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NSS12501UW3T2G

ON Semiconductor NSS12501UW3T2G

Part Number:
NSS12501UW3T2G
Manufacturer:
ON Semiconductor
Ventron No:
2846337-NSS12501UW3T2G
Description:
TRANS NPN 12V 5A 3-WDFN
ECAD Model:
Datasheet:
NSS12501UW3T2G

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Specifications
ON Semiconductor NSS12501UW3T2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSS12501UW3T2G.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    2 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    3-WDFN Exposed Pad
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1.5W
  • Terminal Position
    DUAL
  • Frequency
    150MHz
  • Base Part Number
    NSS12501
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.5W
  • Case Connection
    COLLECTOR
  • Power - Max
    875mW
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Gain Bandwidth Product
    150MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    12V
  • Max Collector Current
    5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2A 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    120mV @ 400mA, 4A
  • Collector Emitter Breakdown Voltage
    12V
  • Transition Frequency
    150MHz
  • Collector Emitter Saturation Voltage
    120mV
  • Max Breakdown Voltage
    12V
  • Collector Base Voltage (VCBO)
    12V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    200
  • Turn Off Time-Max (toff)
    420ns
  • Height
    750μm
  • Length
    2mm
  • Width
    2mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NSS12501UW3T2G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2A 2V.With a collector emitter saturation voltage of 120mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 120mV @ 400mA, 4A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 12V volts that it can take.Collector current can be as low as 5A volts at its maximum.

NSS12501UW3T2G Features
the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 120mV @ 400mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz


NSS12501UW3T2G Applications
There are a lot of ON Semiconductor
NSS12501UW3T2G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
NSS12501UW3T2G More Descriptions
Small Signal Bipolar Transistor, 5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 12V 5A 1500mW Automotive 3-Pin WDFN EP T/R
NSS Series 12 V 5 A Surface Mount Low Vce NPN Transistor - DFN-3W
ON Semi NSS12501UW3T2G NPN Bipolar Transistor, 5 A, 12 V, 3-Pin WDFN | ON Semiconductor NSS12501UW3T2G
Low VCE(sat) Transistor, NPN, 12 V, 5.0 A
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Product Comparison
The three parts on the right have similar specifications to NSS12501UW3T2G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Position
    Frequency
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Power - Max
    Transistor Application
    Halogen Free
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Turn Off Time-Max (toff)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Weight
    Terminal Form
    JESD-30 Code
    Continuous Collector Current
    Contact Plating
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Configuration
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Turn On Time-Max (ton)
    View Compare
  • NSS12501UW3T2G
    NSS12501UW3T2G
    ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    2 Weeks
    Surface Mount
    3-WDFN Exposed Pad
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    1.5W
    DUAL
    150MHz
    NSS12501
    3
    1
    Single
    1.5W
    COLLECTOR
    875mW
    SWITCHING
    Halogen Free
    150MHz
    NPN
    NPN
    12V
    5A
    200 @ 2A 2V
    100nA ICBO
    120mV @ 400mA, 4A
    12V
    150MHz
    120mV
    12V
    12V
    6V
    200
    420ns
    750μm
    2mm
    2mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NSS1C301ET4G
    NSS1C301ET4G
    ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    8 Weeks
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    2016
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    Other Transistors
    2.1W
    -
    -
    -
    3
    1
    Single
    -
    COLLECTOR
    -
    SWITCHING
    Halogen Free
    120MHz
    NPN
    NPN
    100V
    3A
    120 @ 1A 2V
    100nA ICBO
    250mV @ 300mA, 3A
    100V
    120MHz
    115mV
    100V
    140V
    6V
    120
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    260.39037mg
    GULL WING
    R-PSSO-G2
    3A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NSS12501UW3T2G vs NSS1C301ET4G
  • NSS12100UW3TCG
    NSS12100UW3TCG
    ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Surface Mount
    3-WDFN Exposed Pad
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Other Transistors
    1.1W
    DUAL
    200MHz
    NSS12100
    3
    1
    Single
    1.1W
    COLLECTOR
    740mW
    SWITCHING
    Halogen Free
    200MHz
    PNP
    PNP
    12V
    1A
    100 @ 500mA 2V
    100nA ICBO
    440mV @ 100mA, 1A
    12V
    200MHz
    -
    12V
    12V
    5V
    -
    240ns
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    Tin
    -
    -
    -
    -
    -
    -
    -
    -
    NSS12501UW3T2G vs NSS12100UW3TCG
  • NSS12600CF8T1G
    NSS12600CF8T1G
    ON Semiconductor
    -
    -
    Surface Mount
    8-SMD, Flat Lead
    YES
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    TIN
    -
    -
    DUAL
    -
    -
    8
    1
    -
    -
    -
    830mW
    SWITCHING
    -
    -
    PNP
    PNP
    -
    -
    250 @ 1A 2V
    100nA ICBO
    170mV @ 400mA, 4A
    -
    100MHz
    -
    -
    -
    -
    -
    590ns
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    C BEND
    R-PDSO-C8
    -
    -
    265
    40
    COMMERCIAL
    SINGLE
    12V
    5A
    100MHz
    350ns
    NSS12501UW3T2G vs NSS12600CF8T1G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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