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SI7901EDN-T1-E3

Vishay Siliconix SI7901EDN-T1-E3

Part Number:
SI7901EDN-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
3069834-SI7901EDN-T1-E3
Description:
MOSFET 2P-CH 20V 4.3A 1212-8
ECAD Model:
Datasheet:
SI7901EDN-T1-E3

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Specifications
Vishay Siliconix SI7901EDN-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7901EDN-T1-E3.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® 1212-8 Dual
  • Number of Pins
    8
  • Supplier Device Package
    PowerPAK® 1212-8 Dual
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation
    1.3W
  • Number of Channels
    2
  • Element Configuration
    Dual
  • Turn On Delay Time
    2.5 μs
  • Power - Max
    1.3W
  • FET Type
    2 P-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    48mOhm @ 6.3A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 800μA
  • Current - Continuous Drain (Id) @ 25°C
    4.3A
  • Gate Charge (Qg) (Max) @ Vgs
    18nC @ 4.5V
  • Rise Time
    4μs
  • Drain to Source Voltage (Vdss)
    20V
  • Fall Time (Typ)
    4 μs
  • Turn-Off Delay Time
    15 μs
  • Continuous Drain Current (ID)
    4.3A
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    -20V
  • FET Feature
    Logic Level Gate
  • Drain to Source Resistance
    48mOhm
  • Rds On Max
    48 mΩ
  • Height
    1.04mm
  • Length
    3.05mm
  • Width
    3.05mm
  • RoHS Status
    ROHS3 Compliant
Description
SI7901EDN-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI7901EDN-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI7901EDN-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI7901EDN-T1-E3 More Descriptions
DUAL P-CHANNEL 20-V (D-S) MOSFET
MOSFET 2P-CH 20V 4.3A 1212-8
MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V
OEMs, CMs ONLY (NO BROKERS)
Product Comparison
The three parts on the right have similar specifications to SI7901EDN-T1-E3.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Number of Channels
    Element Configuration
    Turn On Delay Time
    Power - Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    FET Feature
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Operating Mode
    Power Dissipation
    Case Connection
    FET Technology
    Radiation Hardening
    Lead Free
    Transistor Application
    Threshold Voltage
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    REACH SVHC
    View Compare
  • SI7901EDN-T1-E3
    SI7901EDN-T1-E3
    Vishay Siliconix
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8 Dual
    8
    PowerPAK® 1212-8 Dual
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    1.3W
    2
    Dual
    2.5 μs
    1.3W
    2 P-Channel (Dual)
    48mOhm @ 6.3A, 4.5V
    1V @ 800μA
    4.3A
    18nC @ 4.5V
    4μs
    20V
    4 μs
    15 μs
    4.3A
    12V
    -20V
    Logic Level Gate
    48mOhm
    48 mΩ
    1.04mm
    3.05mm
    3.05mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7940DP-T1-E3
    SI7940DP-T1-E3
    Vishay Siliconix
    Surface Mount
    Surface Mount
    PowerPAK® SO-8 Dual
    8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    1.4W
    -
    Dual
    30 ns
    -
    2 N-Channel (Dual)
    17m Ω @ 11.8A, 4.5V
    1.5V @ 250μA
    -
    17nC @ 4.5V
    50ns
    12V
    50 ns
    60 ns
    7.6A
    8V
    12V
    Logic Level Gate
    -
    -
    -
    -
    -
    ROHS3 Compliant
    SILICON
    e3
    yes
    6
    EAR99
    17mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    C BEND
    260
    40
    SI7940
    8
    R-XDSO-C6
    2
    ENHANCEMENT MODE
    1.4W
    DRAIN
    METAL-OXIDE SEMICONDUCTOR
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    SI7901EDN-T1-E3 vs SI7940DP-T1-E3
  • SI7945DP-T1-GE3
    SI7945DP-T1-GE3
    Vishay Siliconix
    Surface Mount
    Surface Mount
    PowerPAK® SO-8 Dual
    8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2012
    Obsolete
    1 (Unlimited)
    -
    -
    1.4W
    -
    Dual
    15 ns
    -
    2 P-Channel (Dual)
    20m Ω @ 10.9A, 10V
    3V @ 250μA
    7A
    74nC @ 10V
    15ns
    -
    15 ns
    130 ns
    10.9A
    20V
    30V
    Logic Level Gate
    -
    -
    -
    -
    -
    ROHS3 Compliant
    SILICON
    e3
    yes
    6
    EAR99
    20MOhm
    Matte Tin (Sn)
    Other Transistors
    C BEND
    260
    40
    SI7945
    8
    R-XDSO-C6
    2
    ENHANCEMENT MODE
    1.4W
    DRAIN
    METAL-OXIDE SEMICONDUCTOR
    No
    Lead Free
    SWITCHING
    -3V
    7A
    30A
    20 V
    Unknown
    SI7901EDN-T1-E3 vs SI7945DP-T1-GE3
  • SI7904DN-T1-GE3
    SI7904DN-T1-GE3
    Vishay Siliconix
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8 Dual
    -
    PowerPAK® 1212-8 Dual
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    1.3W
    -
    Dual
    15 ns
    1.3W
    2 N-Channel (Dual)
    30mOhm @ 7.7A, 4.5V
    1V @ 935μA
    5.3A
    15nC @ 4.5V
    50ns
    20V
    45 ns
    60 ns
    5.3A
    8V
    20V
    Logic Level Gate
    30mOhm
    30 mΩ
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    30mOhm
    -
    -
    -
    -
    -
    SI7904
    -
    -
    -
    -
    -
    -
    -
    No
    -
    -
    -
    -
    -
    -
    -
    SI7901EDN-T1-E3 vs SI7904DN-T1-GE3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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