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STGB20V60DF

STMicroelectronics STGB20V60DF

Part Number:
STGB20V60DF
Manufacturer:
STMicroelectronics
Ventron No:
2854526-STGB20V60DF
Description:
IGBT 600V 40A 167W D2PAK
ECAD Model:
Datasheet:
STGB20V60DF

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Specifications
STMicroelectronics STGB20V60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGB20V60DF.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Mounting Type
    Surface Mount
  • Mount
    Surface Mount
  • Number of Pins
    3
  • Weight
    2.240009g
  • Packaging
    Cut Tape (CT)
  • Operating Temperature
    -55°C~175°C TJ
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    167W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STGB20
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    167W
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    40A
  • Reverse Recovery Time
    40 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.8V
  • Max Breakdown Voltage
    600V
  • Test Condition
    400V, 20A, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.2V @ 15V, 20A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    116nC
  • Current - Collector Pulsed (Icm)
    80A
  • Td (on/off) @ 25°C
    38ns/149ns
  • Switching Energy
    200μJ (on), 130μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Width
    9.35mm
  • Length
    10.4mm
  • Height
    4.6mm
  • RoHS Status
    ROHS3 Compliant
Description
STGB20V60DF Description
This IGBT gadget was created employing a cutting-edge, exclusive trench gate and field stop structure. The component is an IGBT from the "V" series, which offers the best balance between conduction and switching losses to enhance the efficiency of very high frequency converters. Additionally, safer paralleling operation is produced by a positive VCE(sat) temperature coefficient and a very narrow parameter distribution.

STGB20V60DF Features
? Tight parameters distribution
? Paralleling safely
? Low thermal conductivity
? Antiparallel diode with very quick soft recovery
Lead-free packaging

STGB20V60DF Applications
? solar power inverters
? Continuity of electricity supply
? Welder
? Power factor adjustment
? Converters with a very high frequency
STGB20V60DF More Descriptions
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
Trans IGBT Chip N-CH 600V 40A 3-Pin(2 Tab) D2PAK T/R
Short-circuit rugged IGBT, D2PAK, Tape and ReelSTMicroelectronics SCT
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel
Igbt |Stmicroelectronics STGB20V60DF
Product Comparison
The three parts on the right have similar specifications to STGB20V60DF.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Package / Case
    Mounting Type
    Mount
    Number of Pins
    Weight
    Packaging
    Operating Temperature
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Element Configuration
    Input Type
    Power - Max
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Width
    Length
    Height
    RoHS Status
    Factory Lead Time
    Transistor Element Material
    Series
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Additional Feature
    Terminal Form
    Current Rating
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation
    Case Connection
    Transistor Application
    Rise Time
    Turn On Time
    Turn Off Time-Nom (toff)
    Gate-Emitter Thr Voltage-Max
    Radiation Hardening
    Lead Free
    View Compare
  • STGB20V60DF
    STGB20V60DF
    STMicroelectronics
    ACTIVE (Last Updated: 7 months ago)
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    Surface Mount
    Surface Mount
    3
    2.240009g
    Cut Tape (CT)
    -55°C~175°C TJ
    Discontinued
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    167W
    NOT SPECIFIED
    NOT SPECIFIED
    STGB20
    Single
    Standard
    167W
    N-CHANNEL
    600V
    40A
    40 ns
    600V
    1.8V
    600V
    400V, 20A, 15V
    2.2V @ 15V, 20A
    Trench Field Stop
    116nC
    80A
    38ns/149ns
    200μJ (on), 130μJ (off)
    20V
    9.35mm
    10.4mm
    4.6mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGB10NB37LZT4
    STGB10NB37LZT4
    STMicroelectronics
    -
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    Surface Mount
    Surface Mount
    3
    -
    Tape & Reel (TR)
    -65°C~175°C TJ
    Active
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    125W
    245
    30
    STGB10
    Single
    Standard
    -
    N-CHANNEL
    440V
    20A
    -
    440V
    -
    440V
    328V, 10A, 1k Ω, 5V
    1.8V @ 4.5V, 10A
    -
    28nC
    40A
    1.3μs/8μs
    2.4mJ (on), 5mJ (off)
    -
    9.35mm
    10.4mm
    4.6mm
    ROHS3 Compliant
    8 Weeks
    SILICON
    PowerMESH™
    e3
    yes
    2
    Matte Tin (Sn) - annealed
    VOLTAGE CLAMPING
    GULL WING
    20A
    3
    R-PSSO-G2
    1
    125W
    COLLECTOR
    AUTOMOTIVE IGNITION
    340ns
    860 ns
    17800 ns
    2.4V
    No
    Lead Free
    STGB20V60DF vs STGB10NB37LZT4
  • STGB30H60DLFB
    STGB30H60DLFB
    STMicroelectronics
    ACTIVE (Last Updated: 7 months ago)
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    Surface Mount
    Surface Mount
    -
    -
    Tape & Reel (TR)
    -55°C~175°C TJ
    Active
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    260W
    NOT SPECIFIED
    NOT SPECIFIED
    STGB30
    -
    Standard
    260W
    N-CHANNEL
    2V
    60A
    -
    600V
    -
    600V
    400V, 30A, 10 Ω, 15V
    2V @ 15V, 30A
    Trench Field Stop
    149nC
    120A
    -/146ns
    393μJ (off)
    20V
    -
    -
    -
    ROHS3 Compliant
    20 Weeks
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    7V
    -
    -
    STGB20V60DF vs STGB30H60DLFB
  • STGB10H60DF
    STGB10H60DF
    STMicroelectronics
    ACTIVE (Last Updated: 7 months ago)
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    Surface Mount
    Surface Mount
    3
    2.000002g
    Cut Tape (CT)
    -55°C~175°C TJ
    Active
    1 (Unlimited)
    EAR99
    -
    115W
    NOT SPECIFIED
    NOT SPECIFIED
    STGB10
    Single
    Standard
    115W
    -
    600V
    20A
    107 ns
    600V
    1.5V
    600V
    400V, 10A, 10 Ω, 15V
    1.95V @ 15V, 10A
    Trench Field Stop
    57nC
    40A
    19.5ns/103ns
    83μJ (on), 140μJ (off)
    -
    9.35mm
    10.4mm
    4.6mm
    ROHS3 Compliant
    20 Weeks
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STGB20V60DF vs STGB10H60DF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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