectronics

32 Weeks

-

Through Hole

Through Hole

TO-3P-3 Full Pack

3

6.961991g

-55°C~175°C TJ

Tube

Active

1 (Unlimited)

EAR99

79W

NOT SPECIFIED

NOT SPECIFIED

STGFW80

Single

Standard

79W

600V

120A

-

600V

1.85V

400V, 80A, 10 Ω, 15V

2.3V @ 15V, 80A

Trench Field Stop

448nC

240A

60ns/220ns

1.8mJ (on), 1mJ (off)

ROHS3 Compliant

ACTIVE (Last Updated: 8 months ago)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STGFW40V60DF vs STGFW80V60F
STGF8NC60KD

STMicroelectronics

8 Weeks

-

Through Hole

Through Hole

TO-220-3 Full Pack

3

-

-55°C~150°C TJ

Tube

Active

1 (Unlimited)

EAR99

24W

-

-

STGF8

Single

Standard

24W

600V

7A

23.5 ns

600V

-

390V, 3A, 10 Ω, 15V

2.75V @ 15V, 3A

-

19nC

30A

17ns/72ns

55μJ (on), 85μJ (off)

ROHS3 Compliant

ACTIVE (Last Updated: 8 months ago)

-

-

-

-

-

-

SILICON

PowerMESH™

3

Insulated Gate BIP Transistors

3

1

ISOLATED

POWER CONTROL

N-CHANNEL

TO-220AB

23 ns

242 ns

20V

6.5V

No

STGFW40V60DF vs STGF8NC60KD