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SI7945DP-T1-GE3

Vishay Siliconix SI7945DP-T1-GE3

Part Number:
SI7945DP-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
3069811-SI7945DP-T1-GE3
Description:
MOSFET 2P-CH 30V 7A PPAK SO-8
ECAD Model:
Datasheet:
SI7945DP-T1-GE3

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Specifications
Vishay Siliconix SI7945DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7945DP-T1-GE3.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8 Dual
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2012
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    20MOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1.4W
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    SI7945
  • Pin Count
    8
  • JESD-30 Code
    R-XDSO-C6
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.4W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    15 ns
  • FET Type
    2 P-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    20m Ω @ 10.9A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    7A
  • Gate Charge (Qg) (Max) @ Vgs
    74nC @ 10V
  • Rise Time
    15ns
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    130 ns
  • Continuous Drain Current (ID)
    10.9A
  • Threshold Voltage
    -3V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    7A
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    30A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    20 V
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI7945DP-T1-GE3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI7945DP-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI7945DP-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI7945DP-T1-GE3 More Descriptions
Trans MOSFET P-CH 30V 7A 8-Pin PowerPAK SO T/R
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:10.9A; On Resistance, Rds(on):0.031ohm; Rds(on) Test Voltage, Vgs:4.5V ;RoHS Compliant: Yes
MOSFET, PP CH, 30V, 7A, PPAK SO8; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:20V; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-7A; Drain Source Voltage Vds:-30V; Module Configuration:Dual; On Resistance Rds(on):16mohm; Power Dissipation Pd:1.4W
Product Comparison
The three parts on the right have similar specifications to SI7945DP-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    FET Technology
    FET Feature
    Nominal Vgs
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    Additional Feature
    Avalanche Energy Rating (Eas)
    Weight
    Number of Channels
    Height
    Length
    Width
    View Compare
  • SI7945DP-T1-GE3
    SI7945DP-T1-GE3
    Vishay Siliconix
    Surface Mount
    Surface Mount
    PowerPAK® SO-8 Dual
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2012
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    20MOhm
    Matte Tin (Sn)
    Other Transistors
    1.4W
    C BEND
    260
    40
    SI7945
    8
    R-XDSO-C6
    2
    Dual
    ENHANCEMENT MODE
    1.4W
    DRAIN
    15 ns
    2 P-Channel (Dual)
    SWITCHING
    20m Ω @ 10.9A, 10V
    3V @ 250μA
    7A
    74nC @ 10V
    15ns
    15 ns
    130 ns
    10.9A
    -3V
    20V
    7A
    30V
    30A
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    20 V
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7940DP-T1-E3
    SI7940DP-T1-E3
    Vishay Siliconix
    Surface Mount
    Surface Mount
    PowerPAK® SO-8 Dual
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    17mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    1.4W
    C BEND
    260
    40
    SI7940
    8
    R-XDSO-C6
    2
    Dual
    ENHANCEMENT MODE
    1.4W
    DRAIN
    30 ns
    2 N-Channel (Dual)
    -
    17m Ω @ 11.8A, 4.5V
    1.5V @ 250μA
    -
    17nC @ 4.5V
    50ns
    50 ns
    60 ns
    7.6A
    -
    8V
    -
    12V
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    12V
    -
    -
    -
    -
    -
    -
    -
    SI7945DP-T1-GE3 vs SI7940DP-T1-E3
  • SI7946DP-T1-E3
    SI7946DP-T1-E3
    Vishay Siliconix
    Surface Mount
    Surface Mount
    PowerPAK® SO-8 Dual
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2011
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    150MOhm
    Matte Tin (Sn)
    FET General Purpose Power
    1.4W
    C BEND
    260
    40
    SI7946
    8
    R-XDSO-C6
    2
    Dual
    ENHANCEMENT MODE
    1.4W
    DRAIN
    11 ns
    2 N-Channel (Dual)
    SWITCHING
    150m Ω @ 3.3A, 10V
    4V @ 250μA
    2.1A
    20nC @ 10V
    15ns
    20 ns
    30 ns
    3.3A
    -
    20V
    -
    150V
    10A
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    4 V
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    AVALANCHE RATED
    4 mJ
    -
    -
    -
    -
    -
    SI7945DP-T1-GE3 vs SI7946DP-T1-E3
  • SI7960DP-T1-GE3
    SI7960DP-T1-GE3
    Vishay Siliconix
    Surface Mount
    Surface Mount
    PowerPAK® SO-8 Dual
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2015
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    21mOhm
    PURE MATTE TIN
    FET General Purpose Powers
    1.4W
    C BEND
    260
    30
    SI7960
    8
    R-XDSO-C6
    2
    Dual
    ENHANCEMENT MODE
    1.4W
    DRAIN
    12 ns
    2 N-Channel (Dual)
    -
    21m Ω @ 9.7A, 10V
    3V @ 250μA
    6.2A
    75nC @ 10V
    12ns
    12 ns
    60 ns
    9.7A
    -
    20V
    -
    60V
    40A
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    3 V
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    506.605978mg
    2
    1.04mm
    4.9mm
    5.89mm
    SI7945DP-T1-GE3 vs SI7960DP-T1-GE3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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