Infineon Technologies IRF7317PBF
- Part Number:
- IRF7317PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3813717-IRF7317PBF
- Description:
- MOSFET N/P-CH 20V 8-SOIC
- Datasheet:
- IRF7317PBF
Infineon Technologies IRF7317PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7317PBF.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1997
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Base Part NumberIRF7317PBF
- Power - Max2W
- FET TypeN and P-Channel
- Rds On (Max) @ Id, Vgs29m Ω @ 6A, 4.5V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds900pF @ 15V
- Current - Continuous Drain (Id) @ 25°C6.6A 5.3A
- Gate Charge (Qg) (Max) @ Vgs27nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- FET FeatureLogic Level Gate
- RoHS StatusROHS3 Compliant
IRF7317PBF Description
The Infineon Technologies IRF7317PBF is a 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package from International Rectifier. The extraordinarily low on-resistance is achieved through innovative processing techniques.
IRF7317PBF Features
RoHS Compliant
Low RDS(on)
Dynamic dv/dt Rating
Fast Switching
Dual N and P-Channel MOSFET
IRF7317PBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
The Infineon Technologies IRF7317PBF is a 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package from International Rectifier. The extraordinarily low on-resistance is achieved through innovative processing techniques.
IRF7317PBF Features
RoHS Compliant
Low RDS(on)
Dynamic dv/dt Rating
Fast Switching
Dual N and P-Channel MOSFET
IRF7317PBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
IRF7317PBF More Descriptions
Dual N/P-Channel 20 V 0.029/0.058 Ohm 18/19 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N/P-CH 20V 6.6A/5.3A 8-Pin SOIC Tube
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:6.6A; On Resistance, Rds(on):29mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Cont Current Id N Channel 2:6.6A; Cont Current Id P Channel:5.3A; Current Id Max:6.6A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance N Channel Max:29mohm; On State Resistance P Channel Max:58mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:26A; Pulse Current Idm N Channel 2:26A; Pulse Current Idm P Channel:21A; Row Pitch:6.3mm; SMD Marking:F7317; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:700mV; Voltage Vgs th Max:3V
Trans MOSFET N/P-CH 20V 6.6A/5.3A 8-Pin SOIC Tube
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:6.6A; On Resistance, Rds(on):29mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Cont Current Id N Channel 2:6.6A; Cont Current Id P Channel:5.3A; Current Id Max:6.6A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance N Channel Max:29mohm; On State Resistance P Channel Max:58mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:26A; Pulse Current Idm N Channel 2:26A; Pulse Current Idm P Channel:21A; Row Pitch:6.3mm; SMD Marking:F7317; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:700mV; Voltage Vgs th Max:3V
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