Vishay Siliconix SI4900DY-T1-E3
- Part Number:
- SI4900DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3813587-SI4900DY-T1-E3
- Description:
- MOSFET 2N-CH 60V 5.3A 8-SOIC
- ECAD Model:
-
- Datasheet:
- SI4900DY-T1-E3
Vishay Siliconix SI4900DY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4900DY-T1-E3.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight186.993455mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance58mOhm
- Max Power Dissipation2W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberSI4900
- Pin Count8
- Number of Elements2
- Number of Channels2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time10 ns
- Power - Max3.1W
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs58m Ω @ 4.3A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds665pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Rise Time15ns
- Drain to Source Voltage (Vdss)60V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)5.3A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height1.55mm
- Length5mm
- Width4mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI4900DY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4900DY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4900DY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4900DY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4900DY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI4900DY-T1-E3 More Descriptions
Transistor MOSFET Array Dual N-CH 60V 5.3A 8-Pin SOIC T/R
Dual N-Channel 60 V 0.058 Ohm Surface Mount TrenchFET Power Mosfet - SOIC-8
Transistor; Continuous Drain Current, Id:5300mA; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.072ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:2W ;RoHS Compliant: Yes
Dual N-Channel 60 V 0.058 Ohm Surface Mount TrenchFET Power Mosfet - SOIC-8
Transistor; Continuous Drain Current, Id:5300mA; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.072ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:2W ;RoHS Compliant: Yes
The three parts on the right have similar specifications to SI4900DY-T1-E3.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsNumber of ChannelsElement ConfigurationOperating ModePower DissipationTurn On Delay TimePower - MaxFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET TechnologyFET FeatureHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureCurrent - Continuous Drain (Id) @ 25°CDrain to Source ResistanceRds On MaxPbfree CodeTerminal FinishSubcategoryThreshold VoltageDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxREACH SVHCView Compare
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SI4900DY-T1-E314 WeeksTinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2011e3Active1 (Unlimited)8EAR9958mOhm2WGULL WING26040SI4900822DualENHANCEMENT MODE2W10 ns3.1W2 N-Channel (Dual)SWITCHING58m Ω @ 4.3A, 10V3V @ 250μA665pF @ 15V20nC @ 10V15ns60V10 ns20 ns5.3A20V60VMETAL-OXIDE SEMICONDUCTORLogic Level Gate1.55mm5mm4mmNoROHS3 CompliantLead Free-------------- -
--Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mg--55°C~150°C TJTape & Reel (TR)TrenchFET®2016-Obsolete1 (Unlimited)---2W---SI4941--2---5.5 μs3.6W2 P-Channel (Dual)-21mOhm @ 8.3A, 10V2.8V @ 250μA-70nC @ 10V11μs30V24 μs30 μs10A20V--Logic Level Gate1.55mm5mm4mm-ROHS3 Compliant-8-SO150°C-55°C10A21mOhm21 mΩ-------
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14 Weeks-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3Active1 (Unlimited)8EAR99-1.1WGULL WING26030SI4925822DualENHANCEMENT MODE-9 ns-2 P-Channel (Dual)SWITCHING25m Ω @ 7.1A, 10V3V @ 250μA-50nC @ 10V12ns30V12 ns60 ns-5.3A20V-30VMETAL-OXIDE SEMICONDUCTORLogic Level Gate---NoROHS3 Compliant----5.3A--yesPURE MATTE TINOther Transistors----
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--Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2015e3Obsolete1 (Unlimited)8EAR99-1.1WGULL WING26030SI491382-DualENHANCEMENT MODE1.1W32 ns-2 P-Channel (Dual)SWITCHING15m Ω @ 9.4A, 4.5V1V @ 500μA-65nC @ 4.5V42ns20V160 ns350 ns9.4A8V-20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate---NoROHS3 Compliant----7.1A--yesPURE MATTE TINOther Transistors-1V7.1A0.015OhmUnknown
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