STMicroelectronics STGF15M65DF2
- Part Number:
- STGF15M65DF2
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3587271-STGF15M65DF2
- Description:
- TRENCH GATE FIELD-STOP IGBT M SE
- Datasheet:
- STGF15M65DF2
STMicroelectronics STGF15M65DF2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGF15M65DF2.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time30 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Max Power Dissipation31W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTGF15
- Input TypeStandard
- Power - Max31W
- Collector Emitter Voltage (VCEO)2V
- Max Collector Current30A
- Reverse Recovery Time142 ns
- Collector Emitter Breakdown Voltage650V
- Test Condition400V, 15A, 12 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2V @ 15V, 15A
- IGBT TypeTrench Field Stop
- Gate Charge45nC
- Current - Collector Pulsed (Icm)60A
- Td (on/off) @ 25°C24ns/93ns
- Switching Energy90μJ (on), 450μJ (off)
- RoHS StatusROHS3 Compliant
STGF15M65DF2 Description
STGF15M65DF2, part of the M series IGBTs, is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It is able to provide high efficiency for applications requiring low-loss and short-circuit functionality. Due to its positive VCE(sat) temperature coefficient and tight parameter distribution, a safer paralleling operation can be achieved.
STGF15M65DF2 Features
Available in the D2Pak package Tight parameter distribution Safer paralleling Low thermal resistance Positive VCE(sat) temperature coefficient
STGF15M65DF2 Applications
Motor control UPS PFC General purpose inverter
STGF15M65DF2, part of the M series IGBTs, is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It is able to provide high efficiency for applications requiring low-loss and short-circuit functionality. Due to its positive VCE(sat) temperature coefficient and tight parameter distribution, a safer paralleling operation can be achieved.
STGF15M65DF2 Features
Available in the D2Pak package Tight parameter distribution Safer paralleling Low thermal resistance Positive VCE(sat) temperature coefficient
STGF15M65DF2 Applications
Motor control UPS PFC General purpose inverter
STGF15M65DF2 More Descriptions
STGF15Mxx Series 650 V 15 A Flange Mount Trench Gate Field-Stop IGBT - TO-220FP
Trench gate field-stop IGBT M series, 650 V 15 A low loss
Trans IGBT Chip N-CH 650V 30A 31000mW 3-Pin(3 Tab) TO-220FP Tube
Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB
Trench gate field-stop IGBT M series, 650 V 15 A low loss
Trans IGBT Chip N-CH 650V 30A 31000mW 3-Pin(3 Tab) TO-220FP Tube
Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB
The three parts on the right have similar specifications to STGF15M65DF2.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)ECCN CodeMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberInput TypePower - MaxCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusNumber of PinsTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsTerminal FinishSubcategoryVoltage - Rated DCCurrent RatingPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeDrain to Source Voltage (Vdss)Polarity/Channel TypeTurn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeCollector Emitter Saturation VoltageTurn On TimeTurn Off Time-Nom (toff)Gate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxHeightLengthWidthREACH SVHCRadiation HardeningLead FreeWeightView Compare
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STGF15M65DF2ACTIVE (Last Updated: 8 months ago)30 WeeksThrough HoleThrough HoleTO-220-3 Full Pack-55°C~175°C TJTubeActive1 (Unlimited)EAR9931WNOT SPECIFIEDNOT SPECIFIEDSTGF15Standard31W2V30A142 ns650V400V, 15A, 12 Ω, 15V2V @ 15V, 15ATrench Field Stop45nC60A24ns/93ns90μJ (on), 450μJ (off)ROHS3 Compliant-----------------------------------
-
ACTIVE (Last Updated: 7 months ago)20 WeeksThrough HoleThrough HoleTO-220-3 Full Pack-55°C~175°C TJTubeActive1 (Unlimited)EAR9924WNOT SPECIFIEDNOT SPECIFIEDSTGF7Standard24W1.95V14A136 ns600V400V, 7A, 47 Ω, 15V1.95V @ 15V, 7ATrench Field Stop46nC28A30ns/160ns99μJ (on), 100μJ (off)ROHS3 Compliant----------------------------------
-
ACTIVE (Last Updated: 7 months ago)8 WeeksThrough HoleThrough HoleTO-220-3 Full Pack-55°C~150°C TJTubeActive1 (Unlimited)EAR9932W--STGF19Standard-600V16A31 ns600V390V, 12A, 10 Ω, 15V2.5V @ 15V, 12A-53nC60A25ns/97ns85μJ (on), 189μJ (off)ROHS3 Compliant3SILICONPowerMESH™e33Matte Tin (Sn)Insulated Gate BIP Transistors600V9A31Single35WISOLATED25 nsPOWER CONTROL7ns600VN-CHANNEL97 ns16ATO-220AB1.8V32 ns272 ns20V5.75V16.4mm10.4mm4.6mmNo SVHCNoLead Free-
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ACTIVE (Last Updated: 8 months ago)32 WeeksThrough HoleThrough HoleTO-3P-3 Full Pack-55°C~175°C TJTubeActive1 (Unlimited)EAR9979WNOT SPECIFIEDNOT SPECIFIEDSTGFW80Standard79W600V120A-600V400V, 80A, 10 Ω, 15V2.3V @ 15V, 80ATrench Field Stop448nC240A60ns/220ns1.8mJ (on), 1mJ (off)ROHS3 Compliant3----------Single----------1.85V----------6.961991g
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