ON Semiconductor NSS12200WT1G

Name: NSS12200WT1G
Brand: ON Semiconductor
SKU: 2467044-NSS12200WT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NSS12200WT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2467044-NSS12200WT1G

Description:: TRANS PNP 12V 2A SC-88

ECAD Model:

Datasheet:: NSS12200WT1G

Specifications

ON Semiconductor NSS12200WT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSS12200WT1G.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
2 Weeks
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Surface Mount
YES
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-12V
Max Power Dissipation
450mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-2A
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
NSS12200
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power Dissipation
650mW
Power - Max
450mW
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 800mA 1.5 V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
290mV @ 20mA, 1A
Collector Emitter Breakdown Voltage
12V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-170mV
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
12V
Emitter Base Voltage (VEBO)
-5V
hFE Min
100
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NSS12200WT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 800mA 1.5 V.With a collector emitter saturation voltage of -170mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 290mV @ 20mA, 1A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -2A.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 12V volts that it can take.Collector current can be as low as 2A volts at its maximum.

NSS12200WT1G Features
the DC current gain for this device is 100 @ 800mA 1.5 V
a collector emitter saturation voltage of -170mV
the vce saturation(Max) is 290mV @ 20mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 100MHz

NSS12200WT1G Applications
There are a lot of ON Semiconductor
NSS12200WT1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

NSS12200WT1G More Descriptions

Transistor,bjt,pnp,12V V(Br)Ceo,2A I(C),sot-363 |Onsemi NSS12200WT1G
Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon
Low VCE(sat) Transistor, PNP, 12 V, 2.0 A
Trans GP BJT PNP 12V 2A 650mW Automotive 6-Pin SC-88 T/R

Product Comparison

The three parts on the right have similar specifications to NSS12200WT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Power - Max

Transistor Application

Halogen Free

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Case Connection

Turn Off Time-Max (toff)

JESD-30 Code

Qualification Status

Configuration

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Turn On Time-Max (ton)

View Compare
NSS12200WT1G

ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

2 Weeks

Surface Mount

6-TSSOP, SC-88, SOT-363

YES

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

6

EAR99

Tin (Sn)

Other Transistors

-12V

450mW

DUAL

GULL WING

260

-2A

100MHz

40

NSS12200

6

1

Single

650mW

450mW

SWITCHING

Halogen Free

100MHz

PNP

PNP

12V

2A

100 @ 800mA 1.5 V

100nA

290mV @ 20mA, 1A

12V

100MHz

-170mV

12V

12V

-5V

100

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
NSS12100UW3TCG

ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

8 Weeks

Surface Mount

3-WDFN Exposed Pad

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

-

Other Transistors

-

1.1W

DUAL

-

-

-

200MHz

-

NSS12100

3

1

Single

1.1W

740mW

SWITCHING

Halogen Free

200MHz

PNP

PNP

12V

1A

100 @ 500mA 2V

100nA ICBO

440mV @ 100mA, 1A

12V

200MHz

-

12V

12V

5V

-

No

ROHS3 Compliant

Lead Free

Tin

COLLECTOR

240ns

-

-

-

-

-

-

-

NSS12200WT1G vs NSS12100UW3TCG
NSS12600CF8T1G

ON Semiconductor

-

-

Surface Mount

8-SMD, Flat Lead

YES

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

yes

Obsolete

1 (Unlimited)

8

-

TIN

-

-

-

DUAL

C BEND

265

-

-

40

-

8

1

-

-

830mW

SWITCHING

-

-

PNP

PNP

-

-

250 @ 1A 2V

100nA ICBO

170mV @ 400mA, 4A

-

100MHz

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

590ns

R-PDSO-C8

COMMERCIAL

SINGLE

12V

5A

100MHz

350ns

NSS12200WT1G vs NSS12600CF8T1G
NSS1C200MZ4T3G

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

4 Weeks

Surface Mount

TO-261-4, TO-261AA

YES

4

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

4

EAR99

Tin (Sn)

-

-

2W

DUAL

GULL WING

-

-

-

-

NSS1C200

4

1

Single

-

800mW

SWITCHING

Halogen Free

120MHz

PNP

PNP

100V

3A

120 @ 500mA 2V

100nA ICBO

220mV @ 200mA, 2A

100V

120MHz

-

-

140V

7V

-

No

ROHS3 Compliant

Lead Free

-

COLLECTOR

-

-

-

-

-

2A

-

-

NSS12200WT1G vs NSS1C200MZ4T3G

Certification

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NSS1220~~(4)~~
NSS122~~(4)~~
NSS12~~(13)~~
NSS1~~(22)~~
NSS~~(99)~~

Part Number	Manufacturers	Description	Stock	Price
NSS12200WT1G DISTI #27527751	ON Semiconductor	Trans GP BJT PNP 12V 2A Automotive 6-Pin SC-88 T/R RoHS: Compliant	18000	6000 $0.1287 15000 $0.1208 30000 $0.1117
NSS12200WT1G DISTI #NSS12200WT1GOSTR-ND	ON Semiconductor	TRANS PNP 12V 2A SC-88 RoHS: Compliant	3000	3000 $0.13115 6000 $0.1232 15000 $0.11525 30000 $0.10598
NSS12200WT1G DISTI #NSS12200WT1GOSCT-ND	ON Semiconductor	TRANS PNP 12V 2A SC-88 RoHS: Compliant	3000	1 $0.47 10 $0.385 100 $0.262 500 $0.19648 1000 $0.14736
NSS12200WT1G DISTI #NSS12200WT1GOSDKR-ND	ON Semiconductor	TRANS PNP 12V 2A SC-88 RoHS: Compliant	3000	1 $0.47 10 $0.385 100 $0.262 500 $0.19648 1000 $0.14736
NSS12200WT1G DISTI #V36:1790_07284452	ON Semiconductor	Trans GP BJT PNP 12V 2A Automotive 6-Pin SC-88 T/R RoHS: Compliant	0
NSS12200WT1G DISTI #NSS12200WT1G	ON Semiconductor	Trans GP BJT PNP 12V 2A 6-Pin SC-88 T/R - Bulk (Al RoHS: Compliant	0	3125 $0.1039 6250 $0.1029 9375 $0.1019 15625 $0.1009 31250 $0.0979
NSS12200WT1G DISTI #NSS12200WT1G	ON Semiconductor	Trans GP BJT PNP 12V 2A 6-Pin SC-88 T/R - Tape and RoHS: Compliant	0	6000 $0.0979 12000 $0.0979 18000 $0.0969 30000 $0.0949 60000 $0.0929
NSS12200WT1G DISTI #61K1263	ON Semiconductor	TRANSISTOR,BJT,PNP,12V V(BR)CEO,2A I(C),SOT-363	0	1 $0.5 50 $0.334 100 $0.19 250 $0.185 500 $0.179 1000 $0.126 6000 $0.118 18000 $0.115
NSS12200WT1G DISTI #863-NSS12200WT1G	ON Semiconductor	Bipolar Transistors - BJT 2A 12V Low VCEsat RoHS: Compliant	3687	1 $0.44 10 $0.336 100 $0.182 1000 $0.137 3000 $0.118 9000 $0.11
NSS12200WT1G DISTI #	ON Semiconductor	Small Signal Bipolar Transistor, 2A I(C), 12V V(BR RoHS: Compliant	47139	1 $0.13 25 $0.12 100 $0.12 500 $0.11 1000 $0.11

ON Semiconductor NSS12200WT1G

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