STMicroelectronics STGF8NC60KD

Name: STGF8NC60KD
Brand: STMicroelectronics
SKU: 2854859-STGF8NC60KD
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGF8NC60KD

Manufacturer:: STMicroelectronics

Ventron No:: 2854859-STGF8NC60KD

Description:: IGBT 600V 7A 24W TO220FP

ECAD Model:

Datasheet:: STGF8NC60KD

Specifications

STMicroelectronics STGF8NC60KD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGF8NC60KD.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
24W
Base Part Number
STGF8
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
ISOLATED
Input Type
Standard
Power - Max
24W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
7A
Reverse Recovery Time
23.5 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Turn On Time
23 ns
Test Condition
390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.75V @ 15V, 3A
Turn Off Time-Nom (toff)
242 ns
Gate Charge
19nC
Current - Collector Pulsed (Icm)
30A
Td (on/off) @ 25°C
17ns/72ns
Switching Energy
55μJ (on), 85μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

STGF8NC60KD Description
The STGF8NC60KD is a 600 V - 8 A - short circuit rugged IGBT utilizing the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behaviour.

STGF8NC60KD Features
Lower on voltage drop (VCE(sat)) Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra-fast recovery antiparallel diode Short circuit withstand time 10 μs

STGF8NC60KD Applications
High-frequency motor controls
SMPS and PFC in both hard switch and resonant topologies
Motor drivers

STGF8NC60KD More Descriptions

Trans IGBT Chip N-CH 600V 7A 3-Pin(3 Tab) TO-220FP Tube
Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-220AB
SRAM Chip Async Single 2.5V/3.3V 8M-bit 512K x 16 10ns 44-Pin TSOP-II
Power MOSFET Transistors N Ch 500V 0.40 11A Pwr MOSFET
New short circuit rugged "K" series

Product Comparison

The three parts on the right have similar specifications to STGF8NC60KD.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Max Power Dissipation

Base Part Number

Pin Count

Number of Elements

Element Configuration

Case Connection

Input Type

Power - Max

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Radiation Hardening

RoHS Status

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Power Dissipation

Turn On Delay Time

Turn-Off Delay Time

Collector Emitter Saturation Voltage

Max Junction Temperature (Tj)

Continuous Collector Current

IGBT Type

Height

Weight

JESD-609 Code

Terminal Finish

Rise Time

Length

Width

REACH SVHC

Lead Free

View Compare
STGF8NC60KD

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

8 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~150°C TJ

Tube

PowerMESH™

Active

1 (Unlimited)

3

EAR99

Insulated Gate BIP Transistors

24W

STGF8

3

1

Single

ISOLATED

Standard

24W

POWER CONTROL

N-CHANNEL

600V

7A

23.5 ns

TO-220AB

600V

23 ns

390V, 3A, 10 Ω, 15V

2.75V @ 15V, 3A

242 ns

19nC

30A

17ns/72ns

55μJ (on), 85μJ (off)

20V

6.5V

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGF5H60DF

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

20 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

-

-

-55°C~175°C TJ

Tube

-

Active

1 (Unlimited)

-

EAR99

-

24W

STGF5

-

-

-

-

Standard

-

-

-

600V

10A

134.5 ns

-

600V

-

400V, 5A, 47 Ω, 15V

1.95V @ 15V, 5A

-

43nC

20A

30ns/140ns

56μJ (on), 78.5μJ (off)

-

-

-

ROHS3 Compliant

NOT SPECIFIED

NOT SPECIFIED

24W

30 ns

140 ns

1.5V

175°C

10A

Trench Field Stop

20mm

-

-

-

-

-

-

-

-

STGF8NC60KD vs STGF5H60DF
STGF7NB60SL

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

8 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~150°C TJ

Tube

PowerMESH™

Active

1 (Unlimited)

3

EAR99

Insulated Gate BIP Transistors

25W

STGF7

3

1

Single

ISOLATED

Standard

-

POWER CONTROL

N-CHANNEL

600V

15A

-

-

600V

1350 ns

480V, 7A, 1k Ω, 5V

1.6V @ 4.5V, 7A

8100 ns

16nC

20A

1.1μs/5.2μs

4.1mJ (off)

20V

2.4V

No

ROHS3 Compliant

-

-

25W

1.1 μs

-

1.2V

-

15A

-

9.3mm

2.299997g

e3

Matte Tin (Sn) - annealed

250ns

10.4mm

4.6mm

No SVHC

Lead Free

STGF8NC60KD vs STGF7NB60SL
STGFW20V60F

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

32 Weeks

Through Hole

Through Hole

TO-3P-3 Full Pack

3

SILICON

-55°C~175°C TJ

Tube

-

Active

1 (Unlimited)

3

EAR99

-

52W

STGFW20

2

1

Single

ISOLATED

Standard

-

POWER CONTROL

N-CHANNEL

600V

40A

-

-

600V

49 ns

400V, 20A, 15V

2.2V @ 15V, 20A

173 ns

116nC

80A

38ns/149ns

200μJ (on), 130μJ (off)

-

-

No

ROHS3 Compliant

-

-

52W

-

-

2.3V

-

-

Trench Field Stop

23.2mm

-

e3

Matte Tin (Sn)

-

15.7mm

5.7mm

-

-

STGF8NC60KD vs STGFW20V60F