Vishay Siliconix SI7904DN-T1-GE3
- Part Number:
- SI7904DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2848156-SI7904DN-T1-GE3
- Description:
- MOSFET 2N-CH 20V 5.3A 1212-8
- ECAD Model:
-
- Datasheet:
- SI7904DN-T1-GE3
Vishay Siliconix SI7904DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7904DN-T1-GE3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® 1212-8 Dual
- Supplier Device PackagePowerPAK® 1212-8 Dual
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2013
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance30mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation1.3W
- Base Part NumberSI7904
- Element ConfigurationDual
- Turn On Delay Time15 ns
- Power - Max1.3W
- FET Type2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs30mOhm @ 7.7A, 4.5V
- Vgs(th) (Max) @ Id1V @ 935μA
- Current - Continuous Drain (Id) @ 25°C5.3A
- Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
- Rise Time50ns
- Drain to Source Voltage (Vdss)20V
- Fall Time (Typ)45 ns
- Turn-Off Delay Time60 ns
- Continuous Drain Current (ID)5.3A
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage20V
- FET FeatureLogic Level Gate
- Drain to Source Resistance30mOhm
- Rds On Max30 mΩ
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
SI7904DN-T1-GE3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI7904DN-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI7904DN-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI7904DN-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI7904DN-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI7904DN-T1-GE3 More Descriptions
DUAL N-CHANNEL 20-V (D-S) MOSFET- LdFree
MOSFET 2N-CH 20V 5.3A 1212-8
MOSFET 20V 7.7A 2.8W 30mohm @ 4.5V
MOSFET 2N-CH 20V 5.3A 1212-8
MOSFET 20V 7.7A 2.8W 30mohm @ 4.5V
The three parts on the right have similar specifications to SI7904DN-T1-GE3.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureMax Power DissipationBase Part NumberElement ConfigurationTurn On Delay TimePower - MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET FeatureDrain to Source ResistanceRds On MaxRadiation HardeningRoHS StatusNumber of PinsTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsOperating ModePower DissipationCase ConnectionFET TechnologyLead FreeNumber of ChannelsHeightLengthWidthAdditional FeatureTransistor ApplicationPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Nominal VgsREACH SVHCView Compare
-
SI7904DN-T1-GE3Surface MountSurface MountPowerPAK® 1212-8 DualPowerPAK® 1212-8 Dual-55°C~150°C TJTape & Reel (TR)TrenchFET®2013Obsolete1 (Unlimited)30mOhm150°C-55°C1.3WSI7904Dual15 ns1.3W2 N-Channel (Dual)30mOhm @ 7.7A, 4.5V1V @ 935μA5.3A15nC @ 4.5V50ns20V45 ns60 ns5.3A8V20VLogic Level Gate30mOhm30 mΩNoROHS3 Compliant------------------------------ -
Surface MountSurface MountPowerPAK® SO-8 Dual--55°C~150°C TJTape & Reel (TR)TrenchFET®2016Obsolete1 (Unlimited)17mOhm--1.4WSI7940Dual30 ns-2 N-Channel (Dual)17m Ω @ 11.8A, 4.5V1.5V @ 250μA-17nC @ 4.5V50ns12V50 ns60 ns7.6A8V12VLogic Level Gate--NoROHS3 Compliant8SILICONe3yes6EAR99Matte Tin (Sn)FET General Purpose PowerC BEND260408R-XDSO-C62ENHANCEMENT MODE1.4WDRAINMETAL-OXIDE SEMICONDUCTORLead Free----------
-
Surface MountSurface MountPowerPAK® 1212-8 DualPowerPAK® 1212-8 Dual-55°C~150°C TJTape & Reel (TR)TrenchFET®2016Obsolete1 (Unlimited)-150°C-55°C1.3W-Dual2.5 μs1.3W2 P-Channel (Dual)48mOhm @ 6.3A, 4.5V1V @ 800μA4.3A18nC @ 4.5V4μs20V4 μs15 μs4.3A12V-20VLogic Level Gate48mOhm48 mΩ-ROHS3 Compliant8------------------21.04mm3.05mm3.05mm------
-
Surface MountSurface MountPowerPAK® SO-8 Dual--55°C~150°C TJTape & Reel (TR)TrenchFET®2011Obsolete1 (Unlimited)150MOhm--1.4WSI7946Dual11 ns-2 N-Channel (Dual)150m Ω @ 3.3A, 10V4V @ 250μA2.1A20nC @ 10V15ns-20 ns30 ns3.3A20V150VLogic Level Gate--NoROHS3 Compliant8SILICONe3yes6EAR99Matte Tin (Sn)FET General Purpose PowerC BEND260408R-XDSO-C62ENHANCEMENT MODE1.4WDRAINMETAL-OXIDE SEMICONDUCTORLead Free----AVALANCHE RATEDSWITCHING10A4 mJ4 VUnknown
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
13 October 2023
Universal Logic Gate Chip SN7406N: Equivalent, Working Principle and Package
Ⅰ. What is SN7406N?Ⅱ. Symbol, footprint and pinout of SN7406NⅢ. Technical parameters of SN7406NⅣ. Features of SN7406NⅤ. Working principle of SN7406NⅥ. Dimensions and package of SN7406NⅦ. Manufacturer of... -
13 October 2023
LM3481MM NOPB Converter Features, Pin Configuraiton and Other Details
Ⅰ. Overview of LM3481MM/NOPBⅡ. Symbol and footprint of LM3481MM/NOPBⅢ. Technical parameters of LM3481MM/NOPBⅣ. Features of LM3481MM/NOPBⅤ. Pin configuration of LM3481MM/NOPBⅥ. Application of LM3481MM/NOPBⅦ. How to improve the efficiency... -
16 October 2023
What Is H1102N Pulse Ethernet Transformer?
Ⅰ. What is a transformer?Ⅱ. Overview of H1102NLⅢ. Pin configuration, symbol and footprint of H1102NLⅣ. Technical parameters of H1102NLⅤ. Features of H1102NLⅥ. Working principle of H1102NLⅦ. Dimensions and... -
16 October 2023
BD139 Transistor Equivalent, Technical Parameters and Applications
Ⅰ. Overview of BD139Ⅱ. BD139 symbol, footprint and pin configurationⅢ. Technical parameters of BD139Ⅳ. Features of BD139Ⅴ. Working principle of BD139 transistorⅥ. Circuit of BD139 transistor power amplifierⅦ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.