Vishay Siliconix SI7901EDN-T1-E3
- Part Number:
- SI7901EDN-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3069834-SI7901EDN-T1-E3
- Description:
- MOSFET 2P-CH 20V 4.3A 1212-8
- Datasheet:
- SI7901EDN-T1-E3
Vishay Siliconix SI7901EDN-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7901EDN-T1-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® 1212-8 Dual
- Number of Pins8
- Supplier Device PackagePowerPAK® 1212-8 Dual
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation1.3W
- Number of Channels2
- Element ConfigurationDual
- Turn On Delay Time2.5 μs
- Power - Max1.3W
- FET Type2 P-Channel (Dual)
- Rds On (Max) @ Id, Vgs48mOhm @ 6.3A, 4.5V
- Vgs(th) (Max) @ Id1V @ 800μA
- Current - Continuous Drain (Id) @ 25°C4.3A
- Gate Charge (Qg) (Max) @ Vgs18nC @ 4.5V
- Rise Time4μs
- Drain to Source Voltage (Vdss)20V
- Fall Time (Typ)4 μs
- Turn-Off Delay Time15 μs
- Continuous Drain Current (ID)4.3A
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage-20V
- FET FeatureLogic Level Gate
- Drain to Source Resistance48mOhm
- Rds On Max48 mΩ
- Height1.04mm
- Length3.05mm
- Width3.05mm
- RoHS StatusROHS3 Compliant
SI7901EDN-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI7901EDN-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI7901EDN-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI7901EDN-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI7901EDN-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI7901EDN-T1-E3 More Descriptions
DUAL P-CHANNEL 20-V (D-S) MOSFET
MOSFET 2P-CH 20V 4.3A 1212-8
MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V
OEMs, CMs ONLY (NO BROKERS)
MOSFET 2P-CH 20V 4.3A 1212-8
MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to SI7901EDN-T1-E3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationNumber of ChannelsElement ConfigurationTurn On Delay TimePower - MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET FeatureDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsOperating ModePower DissipationCase ConnectionFET TechnologyRadiation HardeningLead FreeTransistor ApplicationThreshold VoltageDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)Nominal VgsREACH SVHCView Compare
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SI7901EDN-T1-E3Surface MountSurface MountPowerPAK® 1212-8 Dual8PowerPAK® 1212-8 Dual-55°C~150°C TJTape & Reel (TR)TrenchFET®2016Obsolete1 (Unlimited)150°C-55°C1.3W2Dual2.5 μs1.3W2 P-Channel (Dual)48mOhm @ 6.3A, 4.5V1V @ 800μA4.3A18nC @ 4.5V4μs20V4 μs15 μs4.3A12V-20VLogic Level Gate48mOhm48 mΩ1.04mm3.05mm3.05mmROHS3 Compliant----------------------------
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Surface MountSurface MountPowerPAK® SO-8 Dual8--55°C~150°C TJTape & Reel (TR)TrenchFET®2016Obsolete1 (Unlimited)--1.4W-Dual30 ns-2 N-Channel (Dual)17m Ω @ 11.8A, 4.5V1.5V @ 250μA-17nC @ 4.5V50ns12V50 ns60 ns7.6A8V12VLogic Level Gate-----ROHS3 CompliantSILICONe3yes6EAR9917mOhmMatte Tin (Sn)FET General Purpose PowerC BEND26040SI79408R-XDSO-C62ENHANCEMENT MODE1.4WDRAINMETAL-OXIDE SEMICONDUCTORNoLead Free------
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Surface MountSurface MountPowerPAK® SO-8 Dual8--55°C~150°C TJTape & Reel (TR)TrenchFET®2012Obsolete1 (Unlimited)--1.4W-Dual15 ns-2 P-Channel (Dual)20m Ω @ 10.9A, 10V3V @ 250μA7A74nC @ 10V15ns-15 ns130 ns10.9A20V30VLogic Level Gate-----ROHS3 CompliantSILICONe3yes6EAR9920MOhmMatte Tin (Sn)Other TransistorsC BEND26040SI79458R-XDSO-C62ENHANCEMENT MODE1.4WDRAINMETAL-OXIDE SEMICONDUCTORNoLead FreeSWITCHING-3V7A30A20 VUnknown
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Surface MountSurface MountPowerPAK® 1212-8 Dual-PowerPAK® 1212-8 Dual-55°C~150°C TJTape & Reel (TR)TrenchFET®2013Obsolete1 (Unlimited)150°C-55°C1.3W-Dual15 ns1.3W2 N-Channel (Dual)30mOhm @ 7.7A, 4.5V1V @ 935μA5.3A15nC @ 4.5V50ns20V45 ns60 ns5.3A8V20VLogic Level Gate30mOhm30 mΩ---ROHS3 Compliant-----30mOhm-----SI7904-------No-------
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