ON Semiconductor NTMS4840NR2G
- Part Number:
- NTMS4840NR2G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3586854-NTMS4840NR2G
- Description:
- MOSFET N-CH 30V 4.5A 8SOIC
- Datasheet:
- NTMS4840NR2G
ON Semiconductor NTMS4840NR2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMS4840NR2G.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Terminal FinishMATTE TIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count8
- JESD-30 CodeR-PDSO-G8
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max680mW Ta
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs24m Ω @ 6.9A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds520pF @ 15V
- Current - Continuous Drain (Id) @ 25°C4.5A Ta
- Gate Charge (Qg) (Max) @ Vgs9.5nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)5.5A
- Drain-source On Resistance-Max0.024Ohm
- DS Breakdown Voltage-Min30V
- RoHS StatusROHS3 Compliant
NTMS4840NR2G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 520pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 5.5A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
NTMS4840NR2G Features
a 30V drain to source voltage (Vdss)
NTMS4840NR2G Applications
There are a lot of Rochester Electronics, LLC
NTMS4840NR2G applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 520pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 5.5A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
NTMS4840NR2G Features
a 30V drain to source voltage (Vdss)
NTMS4840NR2G Applications
There are a lot of Rochester Electronics, LLC
NTMS4840NR2G applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
NTMS4840NR2G More Descriptions
30 V, 7.5 A, 24 mOhm Single N-Channel Power MOSFET, SO-8
Power MOSFET N Channel Single 30V 7.5A SOIC8 Package
Small Signal Field-Effect Transistor, 5.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 4.5A Ta 4.5A 680mW Ta 30V
Power MOSFET N Channel Single 30V 7.5A SOIC8 Package
Small Signal Field-Effect Transistor, 5.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 4.5A Ta 4.5A 680mW Ta 30V
The three parts on the right have similar specifications to NTMS4840NR2G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusLifecycle StatusFactory Lead TimeContact PlatingNumber of PinsPublishedECCN CodeSubcategoryElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)HeightLengthWidthRadiation HardeningLead FreeDrain to Source Breakdown VoltageSupplier Device PackageView Compare
-
NTMS4840NR2GSurface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)8MATTE TINMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDunknownNOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE680mW TaENHANCEMENT MODEDRAINN-ChannelSWITCHING24m Ω @ 6.9A, 10V3V @ 250μA520pF @ 15V4.5A Ta9.5nC @ 10V30V4.5V 10V±20V5.5A0.024Ohm30VROHS3 Compliant-----------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)8-MOSFET (Metal Oxide)DUALGULL WING260-408--1-820mW TaENHANCEMENT MODE-N-ChannelSWITCHING4.3m Ω @ 7.5A, 10V3V @ 250μA4068pF @ 25V10.6A Ta58.9nC @ 10V30V4.5V 10V±20V-0.0043Ohm30VROHS3 CompliantACTIVE (Last Updated: 2 days ago)51 WeeksTin82009EAR99FET General Purpose PowerSingle2.12W15.3 ns4.7ns42.2 ns68.6 ns17A20V1.5mm5mm4mmNoLead Free--
-
Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)8Tin (Sn)MOSFET (Metal Oxide)DUALGULL WING260-408--1-810mW TaENHANCEMENT MODE-N-ChannelSWITCHING6.5m Ω @ 7.5A, 10V2.5V @ 250μA2563pF @ 25V8.6A Ta38.5nC @ 10V-4.5V 10V±20V11.2A0.0065Ohm-ROHS3 CompliantACTIVE (Last Updated: 4 days ago)2 Weeks-82009EAR99FET General Purpose PowerSingle1.36W12.3 ns3.6ns38.9 ns33.8 ns8.6A20V---NoLead Free30V-
-
Surface Mount8-SOIC (0.154, 3.90mm Width)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)----------1.5W Ta--N-Channel-25mOhm @ 7A, 10V3V @ 250μA785pF @ 20V5.8A Ta17nC @ 10V40V4.5V 10V±20V---Non-RoHS Compliant---------------------8-SOIC
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
20 December 2023
1N4007 Diode Characteristics and Application Guide
Ⅰ. Introduction of 1N4007Ⅱ. Naming rules of 1N4007 diodeⅢ. Technical parameters of 1N4007 diodeⅣ. Can we use 1N4004 instead of 1N4007?Ⅴ. 1N4007 diode principle of operationⅥ. Electrical characteristic... -
21 December 2023
Comprehensive Exploration of BC547 Transistor: Advantages, Uses, Specifications and Working Status
Ⅰ. BC547 descriptionⅡ. What are the advantages of BC547 transistor?Ⅲ. BC547 application circuitⅣ. Specifications of BC547Ⅴ. Working status of BC547 transistorⅥ. Absolute maximum ratings of BC547Ⅶ. What are... -
21 December 2023
Exploring the PC817 Optocoupler: Working Principle, Package, Manufacturer and More
Ⅰ. What is PC817 optocoupler?Ⅱ. How PC817 optocoupler works?Ⅲ. Where can we use PC817 optocoupler?Ⅳ. PC817 optocoupler packageⅤ. How to measure the quality of PC817?Ⅵ. Manufacturer of PC817... -
22 December 2023
STM32F429IGT6 Microcontroller: Feature-Rich Embedded System Design
Ⅰ. What is STM32F429IGT6?Ⅱ. Application fields of STM32F429IGT6Ⅲ. Naming rules of STM32F429IGT6Ⅳ. Precautions for using STM32F429IGT6Ⅴ. STM32F429IGT6 characteristicsⅥ. Power supply diagram of STM32F429IGT6Ⅶ. Specifications of STM32F429IGT6Ⅷ. How to...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.