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NSS1C200MZ4T3G

ON Semiconductor NSS1C200MZ4T3G

Part Number:
NSS1C200MZ4T3G
Manufacturer:
ON Semiconductor
Ventron No:
2467116-NSS1C200MZ4T3G
Description:
TRANS PNP 100V 2A SOT-223
ECAD Model:
Datasheet:
NSS1C200MZ4T3G

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Specifications
ON Semiconductor NSS1C200MZ4T3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSS1C200MZ4T3G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Surface Mount
    YES
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Power Dissipation
    2W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Base Part Number
    NSS1C200
  • Pin Count
    4
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Power - Max
    800mW
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Gain Bandwidth Product
    120MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 500mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    220mV @ 200mA, 2A
  • Collector Emitter Breakdown Voltage
    100V
  • Current - Collector (Ic) (Max)
    2A
  • Transition Frequency
    120MHz
  • Collector Base Voltage (VCBO)
    140V
  • Emitter Base Voltage (VEBO)
    7V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NSS1C200MZ4T3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 500mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 220mV @ 200mA, 2A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A transition frequency of 120MHz is present in the part.Collector current can be as low as 3A volts at its maximum.

NSS1C200MZ4T3G Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 220mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz


NSS1C200MZ4T3G Applications
There are a lot of ON Semiconductor
NSS1C200MZ4T3G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
NSS1C200MZ4T3G More Descriptions
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA
Trans GP BJT PNP 100V 2A 2000mW Automotive 4-Pin(3 Tab) SOT-223 T/R
Low VCE(sat) Transistor, PNP, 100 V, 2.0 A
100V 2W 2A 120@500mA2V 120MHz PNP 220mV@2A200mA -55¡Í~ 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Product Comparison
The three parts on the right have similar specifications to NSS1C200MZ4T3G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Case Connection
    Power - Max
    Transistor Application
    Halogen Free
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Current - Collector (Ic) (Max)
    Transition Frequency
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Subcategory
    Frequency
    Power Dissipation
    Max Breakdown Voltage
    Turn Off Time-Max (toff)
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Voltage - Collector Emitter Breakdown (Max)
    Frequency - Transition
    Turn On Time-Max (ton)
    Voltage - Rated DC
    Current Rating
    Collector Emitter Saturation Voltage
    hFE Min
    View Compare
  • NSS1C200MZ4T3G
    NSS1C200MZ4T3G
    ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    4 Weeks
    Surface Mount
    TO-261-4, TO-261AA
    YES
    4
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    4
    EAR99
    Tin (Sn)
    2W
    DUAL
    GULL WING
    NSS1C200
    4
    1
    Single
    COLLECTOR
    800mW
    SWITCHING
    Halogen Free
    120MHz
    PNP
    PNP
    100V
    3A
    120 @ 500mA 2V
    100nA ICBO
    220mV @ 200mA, 2A
    100V
    2A
    120MHz
    140V
    7V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NSS12100UW3TCG
    NSS12100UW3TCG
    ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Surface Mount
    3-WDFN Exposed Pad
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    1.1W
    DUAL
    -
    NSS12100
    3
    1
    Single
    COLLECTOR
    740mW
    SWITCHING
    Halogen Free
    200MHz
    PNP
    PNP
    12V
    1A
    100 @ 500mA 2V
    100nA ICBO
    440mV @ 100mA, 1A
    12V
    -
    200MHz
    12V
    5V
    No
    ROHS3 Compliant
    Lead Free
    Tin
    Other Transistors
    200MHz
    1.1W
    12V
    240ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NSS1C200MZ4T3G vs NSS12100UW3TCG
  • NSS12600CF8T1G
    NSS12600CF8T1G
    ON Semiconductor
    -
    -
    Surface Mount
    8-SMD, Flat Lead
    YES
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    TIN
    -
    DUAL
    C BEND
    -
    8
    1
    -
    -
    830mW
    SWITCHING
    -
    -
    PNP
    PNP
    -
    -
    250 @ 1A 2V
    100nA ICBO
    170mV @ 400mA, 4A
    -
    5A
    100MHz
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    590ns
    265
    40
    R-PDSO-C8
    COMMERCIAL
    SINGLE
    12V
    100MHz
    350ns
    -
    -
    -
    -
    NSS1C200MZ4T3G vs NSS12600CF8T1G
  • NSS12200WT1G
    NSS12200WT1G
    ON Semiconductor
    ACTIVE (Last Updated: 6 days ago)
    2 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    450mW
    DUAL
    GULL WING
    NSS12200
    6
    1
    Single
    -
    450mW
    SWITCHING
    Halogen Free
    100MHz
    PNP
    PNP
    12V
    2A
    100 @ 800mA 1.5 V
    100nA
    290mV @ 20mA, 1A
    12V
    -
    100MHz
    12V
    -5V
    No
    ROHS3 Compliant
    Lead Free
    -
    Other Transistors
    100MHz
    650mW
    12V
    -
    260
    40
    -
    -
    -
    -
    -
    -
    -12V
    -2A
    -170mV
    100
    NSS1C200MZ4T3G vs NSS12200WT1G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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