STMicroelectronics STGF7H60DF

Name: STGF7H60DF
Brand: STMicroelectronics
SKU: 3072011-STGF7H60DF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGF7H60DF

Manufacturer:: STMicroelectronics

Ventron No:: 3072011-STGF7H60DF

Description:: IGBT 600V 14A 24W TO-220FP

ECAD Model:

Datasheet:: STGF7H60DF

Specifications

STMicroelectronics STGF7H60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGF7H60DF.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
20 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
24W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGF7
Input Type
Standard
Power - Max
24W
Collector Emitter Voltage (VCEO)
1.95V
Max Collector Current
14A
Reverse Recovery Time
136 ns
Collector Emitter Breakdown Voltage
600V
Test Condition
400V, 7A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.95V @ 15V, 7A
IGBT Type
Trench Field Stop
Gate Charge
46nC
Current - Collector Pulsed (Icm)
28A
Td (on/off) @ 25°C
30ns/160ns
Switching Energy
99μJ (on), 100μJ (off)
RoHS Status
ROHS3 Compliant

Description

STGF7H60DF   Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling   operation.

STGF7H60DF   Features ? High speed switching ? Tight parameters distribution ? Safe paralleling ? Low thermal resistance ? Short-circuit rated ? Ultrafast soft recovery antiparallel diode
STGF7H60DF   Applications ? Motor control ? UPS, PFC

STGF7H60DF More Descriptions

Trench gate field-stop IGBT, H series 600 V, 7 A high speed
Trans IGBT Chip N-CH 600V 14A 24000mW 3-Pin(3 Tab) TO-220FP Tube
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STGF7H60DF.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Max Power Dissipation

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Input Type

Power - Max

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Test Condition

Vce(on) (Max) @ Vge, Ic

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

RoHS Status

Power Dissipation

Turn On Delay Time

Turn-Off Delay Time

Collector Emitter Saturation Voltage

Max Junction Temperature (Tj)

Continuous Collector Current

Height

Number of Pins

Weight

Element Configuration

Transistor Element Material

Series

JESD-609 Code

Number of Terminations

Terminal Finish

Subcategory

Pin Count

Number of Elements

Case Connection

Transistor Application

Rise Time

Polarity/Channel Type

Turn On Time

Turn Off Time-Nom (toff)

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

View Compare
STGF7H60DF

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

20 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

-55°C~175°C TJ

Tube

Active

1 (Unlimited)

EAR99

24W

NOT SPECIFIED

NOT SPECIFIED

STGF7

Standard

24W

1.95V

14A

136 ns

600V

400V, 7A, 47 Ω, 15V

1.95V @ 15V, 7A

Trench Field Stop

46nC

28A

30ns/160ns

99μJ (on), 100μJ (off)

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGF5H60DF

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

20 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

-55°C~175°C TJ

Tube

Active

1 (Unlimited)

EAR99

24W

NOT SPECIFIED

NOT SPECIFIED

STGF5

Standard

-

600V

10A

134.5 ns

600V

400V, 5A, 47 Ω, 15V

1.95V @ 15V, 5A

Trench Field Stop

43nC

20A

30ns/140ns

56μJ (on), 78.5μJ (off)

ROHS3 Compliant

24W

30 ns

140 ns

1.5V

175°C

10A

20mm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STGF7H60DF vs STGF5H60DF
STGFW80V60F

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

32 Weeks

Through Hole

Through Hole

TO-3P-3 Full Pack

-55°C~175°C TJ

Tube

Active

1 (Unlimited)

EAR99

79W

NOT SPECIFIED

NOT SPECIFIED

STGFW80

Standard

79W

600V

120A

-

600V

400V, 80A, 10 Ω, 15V

2.3V @ 15V, 80A

Trench Field Stop

448nC

240A

60ns/220ns

1.8mJ (on), 1mJ (off)

ROHS3 Compliant

-

-

-

1.85V

-

-

-

3

6.961991g

Single

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STGF7H60DF vs STGFW80V60F
STGF7NB60SL

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

8 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

-55°C~150°C TJ

Tube

Active

1 (Unlimited)

EAR99

25W

-

-

STGF7

Standard

-

600V

15A

-

600V

480V, 7A, 1k Ω, 5V

1.6V @ 4.5V, 7A

-

16nC

20A

1.1μs/5.2μs

4.1mJ (off)

ROHS3 Compliant

25W

1.1 μs

-

1.2V

-

15A

9.3mm

3

2.299997g

Single

SILICON

PowerMESH™

e3

3

Matte Tin (Sn) - annealed

Insulated Gate BIP Transistors

3

1

ISOLATED

POWER CONTROL

250ns

N-CHANNEL

1350 ns

8100 ns

20V

2.4V

10.4mm

4.6mm

No SVHC

No

Lead Free

STGF7H60DF vs STGF7NB60SL