Vishay Siliconix SI7960DP-T1-GE3

Name: SI7960DP-T1-GE3
Brand: Vishay Siliconix
SKU: 3069780-SI7960DP-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI7960DP-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 3069780-SI7960DP-T1-GE3

Description:: MOSFET 2N-CH 60V 6.2A PPAK SO-8

ECAD Model:

Datasheet:: SI7960DP-T1-GE3

Specifications

Vishay Siliconix SI7960DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7960DP-T1-GE3.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Number of Pins
8
Weight
506.605978mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2015
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
21mOhm
Terminal Finish
PURE MATTE TIN
Subcategory
FET General Purpose Powers
Max Power Dissipation
1.4W
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
SI7960
Pin Count
8
JESD-30 Code
R-XDSO-C6
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.4W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
21m Ω @ 9.7A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Current - Continuous Drain (Id) @ 25°C
6.2A
Gate Charge (Qg) (Max) @ Vgs
75nC @ 10V
Rise Time
12ns
Fall Time (Typ)
12 ns
Turn-Off Delay Time
60 ns
Continuous Drain Current (ID)
9.7A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
40A
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
3 V
Height
1.04mm
Length
4.9mm
Width
5.89mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI7960DP-T1-GE3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI7960DP-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI7960DP-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

SI7960DP-T1-GE3 More Descriptions

Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R
DUAL N-CHANNEL 60-V (D-S) MOSFET
MOSFET 2N-CH 60V 6.2A PPAK SO-8
MOSFET Dual N-Ch 60V 21mohm @ 10V
DUAL N CHANNEL MOSFET, 60V, 9.7A; Transi; DUAL N CHANNEL MOSFET, 60V, 9.7A; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:6.2A; Drain Source Voltage Vds, N Channel:60V; On Resistance Rds(on), N Channel:0.017ohm; Rds(on) Test Voltage Vgs:10V

Product Comparison

The three parts on the right have similar specifications to SI7960DP-T1-GE3.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

FET Technology

FET Feature

Nominal Vgs

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Transistor Application

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

Additional Feature

Avalanche Energy Rating (Eas)

REACH SVHC

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Power - Max

Drain to Source Resistance

Rds On Max

View Compare
SI7960DP-T1-GE3

Vishay Siliconix

Surface Mount

Surface Mount

PowerPAK® SO-8 Dual

8

506.605978mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2015

e3

yes

Obsolete

1 (Unlimited)

6

EAR99

21mOhm

PURE MATTE TIN

FET General Purpose Powers

1.4W

C BEND

260

30

SI7960

8

R-XDSO-C6

2

2

Dual

ENHANCEMENT MODE

1.4W

DRAIN

12 ns

2 N-Channel (Dual)

21m Ω @ 9.7A, 10V

3V @ 250μA

6.2A

75nC @ 10V

12ns

12 ns

60 ns

9.7A

20V

60V

40A

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

3 V

1.04mm

4.9mm

5.89mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
SI7911DN-T1-GE3

Vishay Siliconix

Surface Mount

Surface Mount

PowerPAK® 1212-8 Dual

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2012

e3

yes

Obsolete

1 (Unlimited)

6

EAR99

-

PURE MATTE TIN

Other Transistors

1.3W

C BEND

260

30

SI7911

8

S-XDSO-C6

2

-

Dual

ENHANCEMENT MODE

-

DRAIN

20 ns

2 P-Channel (Dual)

51m Ω @ 5.7A, 4.5V

1V @ 250μA

-

15nC @ 4.5V

35ns

40 ns

70 ns

4.2A

8V

-20V

20A

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-

-

-

-

No

ROHS3 Compliant

Lead Free

SWITCHING

20V

0.051Ohm

-

-

-

-

-

-

-

-

-

SI7960DP-T1-GE3 vs SI7911DN-T1-GE3
SI7946DP-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

PowerPAK® SO-8 Dual

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2011

e3

yes

Obsolete

1 (Unlimited)

6

EAR99

150MOhm

Matte Tin (Sn)

FET General Purpose Power

1.4W

C BEND

260

40

SI7946

8

R-XDSO-C6

2

-

Dual

ENHANCEMENT MODE

1.4W

DRAIN

11 ns

2 N-Channel (Dual)

150m Ω @ 3.3A, 10V

4V @ 250μA

2.1A

20nC @ 10V

15ns

20 ns

30 ns

3.3A

20V

150V

10A

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

4 V

-

-

-

No

ROHS3 Compliant

Lead Free

SWITCHING

-

-

AVALANCHE RATED

4 mJ

Unknown

-

-

-

-

-

-

SI7960DP-T1-GE3 vs SI7946DP-T1-E3
SI7904DN-T1-GE3

Vishay Siliconix

Surface Mount

Surface Mount

PowerPAK® 1212-8 Dual

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

-

-

Obsolete

1 (Unlimited)

-

-

30mOhm

-

-

1.3W

-

-

-

SI7904

-

-

-

-

Dual

-

-

-

15 ns

2 N-Channel (Dual)

30mOhm @ 7.7A, 4.5V

1V @ 935μA

5.3A

15nC @ 4.5V

50ns

45 ns

60 ns

5.3A

8V

20V

-

-

Logic Level Gate

-

-

-

-

No

ROHS3 Compliant

-

-

20V

-

-

-

-

PowerPAK® 1212-8 Dual

150°C

-55°C

1.3W

30mOhm

30 mΩ

SI7960DP-T1-GE3 vs SI7904DN-T1-GE3