Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NSS12100XV6T1G
NSS12100XV6T1G

ON Semiconductor NSS12100XV6T1G

Part Number:
NSS12100XV6T1G
Manufacturer:
ON Semiconductor
Ventron No:
3068873-NSS12100XV6T1G
Description:
TRANS PNP 12V 1A SOT-563
ECAD Model:
Datasheet:
NSS12100XV6T1G

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
ON Semiconductor NSS12100XV6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSS12100XV6T1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    17 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    500mW
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Base Part Number
    NSS12100
  • Pin Count
    6
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    650mW
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Gain Bandwidth Product
    100MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    12V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 500mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    440mV @ 100mA, 1A
  • Collector Emitter Breakdown Voltage
    12V
  • Max Frequency
    1MHz
  • Transition Frequency
    100MHz
  • Collector Emitter Saturation Voltage
    -400mV
  • Max Breakdown Voltage
    12V
  • Collector Base Voltage (VCBO)
    12V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    150
  • Height
    600μm
  • Length
    1.7mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NSS12100XV6T1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 440mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 12V volts.During maximum operation, collector current can be as low as 1A volts.

NSS12100XV6T1G Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 440mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


NSS12100XV6T1G Applications
There are a lot of ON Semiconductor
NSS12100XV6T1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
NSS12100XV6T1G More Descriptions
NSS12100XV6T1G Series PNP 12 V 1 A Surface Mount Transistor - SOT-563
ON Semi NSS12100XV6T1G PNP Bipolar Transistor, 1 A, 12 V, 6-Pin SOT-563 | ON Semiconductor NSS12100XV6T1G
Small Signal Bipolar Transistor, 1A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 12V 1A 500mW Automotive 6-Pin SOT-563 T/R
Low VCE(sat) Transistor, PNP, 12 V, 1.0 A
BIPOLAR TRANSISTOR, PNP, -12V, SOT-563, FULL REEL
BIPOLAR Transistor, PNP, -12V, SOT-563;; SOT-563; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:12V;
Bipolar Transistor, Pnp, -12V, Sot-563, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:12V; Continuous Collector Current:1A; Power Dissipation:500Mw; Transistor Mounting:Surface Mount; No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi NSS12100XV6T1G.
Product Comparison
The three parts on the right have similar specifications to NSS12100XV6T1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Transistor Application
    Halogen Free
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Max Frequency
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Frequency
    Case Connection
    Power - Max
    Turn Off Time-Max (toff)
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Turn On Time-Max (ton)
    Voltage - Rated DC
    Current Rating
    View Compare
  • NSS12100XV6T1G
    NSS12100XV6T1G
    ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    17 Weeks
    Tin
    Surface Mount
    Surface Mount
    SOT-563, SOT-666
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Other Transistors
    500mW
    DUAL
    FLAT
    NSS12100
    6
    1
    Single
    650mW
    SWITCHING
    Halogen Free
    100MHz
    PNP
    PNP
    12V
    1A
    100 @ 500mA 2V
    100nA ICBO
    440mV @ 100mA, 1A
    12V
    1MHz
    100MHz
    -400mV
    12V
    12V
    5V
    150
    600μm
    1.7mm
    1.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NSS12100UW3TCG
    NSS12100UW3TCG
    ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Tin
    -
    Surface Mount
    3-WDFN Exposed Pad
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    1.1W
    DUAL
    -
    NSS12100
    3
    1
    Single
    1.1W
    SWITCHING
    Halogen Free
    200MHz
    PNP
    PNP
    12V
    1A
    100 @ 500mA 2V
    100nA ICBO
    440mV @ 100mA, 1A
    12V
    -
    200MHz
    -
    12V
    12V
    5V
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    YES
    200MHz
    COLLECTOR
    740mW
    240ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NSS12100XV6T1G vs NSS12100UW3TCG
  • NSS12600CF8T1G
    NSS12600CF8T1G
    ON Semiconductor
    -
    -
    -
    -
    Surface Mount
    8-SMD, Flat Lead
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    -
    -
    DUAL
    C BEND
    -
    8
    1
    -
    -
    SWITCHING
    -
    -
    PNP
    PNP
    -
    -
    250 @ 1A 2V
    100nA ICBO
    170mV @ 400mA, 4A
    -
    -
    100MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    -
    -
    830mW
    590ns
    TIN
    265
    40
    R-PDSO-C8
    COMMERCIAL
    SINGLE
    12V
    5A
    100MHz
    350ns
    -
    -
    NSS12100XV6T1G vs NSS12600CF8T1G
  • NSS12200WT1G
    NSS12200WT1G
    ON Semiconductor
    ACTIVE (Last Updated: 6 days ago)
    2 Weeks
    -
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Other Transistors
    450mW
    DUAL
    GULL WING
    NSS12200
    6
    1
    Single
    650mW
    SWITCHING
    Halogen Free
    100MHz
    PNP
    PNP
    12V
    2A
    100 @ 800mA 1.5 V
    100nA
    290mV @ 20mA, 1A
    12V
    -
    100MHz
    -170mV
    12V
    12V
    -5V
    100
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    YES
    100MHz
    -
    450mW
    -
    Tin (Sn)
    260
    40
    -
    -
    -
    -
    -
    -
    -
    -12V
    -2A
    NSS12100XV6T1G vs NSS12200WT1G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for NSS12100XV6T1G
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.