Vishay Siliconix SI7922DN-T1-GE3
- Part Number:
- SI7922DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3585685-SI7922DN-T1-GE3
- Description:
- MOSFET 2N-CH 100V 1.8A 1212-8
- ECAD Model:
-
- Datasheet:
- SI7922DN-T1-GE3
Vishay Siliconix SI7922DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7922DN-T1-GE3.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® 1212-8 Dual
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2016
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance195mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- Max Power Dissipation1.3W
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSI7922
- Pin Count8
- JESD-30 CodeS-XDSO-C6
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.3W
- Case ConnectionDRAIN
- Turn On Delay Time7 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs195m Ω @ 2.5A, 10V
- Vgs(th) (Max) @ Id3.5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C1.8A
- Gate Charge (Qg) (Max) @ Vgs8nC @ 10V
- Rise Time11ns
- Drain to Source Voltage (Vdss)100V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time8 ns
- Continuous Drain Current (ID)2.5A
- Gate to Source Voltage (Vgs)20V
- Pulsed Drain Current-Max (IDM)10A
- DS Breakdown Voltage-Min100V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height1.04mm
- Length3.05mm
- Width3.05mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI7922DN-T1-GE3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI7922DN-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI7922DN-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI7922DN-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI7922DN-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI7922DN-T1-GE3 More Descriptions
Dual N-Channel 100 V 0.195 Ohm Surface Mount Power MosFet - PowerPAK-1212-8
Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R / MOSFET 2N-CH 100V 1.8A 1212-8
Transistor; Continuous Drain Current, Id:2500mA; Drain Source Voltage, Vds:100V; On Resistance, Rds(on):0.230ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3.5V; Power Dissipation, Pd:1.3W ;RoHS Compliant: Yes
Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R / MOSFET 2N-CH 100V 1.8A 1212-8
Transistor; Continuous Drain Current, Id:2500mA; Drain Source Voltage, Vds:100V; On Resistance, Rds(on):0.230ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3.5V; Power Dissipation, Pd:1.3W ;RoHS Compliant: Yes
The three parts on the right have similar specifications to SI7922DN-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinFET TechnologyFET FeatureHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureNumber of ChannelsPower - MaxDrain to Source Breakdown VoltageDrain to Source ResistanceRds On MaxWeightNominal VgsView Compare
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SI7922DN-T1-GE315 WeeksSurface MountSurface MountPowerPAK® 1212-8 Dual8SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesActive1 (Unlimited)6EAR99195mOhmMatte Tin (Sn)FET General Purpose Powers1.3WC BEND26030SI79228S-XDSO-C62DualENHANCEMENT MODE1.3WDRAIN7 ns2 N-Channel (Dual)SWITCHING195m Ω @ 2.5A, 10V3.5V @ 250μA1.8A8nC @ 10V11ns100V11 ns8 ns2.5A20V10A100VMETAL-OXIDE SEMICONDUCTORLogic Level Gate1.04mm3.05mm3.05mmNoROHS3 CompliantLead Free----------- -
-Surface MountSurface MountPowerPAK® 1212-8 Dual8--55°C~150°C TJTape & Reel (TR)TrenchFET®2016--Obsolete1 (Unlimited)-----1.3W-------Dual---2.5 μs2 P-Channel (Dual)-48mOhm @ 6.3A, 4.5V1V @ 800μA4.3A18nC @ 4.5V4μs20V4 μs15 μs4.3A12V---Logic Level Gate1.04mm3.05mm3.05mm-ROHS3 Compliant-PowerPAK® 1212-8 Dual150°C-55°C21.3W-20V48mOhm48 mΩ--
-
-Surface MountSurface MountPowerPAK® SO-8 Dual8SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2015e3yesObsolete1 (Unlimited)6EAR9921mOhmPURE MATTE TINFET General Purpose Powers1.4WC BEND26030SI79608R-XDSO-C62DualENHANCEMENT MODE1.4WDRAIN12 ns2 N-Channel (Dual)-21m Ω @ 9.7A, 10V3V @ 250μA6.2A75nC @ 10V12ns-12 ns60 ns9.7A20V40A-METAL-OXIDE SEMICONDUCTORLogic Level Gate1.04mm4.9mm5.89mmNoROHS3 CompliantLead Free---2-60V--506.605978mg3 V
-
-Surface MountSurface MountPowerPAK® 1212-8 Dual---55°C~150°C TJTape & Reel (TR)TrenchFET®2013--Obsolete1 (Unlimited)--30mOhm--1.3W---SI7904---Dual---15 ns2 N-Channel (Dual)-30mOhm @ 7.7A, 4.5V1V @ 935μA5.3A15nC @ 4.5V50ns20V45 ns60 ns5.3A8V---Logic Level Gate---NoROHS3 Compliant-PowerPAK® 1212-8 Dual150°C-55°C-1.3W20V30mOhm30 mΩ--
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