ON Semiconductor NVMFS5833NT1G

NVMFS5833NT1G Overview
A device's maximum input capacitance is 1714pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 16A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 86A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 23.6 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10.23 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

NVMFS5833NT1G Features
a continuous drain current (ID) of 16A
the turn-off delay time is 23.6 ns
a 40V drain to source voltage (Vdss)


NVMFS5833NT1G Applications
There are a lot of ON Semiconductor
NVMFS5833NT1G applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters