STMicroelectronics STGB19NC60KDT4
- Part Number:
- STGB19NC60KDT4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2495638-STGB19NC60KDT4
- Description:
- IGBT 600V 35A 125W D2PAK
- ECAD Model:
-
- Datasheet:
- STGB19NC60KDT4
STMicroelectronics STGB19NC60KDT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGB19NC60KDT4.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerMESH™
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation125W
- Terminal FormGULL WING
- Base Part NumberSTGB19
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max125W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current35A
- Reverse Recovery Time31 ns
- Collector Emitter Breakdown Voltage600V
- Max Breakdown Voltage600V
- Turn On Time38 ns
- Test Condition480V, 12A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.75V @ 15V, 12A
- Turn Off Time-Nom (toff)270 ns
- Gate Charge55nC
- Current - Collector Pulsed (Icm)75A
- Td (on/off) @ 25°C30ns/105ns
- Switching Energy165μJ (on), 255μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STGB19NC60KDT4 Description
STGB19NC60KDT4 is a 20A, 600v short-circuit rugged IGBT manufactured by STMicroelectronics. The STMicroelectronics STGB19NC60KDT4 is a very fast IGBT developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. The STGB19NC60KDT4 operates within ambient temperatures from -55 to 150°C and with a power dissipation of 125W.
STGB19NC60KDT4 Features
Low on voltage drop (VCE(sat))
Low CRES / CIES ratio (no cross-conduction susceptibility)
Short-circuit withstand time 10 μs
IGBT co-packaged with ultrafast freewheeling diode
In D2PAK package
STGB19NC60KDT4 Applications
High-frequency inverters DC Drive AC Drive Servo Motor Drives and Controllers Stepper
STGB19NC60KDT4 is a 20A, 600v short-circuit rugged IGBT manufactured by STMicroelectronics. The STMicroelectronics STGB19NC60KDT4 is a very fast IGBT developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. The STGB19NC60KDT4 operates within ambient temperatures from -55 to 150°C and with a power dissipation of 125W.
STGB19NC60KDT4 Features
Low on voltage drop (VCE(sat))
Low CRES / CIES ratio (no cross-conduction susceptibility)
Short-circuit withstand time 10 μs
IGBT co-packaged with ultrafast freewheeling diode
In D2PAK package
STGB19NC60KDT4 Applications
High-frequency inverters DC Drive AC Drive Servo Motor Drives and Controllers Stepper
STGB19NC60KDT4 More Descriptions
Trans IGBT Chip N-CH 600V 35A 125000mW 3-Pin(2 Tab) D2PAK T/R
STGB19NC60KD Series Switching Performance Surface Mount IGBT - TO-263-3
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Igbt |Stmicroelectronics STGB19NC60KDT4
125W 35A 600V D2PAK IGBTs ROHS
STGB19NC60KD Series Switching Performance Surface Mount IGBT - TO-263-3
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Igbt |Stmicroelectronics STGB19NC60KDT4
125W 35A 600V D2PAK IGBTs ROHS
The three parts on the right have similar specifications to STGB19NC60KDT4.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationTerminal FormBase Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageMax Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRadiation HardeningRoHS StatusJESD-609 CodePbfree CodeTerminal FinishAdditional FeaturePeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Power DissipationCase ConnectionRise TimeHeightLengthWidthLead FreeIGBT TypeTurn On Delay TimeTurn-Off Delay TimeContinuous Drain Current (ID)Collector Emitter Saturation VoltageView Compare
-
STGB19NC60KDT4ACTIVE (Last Updated: 7 months ago)8 WeeksTinSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~150°C TJTape & Reel (TR)PowerMESH™Active1 (Unlimited)2EAR99Insulated Gate BIP Transistors125WGULL WINGSTGB194R-PSSO-G21SingleStandard125WPOWER CONTROLN-CHANNEL600V35A31 ns600V600V38 ns480V, 12A, 10 Ω, 15V2.75V @ 15V, 12A270 ns55nC75A30ns/105ns165μJ (on), 255μJ (off)20V6.5VNoROHS3 Compliant-------------------- -
-8 Weeks-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-65°C~175°C TJTape & Reel (TR)PowerMESH™Active1 (Unlimited)2EAR99Insulated Gate BIP Transistors125WGULL WINGSTGB103R-PSSO-G21SingleStandard-AUTOMOTIVE IGNITIONN-CHANNEL440V20A-440V440V860 ns328V, 10A, 1k Ω, 5V1.8V @ 4.5V, 10A17800 ns28nC40A1.3μs/8μs2.4mJ (on), 5mJ (off)-2.4VNoROHS3 Compliante3yesMatte Tin (Sn) - annealedVOLTAGE CLAMPING24520A30125WCOLLECTOR340ns4.6mm10.4mm9.35mmLead Free-----
-
ACTIVE (Last Updated: 7 months ago)20 Weeks-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)-Active1 (Unlimited)-EAR99Insulated Gate BIP Transistors260W-STGB30----Standard260W-N-CHANNEL2V60A-600V600V-400V, 30A, 10 Ω, 15V2V @ 15V, 30A-149nC120A-/146ns393μJ (off)20V7V-ROHS3 Compliant----NOT SPECIFIED-NOT SPECIFIED-------Trench Field Stop----
-
---Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)PowerMESH™Obsolete1 (Unlimited)2EAR99Insulated Gate BIP Transistors200WGULL WINGSTGB203R-PSSO-G21SingleStandard-POWER CONTROLN-CHANNEL375V40A-425V425V2900 ns250V, 20A, 1k Ω, 4.5V2V @ 4.5V, 20A15000 ns51nC80A2.3μs/2μs11.8mJ (off)-2VNoROHS3 Compliante3-Matte Tin (Sn)-24520A30200WCOLLECTOR----Lead Free-2.3 μs2 μs20A2V
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
20 March 2024
PCF8563 Alternatives, Characteristics, Functions and More
Ⅰ. Introduction to PCF8563Ⅱ. Characteristics of PCF8563Ⅲ. Main functions of PCF8563Ⅳ. Block diagram of PCF8563Ⅴ. How does PCF8563 work?Ⅵ. Application circuit of PCF8563Ⅶ. Limiting values of PCF8563Ⅷ. How... -
21 March 2024
RC0402FR-075K1L Characteristics, Specifications, Construction and Other Details
Ⅰ. Overview of RC0402FR-075K1LⅡ. Characteristics of RC0402FR-075K1LⅢ. Specifications of RC0402FR-075K1LⅣ. Construction of RC0402FR-075K1LⅤ. Application of RC0402FR-075K1LⅥ. Inventory history of RC0402FR-075K1LⅦ. Manufacturer of RC0402FR-075K1LⅧ. How to use RC0402FR-075K1L resistor... -
21 March 2024
A Comprehensive Guide to AO3400 Field-Effect Transistor
Ⅰ. Introduction to AO3400Ⅱ. AO3400 technical parametersⅢ. AO3400 symbol, footprint and pin configurationⅣ. AO3400 principle of operationⅤ. What is the typical circuit application of AO3400?Ⅵ. Manufacturer of AO3400Ⅶ.... -
22 March 2024
FT232RL Alternatives, Structure, Package and FT232RL vs FT232BL
Ⅰ. Development history of FT232RLⅡ. What is FT232RL?Ⅲ. Structure of FT232RLⅣ. FT232RL block diagramⅤ. How does FT232RL work?Ⅵ. Typical applications of FT232RLⅦ. Package of FT232RLⅧ. What is the...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.