Vishay Siliconix SI7850DP-T1-GE3

SI7850DP-T1-GE3 Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6.2A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 25 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 40A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3V threshold voltage. By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

SI7850DP-T1-GE3 Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 40A.
a threshold voltage of 3V


SI7850DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7850DP-T1-GE3 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools