ON Semiconductor NTMS4920NR2G
- Part Number:
- NTMS4920NR2G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3070295-NTMS4920NR2G
- Description:
- MOSFET N-CH 30V 10.6A 8SOIC
- Datasheet:
- NTMS4920NR2G
ON Semiconductor NTMS4920NR2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMS4920NR2G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time51 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements1
- Power Dissipation-Max820mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.12W
- Turn On Delay Time15.3 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.3m Ω @ 7.5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4068pF @ 25V
- Current - Continuous Drain (Id) @ 25°C10.6A Ta
- Gate Charge (Qg) (Max) @ Vgs58.9nC @ 10V
- Rise Time4.7ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)42.2 ns
- Turn-Off Delay Time68.6 ns
- Continuous Drain Current (ID)17A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0043Ohm
- DS Breakdown Voltage-Min30V
- Height1.5mm
- Length5mm
- Width4mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTMS4920NR2G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4068pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 68.6 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15.3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NTMS4920NR2G Features
a continuous drain current (ID) of 17A
the turn-off delay time is 68.6 ns
a 30V drain to source voltage (Vdss)
NTMS4920NR2G Applications
There are a lot of ON Semiconductor
NTMS4920NR2G applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4068pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 68.6 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15.3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NTMS4920NR2G Features
a continuous drain current (ID) of 17A
the turn-off delay time is 68.6 ns
a 30V drain to source voltage (Vdss)
NTMS4920NR2G Applications
There are a lot of ON Semiconductor
NTMS4920NR2G applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
NTMS4920NR2G More Descriptions
NTMS4920NR2G N-channel MOSFET Transistor, 17 A, 30 V, 8-Pin SOIC | ON Semiconductor NTMS4920NR2G
Single N-Channel Power MOSFET 30V, 17A, 4.3mΩ
Mosfet, N-Ch, 30V, 17A, Soic; Transistor Polarity:N Channel; Continuous Drain Current Id:14.1A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0036Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes |Onsemi NTMS4920NR2G.
Single N-Channel Power MOSFET 30V, 17A, 4.3mΩ
Mosfet, N-Ch, 30V, 17A, Soic; Transistor Polarity:N Channel; Continuous Drain Current Id:14.1A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0036Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes |Onsemi NTMS4920NR2G.
The three parts on the right have similar specifications to NTMS4920NR2G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDS Breakdown Voltage-MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeMountVoltage - Rated DCMax Power DissipationCurrent RatingFET FeatureTerminal FinishReach Compliance CodeJESD-30 CodeQualification StatusConfigurationCase ConnectionDrain Current-Max (Abs) (ID)View Compare
-
NTMS4920NR2GACTIVE (Last Updated: 2 days ago)51 WeeksTinSurface Mount8-SOIC (0.154, 3.90mm Width)YES8SILICON-55°C~150°C TJTape & Reel (TR)2009e3yesActive1 (Unlimited)8EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING2604081820mW TaSingleENHANCEMENT MODE2.12W15.3 nsN-ChannelSWITCHING4.3m Ω @ 7.5A, 10V3V @ 250μA4068pF @ 25V10.6A Ta58.9nC @ 10V4.7ns30V4.5V 10V±20V42.2 ns68.6 ns17A20V0.0043Ohm30V1.5mm5mm4mmNoROHS3 CompliantLead Free-------------
-
---Surface Mount8-SOIC (0.154, 3.90mm Width)-8--Tape & Reel (TR)2007--Obsolete3 (168 Hours)---MOSFET (Metal Oxide)-----------P-Channel-90m Ω @ 2.4A, 4.5V-750pF @ 16V2.3A Ta18nC @ 4.5V-20V----2.3A-------RoHS CompliantLead FreeSurface Mount-20V710mW-2.3ASchottky Diode (Isolated)-------
-
---Surface Mount8-SOIC (0.154, 3.90mm Width)YES-SILICON-55°C~150°C TJTape & Reel (TR)-e3yesObsolete1 (Unlimited)8--MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED81750mW Ta-ENHANCEMENT MODE--N-ChannelSWITCHING20m Ω @ 7.5A, 10V3V @ 250μA940pF @ 25V4.9A Ta7.7nC @ 4.5V-30V4.5V 10V±20V----0.02Ohm30V----ROHS3 Compliant------MATTE TINunknownR-PDSO-G8COMMERCIALSINGLE WITH BUILT-IN DIODEDRAIN6.4A
-
----SO-8----Tape & Reel (TR)-----------------------------------------RoHS Compliant-------------
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
08 April 2024
STM32F103RET6: Everything You Need to Know For Your Project
Ⅰ. Overview of STM32F103RET6Ⅱ. Importance of STM32F103RET6 in the field of technologyⅢ. Specifications of STM32F103RET6Ⅳ. The practical application of STM32F103RET6Ⅴ. Electrical characteristics of STM32F103RET6Ⅵ. How to use STM32F103RET6?Ⅶ.... -
09 April 2024
TPS82085SILR Characteristics, Specifications, Application Cases and More
Ⅰ. What is TPS82085SILR?Ⅱ. Characteristics of TPS82085SILRⅢ. Device functional modesⅣ. Specifications of TPS82085SILRⅤ. Thermal consideration of TPS82085SILRⅥ. What advanced technologies does TPS82085SILR use?Ⅶ. Competitive product analysis of TPS82085SILRⅧ.... -
09 April 2024
INA826AIDR Layout and Selection Guide
Ⅰ. Description of INA826AIDRⅡ. Pin configuration and functionsⅢ. Functional features of INA826AIDRⅣ. What impact does external resistance have on the stability of INA826AIDR?Ⅴ. Schematic diagram and working principle... -
10 April 2024
LM2904DT Dual Operational Amplifier: Features, Package and Specifications
Ⅰ. Overview of LM2904DTⅡ. Electrical characteristic curvesⅢ. Features of LM2904DTⅣ. Package of LM2904DTⅤ. Supply voltage and current requirements of LM2904DTⅥ. Specifications of LM2904DTⅦ. How to use LM2904DT in...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.