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NSS12100UW3TCG

ON Semiconductor NSS12100UW3TCG

Part Number:
NSS12100UW3TCG
Manufacturer:
ON Semiconductor
Ventron No:
2845081-NSS12100UW3TCG
Description:
TRANS PNP 12V 1A WDFN3
ECAD Model:
Datasheet:
NSS12100UW3TCG

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Specifications
ON Semiconductor NSS12100UW3TCG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSS12100UW3TCG.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    3-WDFN Exposed Pad
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1.1W
  • Terminal Position
    DUAL
  • Frequency
    200MHz
  • Base Part Number
    NSS12100
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.1W
  • Case Connection
    COLLECTOR
  • Power - Max
    740mW
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Gain Bandwidth Product
    200MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    12V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 500mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    440mV @ 100mA, 1A
  • Collector Emitter Breakdown Voltage
    12V
  • Transition Frequency
    200MHz
  • Max Breakdown Voltage
    12V
  • Collector Base Voltage (VCBO)
    12V
  • Emitter Base Voltage (VEBO)
    5V
  • Turn Off Time-Max (toff)
    240ns
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NSS12100UW3TCG Overview
DC current gain in this device equals 100 @ 500mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 440mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 200MHz.Breakdown input voltage is 12V volts.In extreme cases, the collector current can be as low as 1A volts.

NSS12100UW3TCG Features
the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 440mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 200MHz


NSS12100UW3TCG Applications
There are a lot of ON Semiconductor
NSS12100UW3TCG applications of single BJT transistors.


Inverter
Interface
Driver
Muting
NSS12100UW3TCG More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon
NSS Series PNP 740 mW 12 V 1 A Surface Mount Switching Transistor - WDFN-3
Low VCE(sat) Transistor, PNP, 12 V, 1.0 A
Trans GP BJT PNP 12V 1A Automotive 3-Pin WDFN T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor Polarity:PNP; Collector Emitter Voltage Max:12V; Continuous Collector Current:1A; Power Dissipation:1.1W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:200MHz; DC Current Gain hFE Min:75hFE RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to NSS12100UW3TCG.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Max Power Dissipation
    Terminal Position
    Frequency
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Power - Max
    Transistor Application
    Halogen Free
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Turn Off Time-Max (toff)
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Form
    Collector Emitter Saturation Voltage
    Height
    Length
    Width
    REACH SVHC
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Turn On Time-Max (ton)
    View Compare
  • NSS12100UW3TCG
    NSS12100UW3TCG
    ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Tin
    Surface Mount
    3-WDFN Exposed Pad
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    1.1W
    DUAL
    200MHz
    NSS12100
    3
    1
    Single
    1.1W
    COLLECTOR
    740mW
    SWITCHING
    Halogen Free
    200MHz
    PNP
    PNP
    12V
    1A
    100 @ 500mA 2V
    100nA ICBO
    440mV @ 100mA, 1A
    12V
    200MHz
    12V
    12V
    5V
    240ns
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NSS1C200LT1G
    NSS1C200LT1G
    ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    8 Weeks
    Tin
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    1997
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    710mW
    DUAL
    120MHz
    NSS1C200
    3
    1
    Single
    710mW
    -
    490mW
    SWITCHING
    Halogen Free
    120MHz
    PNP
    PNP
    100V
    2A
    120 @ 50mA 2V
    100nA ICBO
    250mV @ 200mA, 2A
    100V
    120MHz
    100V
    140V
    7V
    -
    No
    ROHS3 Compliant
    Lead Free
    GULL WING
    -40mV
    1.01mm
    3.04mm
    1.4mm
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NSS12100UW3TCG vs NSS1C200LT1G
  • NSS12600CF8T1G
    NSS12600CF8T1G
    ON Semiconductor
    -
    -
    -
    Surface Mount
    8-SMD, Flat Lead
    YES
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    -
    -
    DUAL
    -
    -
    8
    1
    -
    -
    -
    830mW
    SWITCHING
    -
    -
    PNP
    PNP
    -
    -
    250 @ 1A 2V
    100nA ICBO
    170mV @ 400mA, 4A
    -
    100MHz
    -
    -
    -
    590ns
    -
    ROHS3 Compliant
    -
    C BEND
    -
    -
    -
    -
    -
    TIN
    265
    40
    R-PDSO-C8
    COMMERCIAL
    SINGLE
    12V
    5A
    100MHz
    350ns
    NSS12100UW3TCG vs NSS12600CF8T1G
  • NSS1C200MZ4T3G
    NSS1C200MZ4T3G
    ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    4 Weeks
    -
    Surface Mount
    TO-261-4, TO-261AA
    YES
    4
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    4
    EAR99
    -
    2W
    DUAL
    -
    NSS1C200
    4
    1
    Single
    -
    COLLECTOR
    800mW
    SWITCHING
    Halogen Free
    120MHz
    PNP
    PNP
    100V
    3A
    120 @ 500mA 2V
    100nA ICBO
    220mV @ 200mA, 2A
    100V
    120MHz
    -
    140V
    7V
    -
    No
    ROHS3 Compliant
    Lead Free
    GULL WING
    -
    -
    -
    -
    -
    Tin (Sn)
    -
    -
    -
    -
    -
    -
    2A
    -
    -
    NSS12100UW3TCG vs NSS1C200MZ4T3G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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