STMicroelectronics STGB10NC60KT4

Name: STGB10NC60KT4
Brand: STMicroelectronics
SKU: 2854716-STGB10NC60KT4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGB10NC60KT4

Manufacturer:: STMicroelectronics

Ventron No:: 2854716-STGB10NC60KT4

Description:: IGBT 600V 20A 65W D2PAK

ECAD Model:

Datasheet:: STGB10NC60KT4

Specifications

STMicroelectronics STGB10NC60KT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGB10NC60KT4.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerMESH™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Additional Feature
ULTRA FAST
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
65W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Current Rating
10A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STGB10
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
60W
Input Type
Standard
Turn On Delay Time
17 ns
Power - Max
65W
Transistor Application
POWER CONTROL
Rise Time
6ns
Drain to Source Voltage (Vdss)
600V
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
72 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
20A
Continuous Drain Current (ID)
10A
Collector Emitter Breakdown Voltage
600V
Max Breakdown Voltage
600V
Turn On Time
23 ns
Test Condition
390V, 5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 5A
Turn Off Time-Nom (toff)
242 ns
Gate Charge
19nC
Current - Collector Pulsed (Icm)
30A
Td (on/off) @ 25°C
17ns/72ns
Switching Energy
55μJ (on), 85μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STGB10NC60KT4 Description
This device makes excellent use of the cutting-edge Power MESHTM technology to balance switching performance and low on-state. behavior.

STGB10NC60KT4 Features
Low on voltage drop (VCESAT)
Short-circuit withstand time 10 μs

STGB10NC60KT4 Applications
High frequency motor controls
SMPS and PFC in both hard switch and resonant topologies
Motor drives

STGB10NC60KT4 More Descriptions

Trans IGBT Chip N-CH 600V 20A 65000mW 3-Pin(2 Tab) D2PAK T/R
10 A, 600 V short-circuit rugged IGBT
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel
French Electronic Distributor since 1988
IGBT, SMD, 600V, 10A, D2-PAK; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: -; Transistor Case Style: TO-263; No. of Pins: 3Pins;

Product Comparison

The three parts on the right have similar specifications to STGB10NC60KT4.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Power Dissipation

Input Type

Turn On Delay Time

Power - Max

Transistor Application

Rise Time

Drain to Source Voltage (Vdss)

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Continuous Drain Current (ID)

Collector Emitter Breakdown Voltage

Max Breakdown Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Radiation Hardening

RoHS Status

Lead Free

Factory Lead Time

Case Connection

Height

Length

Width

Terminal Position

Configuration

Reverse Recovery Time

IGBT Type

Lifecycle Status

Weight

Collector Emitter Saturation Voltage

View Compare
STGB10NC60KT4

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerMESH™

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

MATTE TIN

ULTRA FAST

Insulated Gate BIP Transistors

600V

65W

GULL WING

245

10A

30

STGB10

3

R-PSSO-G2

1

Single

60W

Standard

17 ns

65W

POWER CONTROL

6ns

600V

N-CHANNEL

72 ns

600V

20A

10A

600V

600V

23 ns

390V, 5A, 10 Ω, 15V

2.5V @ 15V, 5A

242 ns

19nC

30A

17ns/72ns

55μJ (on), 85μJ (off)

20V

6.5V

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
STGB10NB37LZT4

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-65°C~175°C TJ

Tape & Reel (TR)

PowerMESH™

e3

yes

Active

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - annealed

VOLTAGE CLAMPING

Insulated Gate BIP Transistors

-

125W

GULL WING

245

20A

30

STGB10

3

R-PSSO-G2

1

Single

125W

Standard

-

-

AUTOMOTIVE IGNITION

340ns

-

N-CHANNEL

-

440V

20A

-

440V

440V

860 ns

328V, 10A, 1k Ω, 5V

1.8V @ 4.5V, 10A

17800 ns

28nC

40A

1.3μs/8μs

2.4mJ (on), 5mJ (off)

-

2.4V

No

ROHS3 Compliant

Lead Free

8 Weeks

COLLECTOR

4.6mm

10.4mm

9.35mm

-

-

-

-

-

-

-

STGB10NC60KT4 vs STGB10NB37LZT4
STGB30H60DFB

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

-

-

-

Active

1 (Unlimited)

2

EAR99

-

-

-

-

260W

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

STGB30

-

R-PSSO-G2

1

-

-

Standard

-

260W

POWER CONTROL

-

-

N-CHANNEL

-

2V

60A

-

600V

600V

51.1 ns

400V, 30A, 10 Ω, 15V

2V @ 15V, 30A

223 ns

149nC

120A

37ns/146ns

383μJ (on), 293μJ (off)

-

-

-

ROHS3 Compliant

-

20 Weeks

COLLECTOR

-

-

-

SINGLE

SINGLE WITH BUILT-IN DIODE

53 ns

Trench Field Stop

-

-

-

STGB10NC60KT4 vs STGB30H60DFB
STGB10H60DF

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-55°C~175°C TJ

Cut Tape (CT)

-

-

-

Active

1 (Unlimited)

-

EAR99

-

-

-

-

115W

-

NOT SPECIFIED

-

NOT SPECIFIED

STGB10

-

-

-

Single

-

Standard

-

115W

-

-

-

-

-

600V

20A

-

600V

600V

-

400V, 10A, 10 Ω, 15V

1.95V @ 15V, 10A

-

57nC

40A

19.5ns/103ns

83μJ (on), 140μJ (off)

-

-

-

ROHS3 Compliant

-

20 Weeks

-

4.6mm

10.4mm

9.35mm

-

-

107 ns

Trench Field Stop

ACTIVE (Last Updated: 7 months ago)

2.000002g

1.5V

STGB10NC60KT4 vs STGB10H60DF