ON Semiconductor NSS1C200LT1G
- Part Number:
- NSS1C200LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845109-NSS1C200LT1G
- Description:
- TRANS PNP 100V 2A SOT-23
- ECAD Model:
-
- Datasheet:
- NSS1C200LT1G
ON Semiconductor NSS1C200LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSS1C200LT1G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1997
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation710mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Frequency120MHz
- Base Part NumberNSS1C200
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation710mW
- Power - Max490mW
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Gain Bandwidth Product120MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 50mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic250mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency120MHz
- Collector Emitter Saturation Voltage-40mV
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)140V
- Emitter Base Voltage (VEBO)7V
- Height1.01mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NSS1C200LT1G Overview
In this device, the DC current gain is 120 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -40mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 200mA, 2A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.120MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
NSS1C200LT1G Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of -40mV
the vce saturation(Max) is 250mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz
NSS1C200LT1G Applications
There are a lot of ON Semiconductor
NSS1C200LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 120 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -40mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 200mA, 2A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.120MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
NSS1C200LT1G Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of -40mV
the vce saturation(Max) is 250mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz
NSS1C200LT1G Applications
There are a lot of ON Semiconductor
NSS1C200LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
NSS1C200LT1G More Descriptions
NSS Series 100 V 2 A Surface Mount Low Vce PNP Transistor - SOT-23
100V 490mW 120@50mA,2V 2A PNP SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
Trans GP BJT PNP 100V 2A 3-Pin SOT-23 T/R - Tape and Reel
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
100V 490mW 120@50mA,2V 2A PNP SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
Trans GP BJT PNP 100V 2A 3-Pin SOT-23 T/R - Tape and Reel
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
The three parts on the right have similar specifications to NSS1C200LT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationTerminal PositionTerminal FormFrequencyBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationPower - MaxTransistor ApplicationHalogen FreeGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreehFE MinCase ConnectionTurn Off Time-Max (toff)Terminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionTurn On Time-Max (ton)View Compare
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NSS1C200LT1GACTIVE (Last Updated: 3 days ago)8 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)1997e3yesActive1 (Unlimited)3EAR99Other Transistors710mWDUALGULL WING120MHzNSS1C20031Single710mW490mWSWITCHINGHalogen Free120MHzPNPPNP100V2A120 @ 50mA 2V100nA ICBO250mV @ 200mA, 2A100V120MHz-40mV100V140V7V1.01mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free-------------- -
ACTIVE (Last Updated: 3 days ago)4 WeeksTinSurface MountSOT-723YES3SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Other Transistors625mWDUALFLAT-NSS1210031Single625mW-SWITCHINGHalogen Free-PNPPNP12V1A120 @ 500mA 2V100nA ICBO410mV @ 100mA, 1A12V--35mV12V12V5V550μm1.25mm850μmNo SVHCNoROHS3 CompliantLead Free80------------
-
ACTIVE (Last Updated: 4 days ago)8 WeeksTinSurface Mount3-WDFN Exposed PadYES3SILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Other Transistors1.1WDUAL-200MHzNSS1210031Single1.1W740mWSWITCHINGHalogen Free200MHzPNPPNP12V1A100 @ 500mA 2V100nA ICBO440mV @ 100mA, 1A12V200MHz-12V12V5V----NoROHS3 CompliantLead Free-COLLECTOR240ns----------
-
---Surface Mount8-SMD, Flat LeadYES-SILICON-55°C~150°C TJTape & Reel (TR)-e3yesObsolete1 (Unlimited)8---DUALC BEND--81--830mWSWITCHING--PNPPNP--250 @ 1A 2V100nA ICBO170mV @ 400mA, 4A-100MHz---------ROHS3 Compliant---590nsTIN26540R-PDSO-C8COMMERCIALSINGLE12V5A100MHz350ns
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