ON Semiconductor NTMS4873NFR2G

Name: NTMS4873NFR2G
Brand: ON Semiconductor
SKU: 3071300-NTMS4873NFR2G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTMS4873NFR2G

Manufacturer:: ON Semiconductor

Ventron No:: 3071300-NTMS4873NFR2G

Description:: MOSFET N-CH 30V 7.1A 8-SOIC

ECAD Model:

Datasheet:: NTMS4873NFR2G

Specifications

ON Semiconductor NTMS4873NFR2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMS4873NFR2G.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
R-PDSO-G8
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
870mW Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
12m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1.9pF @ 15V
Current - Continuous Drain (Id) @ 25°C
7.1A Ta
Gate Charge (Qg) (Max) @ Vgs
16nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
7.1A
Drain-source On Resistance-Max
0.012Ohm
DS Breakdown Voltage-Min
30V
Feedback Cap-Max (Crss)
225 pF
RoHS Status
ROHS3 Compliant

Description

NTMS4873NFR2G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1.9pF @ 15V.There is no drain current on this device since the maximum continuous current it can conduct is 7.1A.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

NTMS4873NFR2G Features
a 30V drain to source voltage (Vdss)

NTMS4873NFR2G Applications
There are a lot of Rochester Electronics, LLC
NTMS4873NFR2G applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

NTMS4873NFR2G More Descriptions

Power MOSFET 30V 11.7A 12 mOhm Dual N-Channel SO-8 with Schottky Diode
Trans MOSFET N-CH 30V 11.5A 8-Pin SOIC N T/R - Tape and Reel
Small Signal Field-Effect Transistor, 7.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 7.1A Ta 11.7A 1.39W 3.8ns
French Electronic Distributor since 1988
NTMS4873NFR2G, SINGLE MOSFETS;

Product Comparison

The three parts on the right have similar specifications to NTMS4873NFR2G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

RoHS Status

Lifecycle Status

Factory Lead Time

Contact Plating

Number of Pins

Published

ECCN Code

Subcategory

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Height

Length

Width

Radiation Hardening

Lead Free

Drain to Source Breakdown Voltage

View Compare
NTMS4873NFR2G

ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

8

MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

870mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

12m Ω @ 10A, 10V

2.5V @ 250μA

1.9pF @ 15V

7.1A Ta

16nC @ 4.5V

30V

4.5V 10V

±20V

7.1A

0.012Ohm

30V

225 pF

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTMS4920NR2G

ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

8

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

8

-

-

1

-

820mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

4.3m Ω @ 7.5A, 10V

3V @ 250μA

4068pF @ 25V

10.6A Ta

58.9nC @ 10V

30V

4.5V 10V

±20V

-

0.0043Ohm

30V

-

ROHS3 Compliant

ACTIVE (Last Updated: 2 days ago)

51 Weeks

Tin

8

2009

EAR99

FET General Purpose Power

Single

2.12W

15.3 ns

4.7ns

42.2 ns

68.6 ns

17A

20V

1.5mm

5mm

4mm

No

Lead Free

-

NTMS4873NFR2G vs NTMS4920NR2G
NTMS10P02R2G

ON Semiconductor

-

SO-8

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTMS4873NFR2G vs NTMS10P02R2G
NTMS4937NR2G

ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

8

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

8

-

-

1

-

810mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

6.5m Ω @ 7.5A, 10V

2.5V @ 250μA

2563pF @ 25V

8.6A Ta

38.5nC @ 10V

-

4.5V 10V

±20V

11.2A

0.0065Ohm

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 4 days ago)

2 Weeks

-

8

2009

EAR99

FET General Purpose Power

Single

1.36W

12.3 ns

3.6ns

38.9 ns

33.8 ns

8.6A

20V

-

-

-

No

Lead Free

30V

NTMS4873NFR2G vs NTMS4937NR2G