Vishay Siliconix SI7911DN-T1-GE3
- Part Number:
- SI7911DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3069837-SI7911DN-T1-GE3
- Description:
- MOSFET 2P-CH 20V 4.2A 1212-8
- ECAD Model:
-
- Datasheet:
- SI7911DN-T1-GE3
Vishay Siliconix SI7911DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7911DN-T1-GE3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® 1212-8 Dual
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishPURE MATTE TIN
- SubcategoryOther Transistors
- Max Power Dissipation1.3W
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSI7911
- Pin Count8
- JESD-30 CodeS-XDSO-C6
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time20 ns
- FET Type2 P-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs51m Ω @ 5.7A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
- Rise Time35ns
- Drain to Source Voltage (Vdss)20V
- Fall Time (Typ)40 ns
- Turn-Off Delay Time70 ns
- Continuous Drain Current (ID)4.2A
- Gate to Source Voltage (Vgs)8V
- Drain-source On Resistance-Max0.051Ohm
- Drain to Source Breakdown Voltage-20V
- Pulsed Drain Current-Max (IDM)20A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI7911DN-T1-GE3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI7911DN-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI7911DN-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI7911DN-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI7911DN-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI7911DN-T1-GE3 More Descriptions
Trans MOSFET P-CH 20V 4.2A 8-Pin PowerPAK 1212 T/R
MOSFET 20V 5.7A 2.5W 51mohm @ 4.5V
DUAL P-CHANNEL 20-V (D-S) MOSFET
MOSFET 20V 5.7A 2.5W 51mohm @ 4.5V
DUAL P-CHANNEL 20-V (D-S) MOSFET
The three parts on the right have similar specifications to SI7911DN-T1-GE3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)FET TechnologyFET FeatureRadiation HardeningRoHS StatusLead FreeResistancePower DissipationCurrent - Continuous Drain (Id) @ 25°CThreshold VoltageDrain Current-Max (Abs) (ID)Nominal VgsREACH SVHCSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePower - MaxDrain to Source ResistanceRds On MaxView Compare
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SI7911DN-T1-GE3Surface MountSurface MountPowerPAK® 1212-8 Dual8SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2012e3yesObsolete1 (Unlimited)6EAR99PURE MATTE TINOther Transistors1.3WC BEND26030SI79118S-XDSO-C62DualENHANCEMENT MODEDRAIN20 ns2 P-Channel (Dual)SWITCHING51m Ω @ 5.7A, 4.5V1V @ 250μA15nC @ 4.5V35ns20V40 ns70 ns4.2A8V0.051Ohm-20V20AMETAL-OXIDE SEMICONDUCTORLogic Level GateNoROHS3 CompliantLead Free-------------- -
Surface MountSurface MountPowerPAK® SO-8 Dual8SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesObsolete1 (Unlimited)6EAR99Matte Tin (Sn)FET General Purpose Power1.4WC BEND26040SI79408R-XDSO-C62DualENHANCEMENT MODEDRAIN30 ns2 N-Channel (Dual)-17m Ω @ 11.8A, 4.5V1.5V @ 250μA17nC @ 4.5V50ns12V50 ns60 ns7.6A8V-12V-METAL-OXIDE SEMICONDUCTORLogic Level GateNoROHS3 CompliantLead Free17mOhm1.4W-----------
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Surface MountSurface MountPowerPAK® SO-8 Dual8SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2012e3yesObsolete1 (Unlimited)6EAR99Matte Tin (Sn)Other Transistors1.4WC BEND26040SI79458R-XDSO-C62DualENHANCEMENT MODEDRAIN15 ns2 P-Channel (Dual)SWITCHING20m Ω @ 10.9A, 10V3V @ 250μA74nC @ 10V15ns-15 ns130 ns10.9A20V-30V30AMETAL-OXIDE SEMICONDUCTORLogic Level GateNoROHS3 CompliantLead Free20MOhm1.4W7A-3V7A20 VUnknown------
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Surface MountSurface MountPowerPAK® 1212-8 Dual---55°C~150°C TJTape & Reel (TR)TrenchFET®2013--Obsolete1 (Unlimited)----1.3W---SI7904---Dual--15 ns2 N-Channel (Dual)-30mOhm @ 7.7A, 4.5V1V @ 935μA15nC @ 4.5V50ns20V45 ns60 ns5.3A8V-20V--Logic Level GateNoROHS3 Compliant-30mOhm-5.3A----PowerPAK® 1212-8 Dual150°C-55°C1.3W30mOhm30 mΩ
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