NTMS4920NR2G

ON Semiconductor NTMS4920NR2G

Part Number:
NTMS4920NR2G
Manufacturer:
ON Semiconductor
Ventron No:
3070295-NTMS4920NR2G
Description:
MOSFET N-CH 30V 10.6A 8SOIC
ECAD Model:
Datasheet:
NTMS4920NR2G

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Specifications
ON Semiconductor NTMS4920NR2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMS4920NR2G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    51 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Surface Mount
    YES
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • Number of Elements
    1
  • Power Dissipation-Max
    820mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.12W
  • Turn On Delay Time
    15.3 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.3m Ω @ 7.5A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4068pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    10.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    58.9nC @ 10V
  • Rise Time
    4.7ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    42.2 ns
  • Turn-Off Delay Time
    68.6 ns
  • Continuous Drain Current (ID)
    17A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0043Ohm
  • DS Breakdown Voltage-Min
    30V
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTMS4920NR2G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4068pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 68.6 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15.3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

NTMS4920NR2G Features
a continuous drain current (ID) of 17A
the turn-off delay time is 68.6 ns
a 30V drain to source voltage (Vdss)


NTMS4920NR2G Applications
There are a lot of ON Semiconductor
NTMS4920NR2G applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
NTMS4920NR2G More Descriptions
NTMS4920NR2G N-channel MOSFET Transistor, 17 A, 30 V, 8-Pin SOIC | ON Semiconductor NTMS4920NR2G
Single N-Channel Power MOSFET 30V, 17A, 4.3mΩ
Mosfet, N-Ch, 30V, 17A, Soic; Transistor Polarity:N Channel; Continuous Drain Current Id:14.1A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0036Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes |Onsemi NTMS4920NR2G.
Product Comparison
The three parts on the right have similar specifications to NTMS4920NR2G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    FET Feature
    Terminal Finish
    Reach Compliance Code
    JESD-30 Code
    Qualification Status
    Configuration
    Case Connection
    Drain Current-Max (Abs) (ID)
    View Compare
  • NTMS4920NR2G
    NTMS4920NR2G
    ACTIVE (Last Updated: 2 days ago)
    51 Weeks
    Tin
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    820mW Ta
    Single
    ENHANCEMENT MODE
    2.12W
    15.3 ns
    N-Channel
    SWITCHING
    4.3m Ω @ 7.5A, 10V
    3V @ 250μA
    4068pF @ 25V
    10.6A Ta
    58.9nC @ 10V
    4.7ns
    30V
    4.5V 10V
    ±20V
    42.2 ns
    68.6 ns
    17A
    20V
    0.0043Ohm
    30V
    1.5mm
    5mm
    4mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTMSD2P102R2SG
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    8
    -
    -
    Tape & Reel (TR)
    2007
    -
    -
    Obsolete
    3 (168 Hours)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    P-Channel
    -
    90m Ω @ 2.4A, 4.5V
    -
    750pF @ 16V
    2.3A Ta
    18nC @ 4.5V
    -
    20V
    -
    -
    -
    -
    2.3A
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    Surface Mount
    -20V
    710mW
    -2.3A
    Schottky Diode (Isolated)
    -
    -
    -
    -
    -
    -
    -
  • NTMS4800NR2G
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    8
    1
    750mW Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    20m Ω @ 7.5A, 10V
    3V @ 250μA
    940pF @ 25V
    4.9A Ta
    7.7nC @ 4.5V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    0.02Ohm
    30V
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    MATTE TIN
    unknown
    R-PDSO-G8
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    DRAIN
    6.4A
  • NTMS10P02R2G
    -
    -
    -
    -
    SO-8
    -
    -
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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