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STGB20V60F

STMicroelectronics STGB20V60F

Part Number:
STGB20V60F
Manufacturer:
STMicroelectronics
Ventron No:
2494354-STGB20V60F
Description:
IGBT 600V 40A 167W D2PAK
ECAD Model:
Datasheet:
STGB20V60F

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Specifications
STMicroelectronics STGB20V60F technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGB20V60F.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Weight
    2.000002g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Cut Tape (CT)
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Max Power Dissipation
    167W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STGB20
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    167W
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    40A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.8V
  • Max Breakdown Voltage
    600V
  • Test Condition
    400V, 20A, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.2V @ 15V, 20A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    116nC
  • Current - Collector Pulsed (Icm)
    80A
  • Td (on/off) @ 25°C
    38ns/149ns
  • Switching Energy
    200μJ (on), 130μJ (off)
  • Height
    4.6mm
  • Length
    10.4mm
  • Width
    9.35mm
  • RoHS Status
    ROHS3 Compliant
Description
STGB20V60F Description
An IGBT called the STGB20V60F was created employing a cutting-edge, proprietary trench gate and field stop construction. The item belongs to the "V" family of IGBTs, which offer the best conduction and switching loss trade-offs for maximizing the efficiency of very high frequency converters. Additionally, safer paralleling operation is produced by a positive VCE(sat)temperature coefficient and a very narrow parameter distribution.

STGB20V60F Features
Safe paralleling
Tail-less switching off
Low thermal resistance
Tight parameters distribution
Very high speed switching series
Maximum junction temperature: TJ = 175 °C
Lead Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 Afree package

STGB20V60F Applications
Automotive
Enterprise systems
Personal electronics
STGB20V60F More Descriptions
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
Trans IGBT Chip N-CH 600V 40A 3-Pin D2PAK T/R
Short-circuit rugged IGBT, D2PAK, Tape and ReelSTMicroelectronics SCT
IGBT 600V 20A Trench Field-Stop D2PAK
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Igbt |Stmicroelectronics STGB20V60F
Product Comparison
The three parts on the right have similar specifications to STGB20V60F.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Element Configuration
    Input Type
    Power - Max
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Height
    Length
    Width
    RoHS Status
    Transistor Element Material
    Series
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Form
    Current Rating
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation
    Case Connection
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Turn On Time
    Turn Off Time-Nom (toff)
    Gate-Emitter Thr Voltage-Max
    Radiation Hardening
    Lead Free
    Turn On Delay Time
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    View Compare
  • STGB20V60F
    STGB20V60F
    STMicroelectronics
    ACTIVE (Last Updated: 7 months ago)
    20 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    2.000002g
    -55°C~175°C TJ
    Cut Tape (CT)
    Active
    1 (Unlimited)
    EAR99
    167W
    NOT SPECIFIED
    NOT SPECIFIED
    STGB20
    Single
    Standard
    167W
    600V
    40A
    600V
    1.8V
    600V
    400V, 20A, 15V
    2.2V @ 15V, 20A
    Trench Field Stop
    116nC
    80A
    38ns/149ns
    200μJ (on), 130μJ (off)
    4.6mm
    10.4mm
    9.35mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGB10NB37LZT4
    STGB10NB37LZT4
    STMicroelectronics
    -
    8 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -65°C~175°C TJ
    Tape & Reel (TR)
    Active
    1 (Unlimited)
    EAR99
    125W
    245
    30
    STGB10
    Single
    Standard
    -
    440V
    20A
    440V
    -
    440V
    328V, 10A, 1k Ω, 5V
    1.8V @ 4.5V, 10A
    -
    28nC
    40A
    1.3μs/8μs
    2.4mJ (on), 5mJ (off)
    4.6mm
    10.4mm
    9.35mm
    ROHS3 Compliant
    SILICON
    PowerMESH™
    e3
    yes
    2
    Matte Tin (Sn) - annealed
    VOLTAGE CLAMPING
    Insulated Gate BIP Transistors
    GULL WING
    20A
    3
    R-PSSO-G2
    1
    125W
    COLLECTOR
    AUTOMOTIVE IGNITION
    340ns
    N-CHANNEL
    860 ns
    17800 ns
    2.4V
    No
    Lead Free
    -
    -
    -
    STGB20V60F vs STGB10NB37LZT4
  • STGB20N40LZ
    STGB20N40LZ
    STMicroelectronics
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Cut Tape (CT)
    Active
    1 (Unlimited)
    EAR99
    150W
    -
    -
    STGB20
    Single
    Logic
    -
    425V
    25A
    390V
    1.5V
    390V
    300V, 10A, 1k Ω, 5V
    1.6V @ 4V, 6A
    -
    24nC
    40A
    700ns/4.3μs
    -
    4.6mm
    10.4mm
    9.35mm
    ROHS3 Compliant
    -
    Automotive, AEC-Q101, PowerMESH™
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    150W
    -
    -
    -
    -
    -
    -
    -
    No
    Lead Free
    700 ns
    4.3 μs
    -
    STGB20V60F vs STGB20N40LZ
  • STGB20NB37LZT4
    STGB20NB37LZT4
    STMicroelectronics
    -
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    Obsolete
    1 (Unlimited)
    EAR99
    200W
    245
    30
    STGB20
    Single
    Standard
    -
    375V
    40A
    425V
    2V
    425V
    250V, 20A, 1k Ω, 4.5V
    2V @ 4.5V, 20A
    -
    51nC
    80A
    2.3μs/2μs
    11.8mJ (off)
    -
    -
    -
    ROHS3 Compliant
    SILICON
    PowerMESH™
    e3
    -
    2
    Matte Tin (Sn)
    -
    Insulated Gate BIP Transistors
    GULL WING
    20A
    3
    R-PSSO-G2
    1
    200W
    COLLECTOR
    POWER CONTROL
    -
    N-CHANNEL
    2900 ns
    15000 ns
    2V
    No
    Lead Free
    2.3 μs
    2 μs
    20A
    STGB20V60F vs STGB20NB37LZT4
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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