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STGBL6NC60DT4

STMicroelectronics STGBL6NC60DT4

Part Number:
STGBL6NC60DT4
Manufacturer:
STMicroelectronics
Ventron No:
3554837-STGBL6NC60DT4
Description:
IGBT 600V 14A 56W D2PAK
ECAD Model:
Datasheet:
STGBL6NC60DT4

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Specifications
STMicroelectronics STGBL6NC60DT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGBL6NC60DT4.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerMESH™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    56W
  • Terminal Form
    GULL WING
  • Base Part Number
    STGBL6
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Input Type
    Standard
  • Turn On Delay Time
    6.7 ns
  • Power - Max
    56W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    67 ns
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    14A
  • Reverse Recovery Time
    50 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Max Breakdown Voltage
    600V
  • Turn On Time
    10.5 ns
  • Test Condition
    390V, 3A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.9V @ 15V, 3A
  • Turn Off Time-Nom (toff)
    122 ns
  • Gate Charge
    12nC
  • Current - Collector Pulsed (Icm)
    18A
  • Td (on/off) @ 25°C
    6.7ns/46ns
  • Switching Energy
    46.5μJ (on), 23.5μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.75V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STGBL6NC60DT4                               Description This series of hyper fast IGBT is based on PowerMESH technology and exhibits very low turn-off energy, thanks to a new lifetime control system. This results in an optimized trade-off between on-state voltage and switching losses, allowing very high operating frequencies.  
STGBL6NC60DT4                               Features ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode
STGBL6NC60DT4                               Applications ■ Very high frequency operation ■ High frequency lamp ballast ■ SMPS and PFC (including hard switching)

STGBL6NC60DT4 More Descriptions
Trans IGBT Chip N-CH 600V 14A 56000mW 3-Pin(2 Tab) D2PAK T/R
6A, 600 V hyper fast IGBT with very fast diode
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
IGBT Transistors 600V 6A N-Channel
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to STGBL6NC60DT4.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Form
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Input Type
    Turn On Delay Time
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Max Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Radiation Hardening
    RoHS Status
    Lead Free
    Lifecycle Status
    Factory Lead Time
    ECCN Code
    Power Dissipation
    Collector Emitter Saturation Voltage
    Height
    Length
    Width
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Configuration
    Case Connection
    IGBT Type
    View Compare
  • STGBL6NC60DT4
    STGBL6NC60DT4
    STMicroelectronics
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerMESH™
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    Matte Tin (Sn) - annealed
    Insulated Gate BIP Transistors
    56W
    GULL WING
    STGBL6
    4
    R-PSSO-G2
    1
    Single
    Standard
    6.7 ns
    56W
    POWER CONTROL
    N-CHANNEL
    67 ns
    600V
    14A
    50 ns
    600V
    600V
    10.5 ns
    390V, 3A, 10 Ω, 15V
    2.9V @ 15V, 3A
    122 ns
    12nC
    18A
    6.7ns/46ns
    46.5μJ (on), 23.5μJ (off)
    20V
    5.75V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGB20N40LZ
    STGB20N40LZ
    STMicroelectronics
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Cut Tape (CT)
    Automotive, AEC-Q101, PowerMESH™
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    150W
    -
    STGB20
    -
    -
    -
    Single
    Logic
    700 ns
    -
    -
    -
    4.3 μs
    425V
    25A
    -
    390V
    390V
    -
    300V, 10A, 1k Ω, 5V
    1.6V @ 4V, 6A
    -
    24nC
    40A
    700ns/4.3μs
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    EAR99
    150W
    1.5V
    4.6mm
    10.4mm
    9.35mm
    -
    -
    -
    -
    -
    -
    STGBL6NC60DT4 vs STGB20N40LZ
  • STGB30H60DFB
    STGB30H60DFB
    STMicroelectronics
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    -
    -
    -
    Active
    1 (Unlimited)
    2
    -
    -
    260W
    GULL WING
    STGB30
    -
    R-PSSO-G2
    1
    -
    Standard
    -
    260W
    POWER CONTROL
    N-CHANNEL
    -
    2V
    60A
    53 ns
    600V
    600V
    51.1 ns
    400V, 30A, 10 Ω, 15V
    2V @ 15V, 30A
    223 ns
    149nC
    120A
    37ns/146ns
    383μJ (on), 293μJ (off)
    -
    -
    -
    ROHS3 Compliant
    -
    -
    20 Weeks
    EAR99
    -
    -
    -
    -
    -
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Trench Field Stop
    STGBL6NC60DT4 vs STGB30H60DFB
  • STGB30H60DLFB
    STGB30H60DLFB
    STMicroelectronics
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    -
    -
    -
    Active
    1 (Unlimited)
    -
    -
    Insulated Gate BIP Transistors
    260W
    -
    STGB30
    -
    -
    -
    -
    Standard
    -
    260W
    -
    N-CHANNEL
    -
    2V
    60A
    -
    600V
    600V
    -
    400V, 30A, 10 Ω, 15V
    2V @ 15V, 30A
    -
    149nC
    120A
    -/146ns
    393μJ (off)
    20V
    7V
    -
    ROHS3 Compliant
    -
    ACTIVE (Last Updated: 7 months ago)
    20 Weeks
    EAR99
    -
    -
    -
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    Trench Field Stop
    STGBL6NC60DT4 vs STGB30H60DLFB
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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