ON Semiconductor NSS12100M3T5G
- Part Number:
- NSS12100M3T5G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845532-NSS12100M3T5G
- Description:
- TRANS PNP 12V 1A SOT-723
- ECAD Model:
-
- Datasheet:
- NSS12100M3T5G
ON Semiconductor NSS12100M3T5G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSS12100M3T5G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseSOT-723
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation625mW
- Terminal PositionDUAL
- Terminal FormFLAT
- Base Part NumberNSS12100
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)12V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic410mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage12V
- Collector Emitter Saturation Voltage-35mV
- Max Breakdown Voltage12V
- Collector Base Voltage (VCBO)12V
- Emitter Base Voltage (VEBO)5V
- hFE Min80
- Height550μm
- Length1.25mm
- Width850μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NSS12100M3T5G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -35mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 410mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The breakdown input voltage is 12V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
NSS12100M3T5G Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of -35mV
the vce saturation(Max) is 410mV @ 100mA, 1A
the emitter base voltage is kept at 5V
NSS12100M3T5G Applications
There are a lot of ON Semiconductor
NSS12100M3T5G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -35mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 410mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The breakdown input voltage is 12V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
NSS12100M3T5G Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of -35mV
the vce saturation(Max) is 410mV @ 100mA, 1A
the emitter base voltage is kept at 5V
NSS12100M3T5G Applications
There are a lot of ON Semiconductor
NSS12100M3T5G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
NSS12100M3T5G More Descriptions
ON Semi NSS12100M3T5G PNP Bipolar Transistor, 3 A, 12 V, 3-Pin SOT-723 | ON Semiconductor NSS12100M3T5G
Small Signal Bipolar Transistor, 0.001A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 12V 1A 625mW Automotive 3-Pin SOT-723 T/R
Low VCE(sat) Transistor, PNP, 12 V, 1.0 A
Bipolar Transistor, Pnp, -12V; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:12V; Dc Collector Current:3A; Power Dissipation Pd:480Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:- Rohs Compliant: Yes |Onsemi NSS12100M3T5G
TRANSISTOR, PNP, -12V, -1A, SOT-723; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -12V; Transition Frequency ft: -; Power Dissipation Pd: 625mW; DC Collector Current: -1A; DC Current Gain hFE: 80hFE; Transistor Case Style: SOT-723; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Small Signal Bipolar Transistor, 0.001A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 12V 1A 625mW Automotive 3-Pin SOT-723 T/R
Low VCE(sat) Transistor, PNP, 12 V, 1.0 A
Bipolar Transistor, Pnp, -12V; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:12V; Dc Collector Current:3A; Power Dissipation Pd:480Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:- Rohs Compliant: Yes |Onsemi NSS12100M3T5G
TRANSISTOR, PNP, -12V, -1A, SOT-723; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -12V; Transition Frequency ft: -; Power Dissipation Pd: 625mW; DC Collector Current: -1A; DC Current Gain hFE: 80hFE; Transistor Case Style: SOT-723; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to NSS12100M3T5G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationTerminal PositionTerminal FormBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationHalogen FreePolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeFrequencyCase ConnectionPower - MaxGain Bandwidth ProductTransition FrequencyTurn Off Time-Max (toff)Terminal FinishCurrent - Collector (Ic) (Max)Voltage - Rated DCPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)View Compare
-
NSS12100M3T5GACTIVE (Last Updated: 3 days ago)4 WeeksTinSurface MountSOT-723YES3SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Other Transistors625mWDUALFLATNSS1210031Single625mWSWITCHINGHalogen FreePNPPNP12V1A120 @ 500mA 2V100nA ICBO410mV @ 100mA, 1A12V-35mV12V12V5V80550μm1.25mm850μmNo SVHCNoROHS3 CompliantLead Free------------- -
ACTIVE (Last Updated: 4 days ago)8 WeeksTinSurface Mount3-WDFN Exposed PadYES3SILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Other Transistors1.1WDUAL-NSS1210031Single1.1WSWITCHINGHalogen FreePNPPNP12V1A100 @ 500mA 2V100nA ICBO440mV @ 100mA, 1A12V-12V12V5V-----NoROHS3 CompliantLead Free200MHzCOLLECTOR740mW200MHz200MHz240ns------
-
ACTIVE (Last Updated: 2 days ago)4 Weeks-Surface MountTO-261-4, TO-261AAYES4SILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)4EAR99-2WDUALGULL WINGNSS1C20041Single-SWITCHINGHalogen FreePNPPNP100V3A120 @ 500mA 2V100nA ICBO220mV @ 200mA, 2A100V--140V7V-----NoROHS3 CompliantLead Free-COLLECTOR800mW120MHz120MHz-Tin (Sn)2A----
-
ACTIVE (Last Updated: 6 days ago)2 Weeks-Surface Mount6-TSSOP, SC-88, SOT-363YES6SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)6EAR99Other Transistors450mWDUALGULL WINGNSS1220061Single650mWSWITCHINGHalogen FreePNPPNP12V2A100 @ 800mA 1.5 V100nA290mV @ 20mA, 1A12V-170mV12V12V-5V100----NoROHS3 CompliantLead Free100MHz-450mW100MHz100MHz-Tin (Sn)--12V260-2A40
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
04 January 2024
ULN2003ADR: A Powerful Chip that Drives High Current Loads
Ⅰ. ULN2003ADR descriptionⅡ. Symbol, footprint and pin configuration of ULN2003ADRⅢ. Specifications of ULN2003ADRⅣ. What are the application fields of ULN2003ADR?Ⅴ. Simplified block diagram of ULN2003ADRⅥ. How to correctly... -
04 January 2024
TPS5430DDAR Converter Replacements, Characteristics, Applications and Development
Ⅰ. What is TPS5430DDAR?Ⅱ. Characteristics of TPS5430DDARⅢ. Specifications of TPS5430DDARⅣ. Market trend of TPS5430DDARⅤ. Pin configuration and functions of TPS5430DDARⅥ. Typical applications of TPS5430DDARⅦ. Development of TPS5430DDARTPS5430DDAR is... -
05 January 2024
N76E003AT20 Microcontroller Manufacturer, Specifications, Features and Package
Ⅰ. Introduction to N76E003AT20Ⅱ. N76E003AT20 manufacturerⅢ. Specifications of N76E003AT20Ⅳ. Features of N76E003AT20Ⅴ. Peripheral equipment and functions of N76E003AT20Ⅵ. Programming and burning of N76E003AT20Ⅶ. Package of N76E003AT20Ⅷ. What are... -
05 January 2024
TXS0108ERGYR Working Principle, Functions, Applications and Other Details
Ⅰ. What is a level translator?Ⅱ. Overview of TXS0108ERGYRⅢ. Working principle and functional block diagram of TXS0108ERGYRⅣ. Technical parameters of TXS0108ERGYRⅤ. Absolute maximum ratings of TXS0108ERGYRⅥ. Functions of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.