STGF30NC60S

STMicroelectronics STGF30NC60S

Part Number:
STGF30NC60S
Manufacturer:
STMicroelectronics
Ventron No:
3554916-STGF30NC60S
Description:
IGBT 600V 22A 40W TO220FP
ECAD Model:
Datasheet:
STGF30NC60S

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Specifications
STMicroelectronics STGF30NC60S technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGF30NC60S.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    PowerMESH™
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    40W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STGF30
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    40W
  • Case Connection
    ISOLATED
  • Input Type
    Standard
  • Turn On Delay Time
    21.5 ns
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    260 ns
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    22A
  • JEDEC-95 Code
    TO-220AB
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.5V
  • Turn On Time
    30 ns
  • Test Condition
    480V, 20A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.9V @ 15V, 20A
  • Turn Off Time-Nom (toff)
    555 ns
  • Gate Charge
    96nC
  • Current - Collector Pulsed (Icm)
    150A
  • Td (on/off) @ 25°C
    21.5ns/180ns
  • Switching Energy
    300μJ (on), 1.28mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.75V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STGF30NC60S Description
STGF30NC60S is a 600v fast IGBT. The transistor STGF30NC60S utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor STGF30NC60S is in the  TO-220FP package with 40 power dissipation. 

STGF30NC60S Features
Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) High current capability Continuous collector current at TC = 25 °C: 22A Turn-off latching current: 150A

STGF30NC60S Applications
Motor drive Automotive  Advanced driver assistance systems (ADAS)  Industrial  Pro audio, video & signage  Enterprise systems  Enterprise machine
STGF30NC60S More Descriptions
STGF30NC60S 600 V 22 A 40 W Flange Mount Fast IGBT - TO-220FP
Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Trans IGBT Chip N-CH 600V 22A 3-Pin(3 Tab) TO-220FP Tube
Product Comparison
The three parts on the right have similar specifications to STGF30NC60S.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Lead Free
    Lifecycle Status
    Factory Lead Time
    Weight
    ECCN Code
    Power - Max
    IGBT Type
    JESD-609 Code
    Terminal Finish
    Rise Time
    Continuous Collector Current
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Reverse Recovery Time
    View Compare
  • STGF30NC60S
    STGF30NC60S
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    yes
    Obsolete
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    40W
    NOT SPECIFIED
    NOT SPECIFIED
    STGF30
    3
    Not Qualified
    1
    Single
    40W
    ISOLATED
    Standard
    21.5 ns
    POWER CONTROL
    N-CHANNEL
    260 ns
    600V
    22A
    TO-220AB
    600V
    1.5V
    30 ns
    480V, 20A, 10 Ω, 15V
    1.9V @ 15V, 20A
    555 ns
    96nC
    150A
    21.5ns/180ns
    300μJ (on), 1.28mJ (off)
    20V
    5.75V
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGFW80V60F
    Through Hole
    Through Hole
    TO-3P-3 Full Pack
    3
    -
    -55°C~175°C TJ
    Tube
    -
    -
    Active
    1 (Unlimited)
    -
    -
    79W
    NOT SPECIFIED
    NOT SPECIFIED
    STGFW80
    -
    -
    -
    Single
    -
    -
    Standard
    -
    -
    -
    -
    600V
    120A
    -
    600V
    1.85V
    -
    400V, 80A, 10 Ω, 15V
    2.3V @ 15V, 80A
    -
    448nC
    240A
    60ns/220ns
    1.8mJ (on), 1mJ (off)
    -
    -
    ROHS3 Compliant
    -
    ACTIVE (Last Updated: 8 months ago)
    32 Weeks
    6.961991g
    EAR99
    79W
    Trench Field Stop
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGF7NB60SL
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    -
    Active
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    25W
    -
    -
    STGF7
    3
    -
    1
    Single
    25W
    ISOLATED
    Standard
    1.1 μs
    POWER CONTROL
    N-CHANNEL
    -
    600V
    15A
    -
    600V
    1.2V
    1350 ns
    480V, 7A, 1k Ω, 5V
    1.6V @ 4.5V, 7A
    8100 ns
    16nC
    20A
    1.1μs/5.2μs
    4.1mJ (off)
    20V
    2.4V
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    2.299997g
    EAR99
    -
    -
    e3
    Matte Tin (Sn) - annealed
    250ns
    15A
    9.3mm
    10.4mm
    4.6mm
    No SVHC
    No
    -
  • STGF8NC60KD
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    -
    Active
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    24W
    -
    -
    STGF8
    3
    -
    1
    Single
    -
    ISOLATED
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    -
    600V
    7A
    TO-220AB
    600V
    -
    23 ns
    390V, 3A, 10 Ω, 15V
    2.75V @ 15V, 3A
    242 ns
    19nC
    30A
    17ns/72ns
    55μJ (on), 85μJ (off)
    20V
    6.5V
    ROHS3 Compliant
    -
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    -
    EAR99
    24W
    -
    -
    -
    -
    -
    -
    -
    -
    -
    No
    23.5 ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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