ON Semiconductor NVMFS5832NLWFT1G

NVMFS5832NLWFT1G Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2700pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 120A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 27 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

NVMFS5832NLWFT1G Features
a continuous drain current (ID) of 120A
the turn-off delay time is 27 ns
a 40V drain to source voltage (Vdss)


NVMFS5832NLWFT1G Applications
There are a lot of ON Semiconductor
NVMFS5832NLWFT1G applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification