ON Semiconductor NVMFS4C03NWFT1G

NVMFS4C03NWFT1G Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 549 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3071pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 143A amps.As far as peak drain current is concerned, its maximum pulsed current is 900A.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

NVMFS4C03NWFT1G Features
the avalanche energy rating (Eas) is 549 mJ
a continuous drain current (ID) of 143A
based on its rated peak drain current 900A.
a 30V drain to source voltage (Vdss)


NVMFS4C03NWFT1G Applications
There are a lot of ON Semiconductor
NVMFS4C03NWFT1G applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies