ON Semiconductor NSS1C301ET4G

Name: NSS1C301ET4G
Brand: ON Semiconductor
SKU: 3068699-NSS1C301ET4G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NSS1C301ET4G

Manufacturer:: ON Semiconductor

Ventron No:: 3068699-NSS1C301ET4G

Description:: TRANS NPN 100V 3A 3DPAK

ECAD Model:

Datasheet:: NSS1C301ET4G

Specifications

ON Semiconductor NSS1C301ET4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSS1C301ET4G.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Number of Pins
3
Weight
260.39037mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
2.1W
Terminal Form
GULL WING
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Gain Bandwidth Product
120MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
120MHz
Collector Emitter Saturation Voltage
115mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
6V
hFE Min
120
Continuous Collector Current
3A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NSS1C301ET4G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1A 2V.The collector emitter saturation voltage is 115mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 3A for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 120MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.

NSS1C301ET4G Features
the DC current gain for this device is 120 @ 1A 2V
a collector emitter saturation voltage of 115mV
the vce saturation(Max) is 250mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 120MHz

NSS1C301ET4G Applications
There are a lot of ON Semiconductor
NSS1C301ET4G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

NSS1C301ET4G More Descriptions

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
3 A, 100 V Low VCE(sat) NPN Transistor
Trans GP BJT NPN 100V 3A 2100mW 3-Pin(2 Tab) DPAK T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, Npn, 100V, 3A, To-252; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:100V; Transition Frequency Ft:120Mhz; Power Dissipation Pd:33W; Dc Collector Current:3A; Dc Current Gain Hfe:80Hfe; Transistor Case Rohs Compliant: Yes |Onsemi NSS1C301ET4G

Product Comparison

The three parts on the right have similar specifications to NSS1C301ET4G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Case Connection

Transistor Application

Halogen Free

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Terminal Position

Base Part Number

Power Dissipation

Height

Length

Width

REACH SVHC

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Configuration

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

View Compare
NSS1C301ET4G

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

8 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

260.39037mg

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

2016

e3

yes

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

Other Transistors

2.1W

GULL WING

3

R-PSSO-G2

1

Single

COLLECTOR

SWITCHING

Halogen Free

120MHz

NPN

NPN

100V

3A

120 @ 1A 2V

100nA ICBO

250mV @ 300mA, 3A

100V

120MHz

115mV

100V

140V

6V

120

3A

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NSS12100M3T5G

ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

4 Weeks

Surface Mount

SOT-723

YES

3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

3

EAR99

-

Other Transistors

625mW

FLAT

3

-

1

Single

-

SWITCHING

Halogen Free

-

PNP

PNP

12V

1A

120 @ 500mA 2V

100nA ICBO

410mV @ 100mA, 1A

12V

-

-35mV

12V

12V

5V

80

-

No

ROHS3 Compliant

Lead Free

Tin

DUAL

NSS12100

625mW

550μm

1.25mm

850μm

No SVHC

-

-

-

-

-

-

-

-

-

-

NSS1C301ET4G vs NSS12100M3T5G
NSS12600CF8T1G

ON Semiconductor

-

-

Surface Mount

8-SMD, Flat Lead

YES

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

yes

Obsolete

1 (Unlimited)

8

-

TIN

-

-

C BEND

8

R-PDSO-C8

1

-

-

SWITCHING

-

-

PNP

PNP

-

-

250 @ 1A 2V

100nA ICBO

170mV @ 400mA, 4A

-

100MHz

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

DUAL

-

-

-

-

-

-

265

40

COMMERCIAL

SINGLE

830mW

12V

5A

100MHz

590ns

350ns

NSS1C301ET4G vs NSS12600CF8T1G
NSS1C200MZ4T3G

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

4 Weeks

Surface Mount

TO-261-4, TO-261AA

YES

4

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

4

EAR99

Tin (Sn)

