SUD50NP04-77P-T4E3

Vishay Siliconix SUD50NP04-77P-T4E3

Part Number:
SUD50NP04-77P-T4E3
Manufacturer:
Vishay Siliconix
Ventron No:
3813617-SUD50NP04-77P-T4E3
Description:
MOSFET N/P-CH 40V 8A TO252-4
ECAD Model:
Datasheet:
SUD50NP04-77P-T4E3

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Specifications
Vishay Siliconix SUD50NP04-77P-T4E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SUD50NP04-77P-T4E3.
  • Factory Lead Time
    6 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-5, DPak (4 Leads Tab), TO-252AD
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2016
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    37mOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    24W
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    10.8W
  • Power - Max
    10.8W 24W
  • FET Type
    N and P-Channel, Common Drain
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    37m Ω @ 5A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    640pF @ 20V
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Rise Time
    14ns
  • Drain to Source Voltage (Vdss)
    40V
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    36 ns
  • Continuous Drain Current (ID)
    8A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    8A
  • Drain to Source Breakdown Voltage
    40V
  • Pulsed Drain Current-Max (IDM)
    35A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Standard
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SUD50NP04-77P-T4E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SUD50NP04-77P-T4E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SUD50NP04-77P-T4E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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