ON Semiconductor NVMFS5826NLT3G

NVMFS5826NLT3G Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 20 mJ.A device's maximal input capacitance is 850pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 8A, which represents the maximum continuous current it can conduct.In this device, the drain current is 26A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 15 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

NVMFS5826NLT3G Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 8A
the turn-off delay time is 15 ns
a 60V drain to source voltage (Vdss)


NVMFS5826NLT3G Applications
There are a lot of ON Semiconductor
NVMFS5826NLT3G applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples