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SI7942DP-T1-E3

Vishay Siliconix SI7942DP-T1-E3

Part Number:
SI7942DP-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
3585715-SI7942DP-T1-E3
Description:
MOSFET 2N-CH 100V 3.8A PPAK SO-8
ECAD Model:
Datasheet:
SI7942DP-T1-E3

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Specifications
Vishay Siliconix SI7942DP-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7942DP-T1-E3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8 Dual
  • Number of Pins
    8
  • Weight
    506.605978mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2015
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    49mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Powers
  • Max Power Dissipation
    1.4W
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    SI7942
  • Pin Count
    8
  • JESD-30 Code
    R-XDSO-C6
  • Number of Elements
    2
  • Number of Channels
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.4W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    15 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    49m Ω @ 5.9A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    3.8A
  • Gate Charge (Qg) (Max) @ Vgs
    24nC @ 10V
  • Rise Time
    15ns
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    5.9A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Dual Supply Voltage
    100V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    4 V
  • Height
    1.04mm
  • Length
    4.9mm
  • Width
    5.89mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI7942DP-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI7942DP-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI7942DP-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI7942DP-T1-E3 More Descriptions
Dual N-Channel 100 V 0.049 Ohms Surface Mount Power Mosfet - PowerPAK SO-8
Transistor MOSFET Array Dual N-CH 100V 3.8A 8-Pin PowerPAK SO T/R
MOSFET, DUAL N-CH, 100V, 3.8A, 150DEG C;; C; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V;
MOSFET, DUAL, NN, SO-8; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:100V; Current, Id Cont:5.9A; On State Resistance:0.049ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:SO-8; Termination Type:SMD; Operating Temperature Range:-55°C to 150°C; Max Junction Temperature, Tj:150°C; Power Dissipation Pd:1.4W; Rise Time:15ns; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
Product Comparison
The three parts on the right have similar specifications to SI7942DP-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    FET Technology
    FET Feature
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Threshold Voltage
    Drain Current-Max (Abs) (ID)
    View Compare
  • SI7942DP-T1-E3
    SI7942DP-T1-E3
    Vishay Siliconix
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8 Dual
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2015
    e3
    yes
    Active
    1 (Unlimited)
    6
    SMD/SMT
    EAR99
    49mOhm
    Matte Tin (Sn)
    FET General Purpose Powers
    1.4W
    C BEND
    260
    40
    SI7942
    8
    R-XDSO-C6
    2
    2
    Dual
    ENHANCEMENT MODE
    1.4W
    DRAIN
    15 ns
    2 N-Channel (Dual)
    SWITCHING
    49m Ω @ 5.9A, 10V
    4V @ 250μA
    3.8A
    24nC @ 10V
    15ns
    20 ns
    35 ns
    5.9A
    20V
    100V
    100V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    4 V
    1.04mm
    4.9mm
    5.89mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • SI7911DN-T1-GE3
    SI7911DN-T1-GE3
    Vishay Siliconix
    -
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8 Dual
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2012
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    -
    EAR99
    -
    PURE MATTE TIN
    Other Transistors
    1.3W
    C BEND
    260
    30
    SI7911
    8
    S-XDSO-C6
    2
    -
    Dual
    ENHANCEMENT MODE
    -
    DRAIN
    20 ns
    2 P-Channel (Dual)
    SWITCHING
    51m Ω @ 5.7A, 4.5V
    1V @ 250μA
    -
    15nC @ 4.5V
    35ns
    40 ns
    70 ns
    4.2A
    8V
    -20V
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    20V
    0.051Ohm
    20A
    -
    -
    SI7942DP-T1-E3 vs SI7911DN-T1-GE3
  • SI7945DP-T1-GE3
    SI7945DP-T1-GE3
    Vishay Siliconix
    -
    Surface Mount
    Surface Mount
    PowerPAK® SO-8 Dual
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2012
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    -
    EAR99
    20MOhm
    Matte Tin (Sn)
    Other Transistors
    1.4W
    C BEND
    260
    40
    SI7945
    8
    R-XDSO-C6
    2
    -
    Dual
    ENHANCEMENT MODE
    1.4W
    DRAIN
    15 ns
    2 P-Channel (Dual)
    SWITCHING
    20m Ω @ 10.9A, 10V
    3V @ 250μA
    7A
    74nC @ 10V
    15ns
    15 ns
    130 ns
    10.9A
    20V
    30V
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    20 V
    -
    -
    -
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    30A
    -3V
    7A
    SI7942DP-T1-E3 vs SI7945DP-T1-GE3
  • SI7960DP-T1-GE3
    SI7960DP-T1-GE3
    Vishay Siliconix
    -
    Surface Mount
    Surface Mount
    PowerPAK® SO-8 Dual
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2015
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    -
    EAR99
    21mOhm
    PURE MATTE TIN
    FET General Purpose Powers
    1.4W
    C BEND
    260
    30
    SI7960
    8
    R-XDSO-C6
    2
    2
    Dual
    ENHANCEMENT MODE
    1.4W
    DRAIN
    12 ns
    2 N-Channel (Dual)
    -
    21m Ω @ 9.7A, 10V
    3V @ 250μA
    6.2A
    75nC @ 10V
    12ns
    12 ns
    60 ns
    9.7A
    20V
    60V
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    3 V
    1.04mm
    4.9mm
    5.89mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    40A
    -
    -
    SI7942DP-T1-E3 vs SI7960DP-T1-GE3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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