STGF5H60DF

STMicroelectronics STGF5H60DF

Part Number:
STGF5H60DF
Manufacturer:
STMicroelectronics
Ventron No:
3554839-STGF5H60DF
Description:
TRENCH GATE FIELD-STOP IGBT, H S
ECAD Model:
Datasheet:
STGF5H60DF

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Specifications
STMicroelectronics STGF5H60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGF5H60DF.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Max Power Dissipation
    24W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STGF5
  • Power Dissipation
    24W
  • Input Type
    Standard
  • Turn On Delay Time
    30 ns
  • Turn-Off Delay Time
    140 ns
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    10A
  • Reverse Recovery Time
    134.5 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.5V
  • Test Condition
    400V, 5A, 47 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.95V @ 15V, 5A
  • Max Junction Temperature (Tj)
    175°C
  • Continuous Collector Current
    10A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    43nC
  • Current - Collector Pulsed (Icm)
    20A
  • Td (on/off) @ 25°C
    30ns/140ns
  • Switching Energy
    56μJ (on), 78.5μJ (off)
  • Height
    20mm
  • RoHS Status
    ROHS3 Compliant
Description
STGF5H60DF Description
STGF5H60DF, a part of the new H series of IGBTs, is a type of  IGBT with an ultrafast soft recovery antiparallel diode. It is developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It ensures extremely low conduction and switching losses to maximize the efficiency of very high switching frequency converters. A safer paralleling operation can be provided based on a positive VCE(sat) temperature coefficient and very tight parameter distribution. 

STGF5H60DF Features
Advanced proprietary trench gate field-stop structure PositiveVCE(sat) temperature coefficient  Very tight parameter distribution Low thermal resistance Ultrafast soft recovery antiparallel diode

STGF5H60DF Applications
Motor control UPS PFC
STGF5H60DF More Descriptions
Trans IGBT Chip N-CH 600V 10A 24000mW 3-Pin(3 Tab) TO-220FP Tube
H Series 600 V 10 A Flange Mount Trench Gate Field-Stop IGBT - TO-220FP
Trench gate field-stop IGBT, H series 600 V, 5 A high speed
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, SINGLE, 600V, 10A, TO-220FP; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 24W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: H Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
Product Comparison
The three parts on the right have similar specifications to STGF5H60DF.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Power Dissipation
    Input Type
    Turn On Delay Time
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Max Junction Temperature (Tj)
    Continuous Collector Current
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Height
    RoHS Status
    Number of Pins
    Transistor Element Material
    Series
    Pbfree Code
    Number of Terminations
    Subcategory
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Case Connection
    Transistor Application
    Polarity/Channel Type
    JEDEC-95 Code
    Turn On Time
    Turn Off Time-Nom (toff)
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Lead Free
    Power - Max
    JESD-609 Code
    Terminal Finish
    Voltage - Rated DC
    Current Rating
    Rise Time
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (ID)
    Length
    Width
    REACH SVHC
    Radiation Hardening
    View Compare
  • STGF5H60DF
    STGF5H60DF
    ACTIVE (Last Updated: 8 months ago)
    20 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    24W
    NOT SPECIFIED
    NOT SPECIFIED
    STGF5
    24W
    Standard
    30 ns
    140 ns
    600V
    10A
    134.5 ns
    600V
    1.5V
    400V, 5A, 47 Ω, 15V
    1.95V @ 15V, 5A
    175°C
    10A
    Trench Field Stop
    43nC
    20A
    30ns/140ns
    56μJ (on), 78.5μJ (off)
    20mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGF30NC60S
    -
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    -55°C~150°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    -
    40W
    NOT SPECIFIED
    NOT SPECIFIED
    STGF30
    40W
    Standard
    21.5 ns
    260 ns
    600V
    22A
    -
    600V
    1.5V
    480V, 20A, 10 Ω, 15V
    1.9V @ 15V, 20A
    -
    -
    -
    96nC
    150A
    21.5ns/180ns
    300μJ (on), 1.28mJ (off)
    -
    ROHS3 Compliant
    3
    SILICON
    PowerMESH™
    yes
    3
    Insulated Gate BIP Transistors
    3
    Not Qualified
    1
    Single
    ISOLATED
    POWER CONTROL
    N-CHANNEL
    TO-220AB
    30 ns
    555 ns
    20V
    5.75V
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGF7H60DF
    ACTIVE (Last Updated: 7 months ago)
    20 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    24W
    NOT SPECIFIED
    NOT SPECIFIED
    STGF7
    -
    Standard
    -
    -
    1.95V
    14A
    136 ns
    600V
    -
    400V, 7A, 47 Ω, 15V
    1.95V @ 15V, 7A
    -
    -
    Trench Field Stop
    46nC
    28A
    30ns/160ns
    99μJ (on), 100μJ (off)
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    24W
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGF19NC60HD
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    -55°C~150°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    32W
    -
    -
    STGF19
    35W
    Standard
    25 ns
    97 ns
    600V
    16A
    31 ns
    600V
    1.8V
    390V, 12A, 10 Ω, 15V
    2.5V @ 15V, 12A
    -
    -
    -
    53nC
    60A
    25ns/97ns
    85μJ (on), 189μJ (off)
    16.4mm
    ROHS3 Compliant
    3
    SILICON
    PowerMESH™
    -
    3
    Insulated Gate BIP Transistors
    3
    -
    1
    Single
    ISOLATED
    POWER CONTROL
    N-CHANNEL
    TO-220AB
    32 ns
    272 ns
    20V
    5.75V
    Lead Free
    -
    e3
    Matte Tin (Sn)
    600V
    9A
    7ns
    600V
    16A
    10.4mm
    4.6mm
    No SVHC
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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