ON Semiconductor NTMS4935NR2G

Name: NTMS4935NR2G
Brand: ON Semiconductor
SKU: 3813760-NTMS4935NR2G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTMS4935NR2G

Manufacturer:: ON Semiconductor

Ventron No:: 3813760-NTMS4935NR2G

Description:: MOSFET N-CH 30V 10A 8SOIC

ECAD Model:

Datasheet:: NTMS4935NR2G

Specifications

ON Semiconductor NTMS4935NR2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMS4935NR2G.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
R-PDSO-G8
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
810mW Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5.1m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3.639pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10A Ta
Gate Charge (Qg) (Max) @ Vgs
52.1nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
10A
Drain-source On Resistance-Max
0.0051Ohm
DS Breakdown Voltage-Min
30V
RoHS Status
ROHS3 Compliant

Description

NTMS4935NR2G Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3.639pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 10A.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

NTMS4935NR2G Features
a 30V drain to source voltage (Vdss)

NTMS4935NR2G Applications
There are a lot of Rochester Electronics, LLC
NTMS4935NR2G applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

NTMS4935NR2G More Descriptions

Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 10A Ta 10A 1.38W 30V
Power MOSFET 30V 16A 5.1 mOhm Single N-Channel SO-8
Power MOSFET N Channel Single 30V 126A SOIC8
Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 30V, 16A, SOIC-8;

Product Comparison

The three parts on the right have similar specifications to NTMS4935NR2G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

RoHS Status

Lifecycle Status

Factory Lead Time

Contact Plating

Number of Pins

Published

ECCN Code

Subcategory

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Height

Length

Width

Radiation Hardening

Lead Free

Additional Feature

Voltage - Rated DC

Current Rating

Drain to Source Breakdown Voltage

Supplier Device Package

View Compare
NTMS4935NR2G

ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

8

MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

unknown

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

810mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

5.1m Ω @ 7.5A, 10V

2.5V @ 250μA

3.639pF @ 25V

10A Ta

52.1nC @ 10V

30V

4.5V 10V

±20V

10A

0.0051Ohm

30V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTMS4920NR2G

ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

8

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

40

8

-

-

1

-

820mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

4.3m Ω @ 7.5A, 10V

3V @ 250μA

4068pF @ 25V

10.6A Ta

58.9nC @ 10V

30V

4.5V 10V

±20V

-

0.0043Ohm

30V

ROHS3 Compliant

ACTIVE (Last Updated: 2 days ago)

51 Weeks

Tin

8

2009

EAR99

FET General Purpose Power

Single

2.12W

15.3 ns

4.7ns

42.2 ns

68.6 ns

17A

20V

1.5mm

5mm

4mm

No

Lead Free

-

-

-

-

-

NTMS4935NR2G vs NTMS4920NR2G
NTMS7N03R2G

ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

8

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

40

8

-

-

1

-

800mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

23m Ω @ 7A, 10V

3V @ 250μA

1190pF @ 25V

4.8A Ta

43nC @ 10V

-

4.5V 10V

±20V

-

0.023Ohm

-

ROHS3 Compliant

ACTIVE (Last Updated: 1 day ago)

29 Weeks

Tin

8

2005

EAR99

FET General Purpose Power

Single

2.5W

-

71ns

38 ns

27 ns

7mA

20V

-

-

-

No

Lead Free

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

30V

7A

30V

-

NTMS4935NR2G vs NTMS7N03R2G
NTMS5838NLR2G

ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

1.5W Ta

-

N-Channel

-

25mOhm @ 7A, 10V

3V @ 250μA

785pF @ 20V

5.8A Ta

17nC @ 10V

40V

4.5V 10V

±20V

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

8-SOIC

NTMS4935NR2G vs NTMS5838NLR2G