IXYS IXGX64N60B3D1
- Part Number:
- IXGX64N60B3D1
- Manufacturer:
- IXYS
- Ventron No:
- 3587299-IXGX64N60B3D1
- Description:
- IGBT 600V 460W PLUS247
- Datasheet:
- IXGX64N60B3D1
IXYS IXGX64N60B3D1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGX64N60B3D1.
- Factory Lead Time30 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Transistor Element MaterialSILICON
- PackagingTube
- SeriesGenX3™
- Published2012
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureLOW CONDUCTION LOSS
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation460W
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSIP-T3
- Qualification StatusNot Qualified
- Operating Temperature (Max)150°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.8V
- Max Collector Current64A
- Reverse Recovery Time35ns
- Collector Emitter Breakdown Voltage600V
- Turn On Time64 ns
- Test Condition480V, 50A, 3 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 50A
- Turn Off Time-Nom (toff)326 ns
- IGBT TypePT
- Gate Charge168nC
- Current - Collector Pulsed (Icm)400A
- Td (on/off) @ 25°C25ns/138ns
- Switching Energy1.5mJ (on), 1mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5V
- RoHS StatusROHS3 Compliant
IXGX64N60B3D1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGX64N60B3D1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGX64N60B3D1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGX64N60B3D1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGX64N60B3D1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGX64N60B3D1 More Descriptions
IGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode
IGBT 600V 460W PLUS247
French Electronic Distributor since 1988
Contact for details
IGBT 600V 460W PLUS247
French Electronic Distributor since 1988
Contact for details
The three parts on the right have similar specifications to IXGX64N60B3D1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialPackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureSubcategoryMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationCase ConnectionInput TypeTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRoHS StatusOperating TemperaturePower - MaxVoltage - Collector Emitter Breakdown (Max)Number of PinsReach Compliance CodeBase Part NumberElement ConfigurationPower DissipationCollector Emitter Saturation VoltageLead FreeInput CapacitanceView Compare
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IXGX64N60B3D130 WeeksThrough HoleThrough HoleTO-247-3SILICONTubeGenX3™2012e1yesActive1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)LOW CONDUCTION LOSSInsulated Gate BIP Transistors460WSINGLENOT SPECIFIEDNOT SPECIFIED3R-PSIP-T3Not Qualified150°C1SINGLE WITH BUILT-IN DIODECOLLECTORStandardPOWER CONTROLN-CHANNEL1.8V64A35ns600V64 ns480V, 50A, 3 Ω, 15V1.8V @ 15V, 50A326 nsPT168nC400A25ns/138ns1.5mJ (on), 1mJ (off)20V5VROHS3 Compliant------------
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8 WeeksThrough HoleThrough HoleTO-247-3SILICONTubeGenX3™2012e1yesActive1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)LOW CONDUCTION LOSSInsulated Gate BIP Transistors460WSINGLENOT SPECIFIEDNOT SPECIFIED3R-PSIP-T3Not Qualified-1SINGLE WITH BUILT-IN DIODECOLLECTORStandardPOWER CONTROLN-CHANNEL4.2V95A75 ns1.2kV60 ns600V, 40A, 2 Ω, 15V4.2V @ 15V, 40A485 nsPT196nC240A31ns/123ns2mJ (on), 630μJ (off)20V5VROHS3 Compliant-55°C~150°C TJ460W1200V--------
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30 WeeksThrough HoleThrough HoleTO-247-3SILICONTubeGenX3™2009e1yesActive1 (Unlimited)3TIN SILVER COPPER-Insulated Gate BIP Transistors780W-NOT SPECIFIEDNOT SPECIFIED3-Not Qualified-1-COLLECTORStandardPOWER CONTROLN-CHANNEL1.8V280A-600V123 ns480V, 100A, 2 Ω, 15V1.8V @ 15V, 100A520 nsPT465nC600A40ns/227ns2.9mJ (on), 3.5mJ (off)20V5VROHS3 Compliant-55°C~150°C TJ--3unknownIXG*120N60Single780W1.5VLead Free-
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8 WeeksThrough HoleThrough HoleTO-247-3SILICONTubeGenX3™2012e1yesActive1 (Unlimited)3TIN SILVER COPPERLOW CONDUCTION LOSSInsulated Gate BIP Transistors540WSINGLENOT SPECIFIEDNOT SPECIFIED3-Not Qualified-1SINGLE WITH BUILT-IN DIODECOLLECTORStandardPOWER CONTROLN-CHANNEL600V75A140 ns600V63 ns480V, 50A, 3 Ω, 15V1.35V @ 15V, 60A885 nsPT230nC400A31ns/320ns1.4mJ (on), 3.5mJ (off)20V5VROHS3 Compliant-55°C~150°C TJ--3unknownIXG*72N60-540W1.35V-6.6nF
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