STMicroelectronics STGB14NC60KT4
- Part Number:
- STGB14NC60KT4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2494539-STGB14NC60KT4
- Description:
- IGBT 600V 25A 80W D2PAK
- Datasheet:
- STGB14NC60KT4
STMicroelectronics STGB14NC60KT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGB14NC60KT4.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerMESH™
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC600V
- Max Power Dissipation80W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)245
- Current Rating14A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTGB14
- Pin Count3
- JESD-30 CodeR-PDSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation80W
- Input TypeStandard
- Turn On Delay Time22.5 ns
- Transistor ApplicationPOWER CONTROL
- Rise Time8.5ns
- Drain to Source Voltage (Vdss)600V
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time116 ns
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current25A
- Continuous Drain Current (ID)25A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.5V
- Max Breakdown Voltage600V
- Turn On Time31.5 ns
- Test Condition390V, 7A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 7A
- Turn Off Time-Nom (toff)340 ns
- Gate Charge34.4nC
- Td (on/off) @ 25°C22.5ns/116ns
- Switching Energy82μJ (on), 155μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STGB14NC60KT4 Description
STGB14NC60KT4 is a 600v N-channel short circuit rated powerMESH? IGBT. The transistor can be applied in high-frequency inverters, and motor drivers with short-circuit protection applications due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor STGB14NC60KT4 is in the D2PAK package with 80W Power dissipation.
STGB14NC60KT4 Features
Low on-voltage drop (Vcesat) Low Cres / Cies ratio ( no cross-conduction susceptibility) Short circuit withstand time 10μs Collector current (pulsed): 50A Gate-emitter voltage: ±20V
STGB14NC60KT4 Applications
High-frequency inverters Motor drivers with short circuit protection Automotive Body electronics & lighting Communications equipment Datacom module Personal electronics Connected peripherals & printers
STGB14NC60KT4 is a 600v N-channel short circuit rated powerMESH? IGBT. The transistor can be applied in high-frequency inverters, and motor drivers with short-circuit protection applications due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor STGB14NC60KT4 is in the D2PAK package with 80W Power dissipation.
STGB14NC60KT4 Features
Low on-voltage drop (Vcesat) Low Cres / Cies ratio ( no cross-conduction susceptibility) Short circuit withstand time 10μs Collector current (pulsed): 50A Gate-emitter voltage: ±20V
STGB14NC60KT4 Applications
High-frequency inverters Motor drivers with short circuit protection Automotive Body electronics & lighting Communications equipment Datacom module Personal electronics Connected peripherals & printers
STGB14NC60KT4 More Descriptions
IGBT 600V 25A 80W D2PAK
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel
New short circuit rugged "K" series
IGBT, SMD, 600V, 14A, D2-PAK; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: -; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 25A; Fall Time tf: 75ns; Pulsed Current Icm: 50A; Rise Time: 8.5ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: Power IGBT; Voltage Vces: 600V
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel
New short circuit rugged "K" series
IGBT, SMD, 600V, 14A, D2-PAK; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: -; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 25A; Fall Time tf: 75ns; Pulsed Current Icm: 50A; Rise Time: 8.5ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: Power IGBT; Voltage Vces: 600V
The three parts on the right have similar specifications to STGB14NC60KT4.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationInput TypeTurn On Delay TimeTransistor ApplicationRise TimeDrain to Source Voltage (Vdss)Polarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentContinuous Drain Current (ID)Collector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeTd (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxREACH SVHCRadiation HardeningRoHS StatusLead FreeLifecycle StatusFactory Lead TimeCurrent - Collector Pulsed (Icm)HeightLengthWidthConfigurationCase ConnectionPower - MaxReverse Recovery TimeIGBT TypeWeightView Compare
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STGB14NC60KT4Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~150°C TJTape & Reel (TR)PowerMESH™e3Obsolete1 (Unlimited)2SMD/SMTEAR99Matte Tin (Sn)Insulated Gate BIP Transistors600V80WDUALGULL WING24514A30STGB143R-PDSO-G21Single80WStandard22.5 nsPOWER CONTROL8.5ns600VN-CHANNEL116 ns600V25A25A600V2.5V600V31.5 ns390V, 7A, 10 Ω, 15V2.5V @ 15V, 7A340 ns34.4nC22.5ns/116ns82μJ (on), 155μJ (off)20V6.5VNo SVHCNoROHS3 CompliantLead Free-------------
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJCut Tape (CT)Automotive, AEC-Q101, PowerMESH™-Active1 (Unlimited)--EAR99---150W-----STGB20---Single150WLogic700 ns----4.3 μs425V25A-390V1.5V390V-300V, 10A, 1k Ω, 5V1.6V @ 4V, 6A-24nC700ns/4.3μs----NoROHS3 CompliantLead FreeACTIVE (Last Updated: 7 months ago)8 Weeks40A4.6mm10.4mm9.35mm------
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)--Active1 (Unlimited)2-EAR99---260WSINGLEGULL WINGNOT SPECIFIED-NOT SPECIFIEDSTGB30-R-PSSO-G21--Standard-POWER CONTROL--N-CHANNEL-2V60A-600V-600V51.1 ns400V, 30A, 10 Ω, 15V2V @ 15V, 30A223 ns149nC37ns/146ns383μJ (on), 293μJ (off)----ROHS3 Compliant--20 Weeks120A---SINGLE WITH BUILT-IN DIODECOLLECTOR260W53 nsTrench Field Stop-
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJCut Tape (CT)--Active1 (Unlimited)--EAR99---115W--NOT SPECIFIED-NOT SPECIFIEDSTGB10---Single-Standard------600V20A-600V1.5V600V-400V, 10A, 10 Ω, 15V1.95V @ 15V, 10A-57nC19.5ns/103ns83μJ (on), 140μJ (off)----ROHS3 Compliant-ACTIVE (Last Updated: 7 months ago)20 Weeks40A4.6mm10.4mm9.35mm--115W107 nsTrench Field Stop2.000002g
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