ON Semiconductor NSS1C300ET4G

NSS1C300ET4G Overview
In this device, the DC current gain is 120 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 300mA, 3A.A 3A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

NSS1C300ET4G Features
the DC current gain for this device is 120 @ 1A 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz


NSS1C300ET4G Applications
There are a lot of ON Semiconductor
NSS1C300ET4G applications of single BJT transistors.


Inverter
Interface
Driver
Muting