-

2W

GULL WING

4

-

1

Single

COLLECTOR

SWITCHING

Halogen Free

120MHz

PNP

PNP

100V

3A

120 @ 500mA 2V

100nA ICBO

220mV @ 200mA, 2A

100V

120MHz

-

-

140V

7V

-

-

No

ROHS3 Compliant

Lead Free

-

DUAL

NSS1C200

-

-

-

-

-

-

-

-

-

800mW

-

2A

-

-

-

NSS1C301ET4G vs NSS1C200MZ4T3G

Certification

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NSS1C301ET4G Specification

Part Number	Manufacturers	Description	Stock	Price
NSS1C301ET4G DISTI #V72:2272_07311326	ON Semiconductor	Trans GP BJT NPN 100V 3A Automotive 3-Pin(2 Tab) D RoHS: Compliant	148	1 $0.6954 10 $0.5744 25 $0.47 100 $0.3386
NSS1C301ET4G DISTI #V36:1790_07311326	ON Semiconductor	Trans GP BJT NPN 100V 3A Automotive 3-Pin(2 Tab) D RoHS: Compliant	0
NSS1C301ET4G DISTI #NSS1C301ET4GOSCT-ND	ON Semiconductor	TRANS NPN 100V 3A 3DPAK RoHS: Compliant	8591	1 $0.69 10 $0.607 100 $0.4652 500 $0.36772 1000 $0.29417
NSS1C301ET4G DISTI #NSS1C301ET4GOSDKR-ND	ON Semiconductor	TRANS NPN 100V 3A 3DPAK RoHS: Compliant	8591	1 $0.69 10 $0.607 100 $0.4652 500 $0.36772 1000 $0.29417
NSS1C301ET4G DISTI #NSS1C301ET4GOSTR-ND	ON Semiconductor	TRANS NPN 100V 3A 3DPAK RoHS: Compliant	7500	2500 $0.25882 5000 $0.24098 12500 $0.238
NSS1C301ET4G DISTI #29067867	ON Semiconductor	Trans GP BJT NPN 100V 3A Automotive 3-Pin(2 Tab) D RoHS: Compliant	148	30 $0.5052 100 $0.364
NSS1C301ET4G DISTI #NSS1C301ET4G	ON Semiconductor	Trans GP BJT NPN 100V 3A 3-Pin DPAK T/R (Alt: NSS1 RoHS: Compliant	5000	2500 $0.34 5000 $0.32692 7500 $0.31481 12500 $0.30357 25000 $0.2931 62500 $0.28333 125000 $0.27869
NSS1C301ET4G DISTI #NSS1C301ET4G	ON Semiconductor	Trans GP BJT NPN 100V 3A 3-Pin DPAK T/R (Alt: NSS1 RoHS: Compliant	0	2500 $0.3349 5000 $0.2739 10000 $0.2509 15000 $0.2319 25000 $0.2149
NSS1C301ET4G DISTI #NSS1C301ET4G	ON Semiconductor	Trans GP BJT NPN 100V 3A 3-Pin DPAK T/R - Tape and RoHS: Compliant	0	2500 $0.2219 5000 $0.2199 10000 $0.2169 15000 $0.2149 25000 $0.2089
NSS1C301ET4G DISTI #NSS1C301ET4G	ON Semiconductor	Trans GP BJT NPN 100V 3A 3-Pin DPAK T/R - Bulk (Al RoHS: Compliant	0	1316 $0.2479 2632 $0.2459 3948 $0.2429 6580 $0.2399 13160 $0.2339
NSS1C301ET4G DISTI #14AC4756	ON Semiconductor	TRANSISTOR, NPN, 100V, 3A, TO-252, Transistor Pol	2455	1 $0.646 10 $0.532 25 $0.469 50 $0.406 100 $0.343 250 $0.321 500 $0.298 1000 $0.275
NSS1C301ET4G DISTI #863-NSS1C301ET4G	ON Semiconductor	Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V RoHS: Compliant	2372	1 $0.64 10 $0.527 100 $0.34 1000 $0.272 2500 $0.23 10000 $0.222 25000 $0.213
NSS1C301ET4G DISTI #	ON Semiconductor	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, RoHS: Compliant	1145000	1 $0.31 25 $0.29 100 $0.27 500 $0.26 1000 $0.25
NSS1C301ET4G DISTI #	ON Semiconductor		9030
NSS1C301ET4G DISTI #2728017	ON Semiconductor	TRANSISTOR, NPN, 100V, 3A, TO-252 RoHS: Compliant	2455	1 $1.05 10 $0.92 100 $0.705 500 $0.558 1000 $0.446
NSS1C301ET4G DISTI #2728017	ON Semiconductor	TRANSISTOR, NPN, 100V, 3A, TO-252	2455	5 $0.468 25 $0.435 100 $0.267 250 $0.239 500 $0.21
NSS1C301ET4G DISTI #	ON Semiconductor	3A,100V Low VCE(sat)NPN Transistor	7950	1 $0.62 100 $0.4 500 $0.33 1000 $0.3

NSS1C30~~(2)~~
NSS1C3~~(2)~~
NSS1C~~(7)~~
NSS1~~(22)~~
NSS~~(99)~~

ON Semiconductor NSS1C301ET4G

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