Vishay Siliconix SI7946DP-T1-E3
- Part Number:
- SI7946DP-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3069786-SI7946DP-T1-E3
- Description:
- MOSFET 2N-CH 150V 2.1A PPAK SO-8
- Datasheet:
- SI7946DP-T1-E3
Vishay Siliconix SI7946DP-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7946DP-T1-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8 Dual
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance150MOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- Max Power Dissipation1.4W
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberSI7946
- Pin Count8
- JESD-30 CodeR-XDSO-C6
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.4W
- Case ConnectionDRAIN
- Turn On Delay Time11 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs150m Ω @ 3.3A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Current - Continuous Drain (Id) @ 25°C2.1A
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Rise Time15ns
- Fall Time (Typ)20 ns
- Turn-Off Delay Time30 ns
- Continuous Drain Current (ID)3.3A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage150V
- Pulsed Drain Current-Max (IDM)10A
- Avalanche Energy Rating (Eas)4 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Nominal Vgs4 V
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI7946DP-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI7946DP-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI7946DP-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI7946DP-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI7946DP-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI7946DP-T1-E3 More Descriptions
Trans MOSFET N-CH 150V 2.1A 8-Pin PowerPAK SO T/R
MOSFET 2N-CH 150V 2.1A PPAK SO-8
DUAL N-CHANNEL 150-V (D-S) MOSFET
Transistor; Continuous Drain Current, Id:3300mA; Drain Source Voltage, Vds:150V; On Resistance, Rds(on):0.168ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:4V; Power Dissipation, Pd:1.4W ;RoHS Compliant: Yes
MOSFET 2N-CH 150V 2.1A PPAK SO-8
DUAL N-CHANNEL 150-V (D-S) MOSFET
Transistor; Continuous Drain Current, Id:3300mA; Drain Source Voltage, Vds:150V; On Resistance, Rds(on):0.168ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:4V; Power Dissipation, Pd:1.4W ;RoHS Compliant: Yes
The three parts on the right have similar specifications to SI7946DP-T1-E3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)FET TechnologyFET FeatureNominal VgsREACH SVHCRadiation HardeningRoHS StatusLead FreeFactory Lead TimeDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinHeightLengthWidthThreshold VoltageDrain Current-Max (Abs) (ID)View Compare
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SI7946DP-T1-E3Surface MountSurface MountPowerPAK® SO-8 Dual8SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2011e3yesObsolete1 (Unlimited)6EAR99150MOhmMatte Tin (Sn)AVALANCHE RATEDFET General Purpose Power1.4WC BEND26040SI79468R-XDSO-C62DualENHANCEMENT MODE1.4WDRAIN11 ns2 N-Channel (Dual)SWITCHING150m Ω @ 3.3A, 10V4V @ 250μA2.1A20nC @ 10V15ns20 ns30 ns3.3A20V150V10A4 mJMETAL-OXIDE SEMICONDUCTORLogic Level Gate4 VUnknownNoROHS3 CompliantLead Free---------
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Surface MountSurface MountPowerPAK® 1212-8 Dual8SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesActive1 (Unlimited)6EAR99195mOhmMatte Tin (Sn)-FET General Purpose Powers1.3WC BEND26030SI79228S-XDSO-C62DualENHANCEMENT MODE1.3WDRAIN7 ns2 N-Channel (Dual)SWITCHING195m Ω @ 2.5A, 10V3.5V @ 250μA1.8A8nC @ 10V11ns11 ns8 ns2.5A20V-10A-METAL-OXIDE SEMICONDUCTORLogic Level Gate--NoROHS3 CompliantLead Free15 Weeks100V100V1.04mm3.05mm3.05mm--
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Surface MountSurface MountPowerPAK® SO-8 Dual8SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesObsolete1 (Unlimited)6EAR9917mOhmMatte Tin (Sn)-FET General Purpose Power1.4WC BEND26040SI79408R-XDSO-C62DualENHANCEMENT MODE1.4WDRAIN30 ns2 N-Channel (Dual)-17m Ω @ 11.8A, 4.5V1.5V @ 250μA-17nC @ 4.5V50ns50 ns60 ns7.6A8V12V--METAL-OXIDE SEMICONDUCTORLogic Level Gate--NoROHS3 CompliantLead Free-12V------
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Surface MountSurface MountPowerPAK® SO-8 Dual8SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2012e3yesObsolete1 (Unlimited)6EAR9920MOhmMatte Tin (Sn)-Other Transistors1.4WC BEND26040SI79458R-XDSO-C62DualENHANCEMENT MODE1.4WDRAIN15 ns2 P-Channel (Dual)SWITCHING20m Ω @ 10.9A, 10V3V @ 250μA7A74nC @ 10V15ns15 ns130 ns10.9A20V30V30A-METAL-OXIDE SEMICONDUCTORLogic Level Gate20 VUnknownNoROHS3 CompliantLead Free-------3V7A
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