Vishay Siliconix SI7940DP-T1-E3

Name: SI7940DP-T1-E3
Brand: Vishay Siliconix
SKU: 3069845-SI7940DP-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI7940DP-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 3069845-SI7940DP-T1-E3

Description:: MOSFET 2N-CH 12V 7.6A PPAK SO-8

ECAD Model:

Datasheet:: SI7940DP-T1-E3

Specifications

Vishay Siliconix SI7940DP-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7940DP-T1-E3.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
17mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Max Power Dissipation
1.4W
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
SI7940
Pin Count
8
JESD-30 Code
R-XDSO-C6
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.4W
Case Connection
DRAIN
Turn On Delay Time
30 ns
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
17m Ω @ 11.8A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
17nC @ 4.5V
Rise Time
50ns
Drain to Source Voltage (Vdss)
12V
Fall Time (Typ)
50 ns
Turn-Off Delay Time
60 ns
Continuous Drain Current (ID)
7.6A
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
12V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI7940DP-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI7940DP-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI7940DP-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

SI7940DP-T1-E3 More Descriptions

TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,12V V(BR)DSS,7.6A I(D),LLCC
Trans MOSFET N-CH 12V 7.6A 8-Pin PowerPAK SO T/R
MOSFET 2N-CH 12V 7.6A PPAK SO-8
Dual MOSFETs 12V 11.8A 0.017Ohm
DUAL N-CHANNEL 12-V (D-S) MOSFET

Product Comparison

The three parts on the right have similar specifications to SI7940DP-T1-E3.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

FET Technology

FET Feature

Radiation Hardening

RoHS Status

Lead Free

Factory Lead Time

Transistor Application

Current - Continuous Drain (Id) @ 25°C

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Height

Length

Width

Threshold Voltage

Drain Current-Max (Abs) (ID)

Nominal Vgs

REACH SVHC

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Power - Max

Drain to Source Resistance

Rds On Max

View Compare
SI7940DP-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

PowerPAK® SO-8 Dual

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

yes

Obsolete

1 (Unlimited)

6

EAR99

17mOhm

Matte Tin (Sn)

FET General Purpose Power

1.4W

C BEND

260

40

SI7940

8

R-XDSO-C6

2

Dual

ENHANCEMENT MODE

1.4W

DRAIN

30 ns

2 N-Channel (Dual)

17m Ω @ 11.8A, 4.5V

1.5V @ 250μA

17nC @ 4.5V

50ns

12V

50 ns

60 ns

7.6A

8V

12V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI7922DN-T1-GE3

Vishay Siliconix

Surface Mount

Surface Mount

PowerPAK® 1212-8 Dual

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

yes

Active

1 (Unlimited)

6

EAR99

195mOhm

Matte Tin (Sn)

FET General Purpose Powers

1.3W

C BEND

260

30

SI7922

8

S-XDSO-C6

2

Dual

ENHANCEMENT MODE

1.3W

DRAIN

7 ns

2 N-Channel (Dual)

195m Ω @ 2.5A, 10V

3.5V @ 250μA

8nC @ 10V

11ns

100V

11 ns

8 ns

2.5A

20V

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

No

ROHS3 Compliant

Lead Free

15 Weeks

SWITCHING

1.8A

10A

100V

1.04mm

3.05mm

3.05mm

-

-

-

-

-

-

-

-

-

-

SI7940DP-T1-E3 vs SI7922DN-T1-GE3
SI7945DP-T1-GE3

Vishay Siliconix

Surface Mount

Surface Mount

PowerPAK® SO-8 Dual

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2012

e3

yes

Obsolete

1 (Unlimited)

6

EAR99

20MOhm

Matte Tin (Sn)

Other Transistors

1.4W

C BEND

260

40

SI7945

8

R-XDSO-C6

2

Dual

ENHANCEMENT MODE

1.4W

DRAIN

15 ns

2 P-Channel (Dual)

20m Ω @ 10.9A, 10V

3V @ 250μA

74nC @ 10V

15ns

-

15 ns

130 ns

10.9A

20V

30V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

No

ROHS3 Compliant

Lead Free

-

SWITCHING

7A

30A

-

-

-

-

-3V

7A

20 V

Unknown

-

-

-

-

-

-

SI7940DP-T1-E3 vs SI7945DP-T1-GE3
SI7904DN-T1-GE3

Vishay Siliconix

Surface Mount

Surface Mount

PowerPAK® 1212-8 Dual

-

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

-

-

Obsolete

1 (Unlimited)

-

-

30mOhm

-

-

1.3W

-

-

-

SI7904

-

-

-

Dual

-

-

-

15 ns

2 N-Channel (Dual)

30mOhm @ 7.7A, 4.5V

1V @ 935μA

15nC @ 4.5V

50ns

20V

45 ns

60 ns

5.3A

8V

20V

-

Logic Level Gate

No

ROHS3 Compliant

-

-

-

5.3A

-

-

-

-

-

-

-

-

-

PowerPAK® 1212-8 Dual

150°C

-55°C

1.3W

30mOhm

30 mΩ

SI7940DP-T1-E3 vs SI7904DN-T1-GE3