ON Semiconductor NSS12600CF8T1G

Name: NSS12600CF8T1G
Brand: ON Semiconductor
SKU: 2472394-NSS12600CF8T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NSS12600CF8T1G

Manufacturer:: ON Semiconductor

Ventron No:: 2472394-NSS12600CF8T1G

Description:: TRANS PNP 12V 5A CHIPFET

ECAD Model:

Datasheet:: NSS12600CF8T1G

Specifications

ON Semiconductor NSS12600CF8T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSS12600CF8T1G.

Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Terminal Finish
TIN
Terminal Position
DUAL
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
265
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
8
JESD-30 Code
R-PDSO-C8
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
830mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
170mV @ 400mA, 4A
Voltage - Collector Emitter Breakdown (Max)
12V
Current - Collector (Ic) (Max)
5A
Transition Frequency
100MHz
Frequency - Transition
100MHz
Turn Off Time-Max (toff)
590ns
Turn On Time-Max (ton)
350ns
RoHS Status
ROHS3 Compliant

Description

NSS12600CF8T1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 170mV @ 400mA, 4A.The part has a transition frequency of 100MHz.Device displays Collector Emitter Breakdown (12V maximal voltage).

NSS12600CF8T1G Features
the DC current gain for this device is 250 @ 1A 2V
the vce saturation(Max) is 170mV @ 400mA, 4A
a transition frequency of 100MHz

NSS12600CF8T1G Applications
There are a lot of Rochester Electronics, LLC
NSS12600CF8T1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

NSS12600CF8T1G More Descriptions

Tape & Reel (TR) Surface Mount PNP Single Bipolar (BJT) Transistor 250 @ 1A 2V 5A 830mW 100MHz
Small Signal Bipolar Transistor, 5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon
12 V, 6.0 A, Low VCE(sat) PNP Transistor ChipFET

Product Comparison

The three parts on the right have similar specifications to NSS12600CF8T1G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Transition Frequency

Frequency - Transition

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

RoHS Status

Lifecycle Status

Factory Lead Time

Number of Pins

Published

ECCN Code

Subcategory

Max Power Dissipation

Frequency

Base Part Number

Element Configuration

Power Dissipation

Case Connection

Halogen Free

Gain Bandwidth Product

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

Radiation Hardening

Lead Free

Contact Plating

REACH SVHC

View Compare
NSS12600CF8T1G

ON Semiconductor

Surface Mount

8-SMD, Flat Lead

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

8

TIN

DUAL

C BEND

265

40

8

R-PDSO-C8

COMMERCIAL

1

SINGLE

830mW

SWITCHING

PNP

PNP

250 @ 1A 2V

100nA ICBO

170mV @ 400mA, 4A

12V

5A

100MHz

100MHz

590ns

350ns

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NSS12501UW3T2G

ON Semiconductor

Surface Mount

3-WDFN Exposed Pad

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

3

Tin (Sn)

DUAL

-

-

-

3

-

-

1

-

875mW

SWITCHING

NPN

NPN

200 @ 2A 2V

100nA ICBO

120mV @ 400mA, 4A

-

-

150MHz

-

420ns

-

ROHS3 Compliant

ACTIVE (Last Updated: 4 days ago)

2 Weeks

3

2007

EAR99

Other Transistors

1.5W

150MHz

NSS12501

Single

1.5W

COLLECTOR

Halogen Free

150MHz

12V

5A

12V

120mV

12V

12V

6V

200

750μm

2mm

2mm

No

Lead Free

-

-

NSS12600CF8T1G vs NSS12501UW3T2G
NSS12100M3T5G

ON Semiconductor

Surface Mount

SOT-723

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

3

-

DUAL

FLAT

-

-

3

-

-

1

-

-

SWITCHING

PNP

PNP

120 @ 500mA 2V

100nA ICBO

410mV @ 100mA, 1A

-

-

-

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 3 days ago)

4 Weeks

3

2005

EAR99

Other Transistors

625mW

-

NSS12100

Single

625mW

-

Halogen Free

-

12V

1A

12V

-35mV

12V

12V

5V

80

550μm

1.25mm

850μm

No

Lead Free

Tin

No SVHC

NSS12600CF8T1G vs NSS12100M3T5G
NSS12100UW3TCG

ON Semiconductor

Surface Mount

3-WDFN Exposed Pad

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

3

-

DUAL

-

-

-

3

-

-

1

-

740mW

SWITCHING

PNP

PNP

100 @ 500mA 2V

100nA ICBO

440mV @ 100mA, 1A

-

-

200MHz

-

240ns

-

ROHS3 Compliant

ACTIVE (Last Updated: 4 days ago)

8 Weeks

3

2008

EAR99

Other Transistors

1.1W

200MHz

NSS12100

Single

1.1W

COLLECTOR

Halogen Free

200MHz

12V

1A

12V

-

12V

12V

5V

-

-

-

-

No

Lead Free

Tin

-

NSS12600CF8T1G vs NSS12100UW3TCG