ON Semiconductor NVMFS5C410NLWFT3G
- Part Number:
- NVMFS5C410NLWFT3G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2850683-NVMFS5C410NLWFT3G
- Description:
- MOSFET N-CH 40V 48A SO8FL
- Datasheet:
- NVMFS5C410NLWFT3G
ON Semiconductor NVMFS5C410NLWFT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVMFS5C410NLWFT3G.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time38 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2014
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Reach Compliance Codenot_compliant
- ConfigurationSingle
- Power Dissipation-Max3.8W Ta 167W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs0.9m Ω @ 50A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds8862pF @ 25V
- Current - Continuous Drain (Id) @ 25°C48A Ta 315A Tc
- Gate Charge (Qg) (Max) @ Vgs143nC @ 10V
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)315A
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NVMFS5C410NLWFT3G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8862pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 315A amps.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
NVMFS5C410NLWFT3G Features
a continuous drain current (ID) of 315A
a 40V drain to source voltage (Vdss)
NVMFS5C410NLWFT3G Applications
There are a lot of ON Semiconductor
NVMFS5C410NLWFT3G applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8862pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 315A amps.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
NVMFS5C410NLWFT3G Features
a continuous drain current (ID) of 315A
a 40V drain to source voltage (Vdss)
NVMFS5C410NLWFT3G Applications
There are a lot of ON Semiconductor
NVMFS5C410NLWFT3G applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
NVMFS5C410NLWFT3G More Descriptions
Single N-Channel Power MOSFET 40V, 330A, 0.82mΩ 5000 / Tape & Reel. Pb-Free, Wettable Flanks
Trans MOSFET N-CH 40V 315A 5-Pin DFN T/R
Power Field-Effect Transistor, 330A I(D), 40V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RES SMD 150K OHM 1% 1/10W 0603
Trans MOSFET N-CH 40V 315A 5-Pin DFN T/R
Power Field-Effect Transistor, 330A I(D), 40V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RES SMD 150K OHM 1% 1/10W 0603
The three parts on the right have similar specifications to NVMFS5C410NLWFT3G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishSubcategoryTechnologyReach Compliance CodeConfigurationPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)RoHS StatusLead FreeSurface MountPin CountNumber of ChannelsElement ConfigurationTurn On Delay TimeHalogen FreeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Radiation HardeningSeriesPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)View Compare
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NVMFS5C410NLWFT3GACTIVE (Last Updated: 1 week ago)38 WeeksSurface MountSurface Mount8-PowerTDFN8-55°C~175°C TJTape & Reel (TR)2014e3yesDiscontinued1 (Unlimited)EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)not_compliantSingle3.8W Ta 167W TcN-Channel0.9m Ω @ 50A, 10V2V @ 250μA8862pF @ 25V48A Ta 315A Tc143nC @ 10V40V4.5V 10V±20V315AROHS3 CompliantLead Free---------------
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ACTIVE, NOT REC (Last Updated: 3 days ago)38 WeeksSurface MountSurface Mount8-PowerTDFN8-55°C~175°C TJTape & Reel (TR)2014e3yesDiscontinued1 (Unlimited)EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)not_compliantSingle3.8W Ta 167W TcN-Channel0.9m Ω @ 50A, 10V2V @ 250μA8862pF @ 25V48A Ta 315A Tc143nC @ 10V40V4.5V 10V±20V315AROHS3 CompliantLead Free--------------
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ACTIVE, NOT REC (Last Updated: 4 days ago)38 Weeks-Surface Mount8-PowerTDFN5-55°C~175°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)--3.7W Ta 127W TcN-Channel4.2m Ω @ 20A, 10V2.4V @ 250μA2700pF @ 25V21A Ta51nC @ 10V40V4.5V 10V±20V120AROHS3 CompliantLead FreeYES51Single13 nsHalogen Free24ns8 ns27 ns20VNo---
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ACTIVE (Last Updated: 1 hour ago)11 Weeks-Surface Mount8-PowerTDFN, 5 Leads--55°C~175°C TJTape & Reel (TR)-e3yesActive1 (Unlimited)-Tin (Sn)-MOSFET (Metal Oxide)not_compliant-200W TcN-Channel0.67m Ω @ 50A, 10V2V @ 250μA12168pF @ 25V370A Tc81nC @ 4.5V40V4.5V 10V±20V-ROHS3 Compliant------------Automotive, AEC-Q10126010
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