Rohm Semiconductor EM6K7T2R

Name: EM6K7T2R
Brand: Rohm Semiconductor
SKU: 4538837-EM6K7T2R
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: EM6K7T2R

Manufacturer:: Rohm Semiconductor

Ventron No:: 4538837-EM6K7T2R

Description:: MOSFET 2N-CH 20V 0.2A EMT6

ECAD Model:

Datasheet:: EM6K7T2R

Specifications

Rohm Semiconductor EM6K7T2R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor EM6K7T2R.

Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Digi-Reel®
Published
2009
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Max Power Dissipation
150mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
10
Base Part Number
*K7
Pin Count
6
Number of Elements
2
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Turn On Delay Time
5 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.2 Ω @ 200mA, 2.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
25pF @ 10V
Rise Time
10ns
Drain to Source Voltage (Vdss)
20V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
15 ns
Continuous Drain Current (ID)
200mA
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
0.2A
Drain-source On Resistance-Max
1.4Ohm
DS Breakdown Voltage-Min
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

EM6K7T2R Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet EM6K7T2R or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EM6K7T2R. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

EM6K7T2R More Descriptions

Transistor MOSFET Array Dual N-CH 20V 200mA 6-Pin SOT-563 Emboss T/R
Trans MOSFET N-CH Si 20V 0.2A 6-Pin EMT T/R / MOSFET 2N-CH 20V 0.2A EMT6
EM6K7 Series 20 V 1.2 Ohm Surface Mount Dual N-Channel Mosfet - EMT-6
20V 200mA 1.2Ω@2.5V,200mA 150mW 2 N-Channel SOT-563 MOSFETs ROHS
N N CHAN.-FET ESD 0,2A 20V EMT6

Product Comparison

The three parts on the right have similar specifications to EM6K7T2R.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Configuration

Operating Mode

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

FET Technology

FET Feature

Radiation Hardening

RoHS Status

Lead Free

JESD-609 Code

Terminal Finish

Number of Channels

Power - Max

Drain to Source Breakdown Voltage

Element Configuration

Power Dissipation

View Compare
EM6K7T2R

Rohm Semiconductor

16 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

6

SILICON

150°C TJ

Digi-Reel®

2009

yes

Active

1 (Unlimited)

6

EAR99

FET General Purpose Power

150mW

FLAT

260

10

*K7

6

2

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ENHANCEMENT MODE

5 ns

2 N-Channel (Dual)

SWITCHING

1.2 Ω @ 200mA, 2.5V

1V @ 1mA

25pF @ 10V

10ns

20V

10 ns

15 ns

200mA

8V

0.2A

1.4Ohm

20V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
EM6K31T2R

Rohm Semiconductor

16 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

6

SILICON

150°C TJ

Tape & Reel (TR)

2010

yes

Active

1 (Unlimited)

6

EAR99

FET General Purpose Power

120mW

FLAT

260

10

*K31

6

2

-

ENHANCEMENT MODE

3.5 ns

2 N-Channel (Dual)

SWITCHING

2.4 Ω @ 250mA, 10V

2.3V @ 1mA

15pF @ 25V

5ns

60V

28 ns

18 ns

250mA

20V

-

-

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

No

ROHS3 Compliant

Lead Free

e2

Tin/Copper (Sn/Cu)

2

150mW

60V

-

-

EM6K7T2R vs EM6K31T2R
EM6K6T2R

Rohm Semiconductor

16 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

6

SILICON

150°C TJ

Tape & Reel (TR)

2007

yes

Active

1 (Unlimited)

6

EAR99

FET General Purpose Power

150mW

FLAT

260

10

*K6

6

2

-

ENHANCEMENT MODE

5 ns

2 N-Channel (Dual)

SWITCHING

1 Ω @ 300mA, 4V

1V @ 1mA

25pF @ 10V

10ns

20V

10 ns

15 ns

300mA

8V

0.3A

1.4Ohm

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

No

ROHS3 Compliant

Lead Free

e2

TIN COPPER

-

-

20V

Dual

150mW

EM6K7T2R vs EM6K6T2R
EM6K34T2CR

Rohm Semiconductor

16 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

-

-

150°C TJ

Cut Tape (CT)

-

yes

Active

1 (Unlimited)

-

-

-

120mW

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

-

-

-

2 N-Channel (Dual)

-

2.2 Ω @ 200mA, 4.5V

800mV @ 1mA

26pF @ 10V

-

50V

-

-

200mA

-

-

-

-

-

Logic Level Gate, 0.9V Drive

-

ROHS3 Compliant

Lead Free

-

-

-

120mW

-

-

-

EM6K7T2R vs EM6K34T2CR