ON Semiconductor NTMSD2P102R2SG

Name: NTMSD2P102R2SG
Brand: ON Semiconductor
SKU: 3586636-NTMSD2P102R2SG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTMSD2P102R2SG

Manufacturer:: ON Semiconductor

Ventron No:: 3586636-NTMSD2P102R2SG

Description:: MOSFET P-CH 20V 2.3A 8-SOIC

ECAD Model:

Datasheet:: NTMSD2P102R2SG

Specifications

ON Semiconductor NTMSD2P102R2SG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMSD2P102R2SG.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Packaging
Tape & Reel (TR)
Published
2007
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Voltage - Rated DC
-20V
Max Power Dissipation
710mW
Technology
MOSFET (Metal Oxide)
Current Rating
-2.3A
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
90m Ω @ 2.4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds
750pF @ 16V
Current - Continuous Drain (Id) @ 25°C
2.3A Ta
Gate Charge (Qg) (Max) @ Vgs
18nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Continuous Drain Current (ID)
2.3A
FET Feature
Schottky Diode (Isolated)
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

NTMSD2P102R2SG Overview
The maximum input capacitance of this device is 750pF @ 16V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.3A.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.

NTMSD2P102R2SG Features
a continuous drain current (ID) of 2.3A
a 20V drain to source voltage (Vdss)

NTMSD2P102R2SG Applications
There are a lot of ON Semiconductor
NTMSD2P102R2SG applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

NTMSD2P102R2SG More Descriptions

MOSFET P-CH 20V 2.3A 8-SOIC
MOSFETs- Power and Small Signal FETKY 20V.150R LL TR
TRANS NPN 25V 0.2A SOT-346 SMT3

Product Comparison

The three parts on the right have similar specifications to NTMSD2P102R2SG.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Voltage - Rated DC

Max Power Dissipation

Technology

Current Rating

FET Type

Rds On (Max) @ Id, Vgs

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Continuous Drain Current (ID)

FET Feature

RoHS Status

Lead Free

Surface Mount

Transistor Element Material

Operating Temperature

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

Transistor Application

Vgs(th) (Max) @ Id

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Lifecycle Status

Factory Lead Time

Contact Plating

ECCN Code

Subcategory

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Height

Length

Width

Radiation Hardening

Drain to Source Breakdown Voltage

View Compare
NTMSD2P102R2SG

ON Semiconductor

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

Tape & Reel (TR)

2007

Obsolete

3 (168 Hours)

-20V

710mW

MOSFET (Metal Oxide)

-2.3A

P-Channel

90m Ω @ 2.4A, 4.5V

750pF @ 16V

2.3A Ta

18nC @ 4.5V

20V

2.3A

Schottky Diode (Isolated)

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTMS4840NR2G

ON Semiconductor

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

Tape & Reel (TR)

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

N-Channel

24m Ω @ 6.9A, 10V

520pF @ 15V

4.5A Ta

9.5nC @ 10V

30V

-

-

ROHS3 Compliant

-

YES

SILICON

-55°C~150°C TJ

e3

yes

8

MATTE TIN

DUAL

GULL WING

NOT SPECIFIED

unknown

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

680mW Ta

ENHANCEMENT MODE

DRAIN

SWITCHING

3V @ 250μA

4.5V 10V

±20V

5.5A

0.024Ohm

30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTMSD2P102R2SG vs NTMS4840NR2G
NTMS4920NR2G

ON Semiconductor

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

Tape & Reel (TR)

2009

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

N-Channel

4.3m Ω @ 7.5A, 10V

4068pF @ 25V

10.6A Ta

58.9nC @ 10V

30V

17A

-

ROHS3 Compliant

Lead Free

YES

SILICON

-55°C~150°C TJ

e3

yes

8

-

DUAL

GULL WING

260

-

40

8

-

-

1

-

820mW Ta

ENHANCEMENT MODE

-

SWITCHING

3V @ 250μA

4.5V 10V

±20V

-

0.0043Ohm

30V

ACTIVE (Last Updated: 2 days ago)

51 Weeks

Tin

EAR99

FET General Purpose Power

Single

2.12W

15.3 ns

4.7ns

42.2 ns

68.6 ns

20V

1.5mm

5mm

4mm

No

-

NTMSD2P102R2SG vs NTMS4920NR2G
NTMS4937NR2G

ON Semiconductor

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

Tape & Reel (TR)

2009

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

N-Channel

6.5m Ω @ 7.5A, 10V

2563pF @ 25V

8.6A Ta

38.5nC @ 10V

-

8.6A

-

ROHS3 Compliant

Lead Free

YES

SILICON

-55°C~150°C TJ

e3

yes

8

Tin (Sn)

DUAL

GULL WING

260

-

40

8

-

-

1

-

810mW Ta

ENHANCEMENT MODE

-

SWITCHING

2.5V @ 250μA

4.5V 10V

±20V

11.2A

0.0065Ohm

-

ACTIVE (Last Updated: 4 days ago)

2 Weeks

-

EAR99

FET General Purpose Power

Single

1.36W

12.3 ns

3.6ns

38.9 ns

33.8 ns

20V

-

-

-

No

30V

NTMSD2P102R2SG vs NTMS4937NR2G