STMicroelectronics STGFW35HF60W

Name: STGFW35HF60W
Brand: STMicroelectronics
SKU: 2854536-STGFW35HF60W
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGFW35HF60W

Manufacturer:: STMicroelectronics

Ventron No:: 2854536-STGFW35HF60W

Description:: IGBT 600V 36A 88W TO3PF

ECAD Model:

Datasheet:: STGx(W)35HF60W

Specifications

STMicroelectronics STGFW35HF60W technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGFW35HF60W.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3 Full Pack
Number of Pins
3
Weight
6.961991g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
88W
Base Part Number
STGFW35
Element Configuration
Single
Input Type
Standard
Power - Max
88W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
36A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Test Condition
400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 20A
Gate Charge
140nC
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
30ns/175ns
Switching Energy
290μJ (on), 185μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

STGFW35HF60W Description
The STGFW35HF60W is a 35 A, 600 V Ultrafast IGBT. A new planar technology was used to create this ultrafast IGBT, which has a narrower switching energy variation (Eoff) against temperature. A subset of items created for high switching frequency operation is identified by the suffix "W." (over 100 kHz).

STGFW35HF60W Features
Improved Eoff at elevated temperature
Minimal tail current
Low conduction losses
Low ON-state resistance
High input impedance

STGFW35HF60W Applications
Welding
High frequency converters
Power factor correction
AC and DC motor drives
Solar inverters

STGFW35HF60W More Descriptions

Trans IGBT Chip N-CH 600V 36A 3-Pin(3 Tab) TO-3PF Tube
IGBT Transistors 35A 600V UltraF IGBT Improved Eoff Temp
Insulated Gate Bipolar Transistor, 36A I(C), 600V V(BR)CES, N-Channel
French Electronic Distributor since 1988

Product Comparison

The three parts on the right have similar specifications to STGFW35HF60W.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Subcategory

Max Power Dissipation

Base Part Number

Element Configuration

Input Type

Power - Max

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Test Condition

Vce(on) (Max) @ Vge, Ic

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Radiation Hardening

RoHS Status

Factory Lead Time

Contact Plating

ECCN Code

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Reverse Recovery Time

IGBT Type

Lifecycle Status

Transistor Element Material

Series

JESD-609 Code

Number of Terminations

Terminal Finish

Pin Count

Number of Elements

Power Dissipation

Case Connection

Turn On Delay Time

Transistor Application

Rise Time

Turn On Time

Continuous Collector Current

Turn Off Time-Nom (toff)

Height

Length

Width

REACH SVHC

Lead Free

View Compare
STGFW35HF60W

STMicroelectronics

Through Hole

Through Hole

TO-3P-3 Full Pack

3

6.961991g

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

Insulated Gate BIP Transistors

88W

STGFW35

Single

Standard

88W

N-CHANNEL

600V

36A

600V

2.5V

400V, 20A, 10 Ω, 15V

2.5V @ 15V, 20A

140nC

150A

30ns/175ns

290μJ (on), 185μJ (off)

20V

5.75V

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGFW40V60DF

STMicroelectronics

Through Hole

Through Hole

TO-3PFM, SC-93-3

3

6.961991g

-55°C~175°C TJ

Tube

Active

1 (Unlimited)

-

62.5W

STGFW40

Single

Standard

62.5W

-

600V

80A

600V

1.8V

400V, 40A, 10 Ω, 15V

2.3V @ 15V, 40A

226nC

160A

52ns/208ns

456μJ (on), 411μJ (off)

-

-

-

ROHS3 Compliant

32 Weeks

Tin

EAR99

NOT SPECIFIED

NOT SPECIFIED

41 ns

Trench Field Stop

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STGFW35HF60W vs STGFW40V60DF
STGFW80V60F

STMicroelectronics

Through Hole

Through Hole

TO-3P-3 Full Pack

3

6.961991g

-55°C~175°C TJ

Tube

Active

1 (Unlimited)

-

79W

STGFW80

Single

Standard

79W

-

600V

120A

600V

1.85V

400V, 80A, 10 Ω, 15V

2.3V @ 15V, 80A

448nC

240A

60ns/220ns

1.8mJ (on), 1mJ (off)

-

-

-

ROHS3 Compliant

32 Weeks

-

EAR99

NOT SPECIFIED

NOT SPECIFIED

-

Trench Field Stop

ACTIVE (Last Updated: 8 months ago)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STGFW35HF60W vs STGFW80V60F
STGF7NB60SL

STMicroelectronics

Through Hole

Through Hole

TO-220-3 Full Pack

3

2.299997g

-55°C~150°C TJ

Tube

Active

1 (Unlimited)

Insulated Gate BIP Transistors

25W

STGF7

Single

Standard

-

N-CHANNEL

600V

15A

600V

1.2V

480V, 7A, 1k Ω, 5V

1.6V @ 4.5V, 7A

16nC

20A

1.1μs/5.2μs

4.1mJ (off)

20V

2.4V

No

ROHS3 Compliant

8 Weeks

-

EAR99

-

-

-

-

ACTIVE (Last Updated: 7 months ago)

SILICON

PowerMESH™

e3

3

Matte Tin (Sn) - annealed

3

1

25W

ISOLATED

1.1 μs

POWER CONTROL

250ns

1350 ns

15A

8100 ns

9.3mm

10.4mm

4.6mm

No SVHC

Lead Free

STGFW35HF60W vs STGF7NB60SL